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Complementary studies of atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements are carried out in order to unravel the influence of C-doping of GaN on the vertical leakage current of AlN/AlGaN/GaN:C heterostructures. A systematic increment of the vertical blocking voltage at a given current density is observed in the structures, when moving from the nominally undoped conditions—corresponding to a residual C-background of ~1017cm-3—to a C-content of ~1019cm-3 in the GaN layer. The value of the vertical blocking voltage saturates for C concentrations higher than ~1019cm-3. Atom probe tomography confirms the homogeneity of the GaN:C layers, demonstrating that there is no clustering at C-concentrations as high as 1020cm-3. It is inferred that the vertical blocking voltage saturation is not likely to be related to C-clustering. [ABSTRACT FROM AUTHOR]

The early stages of InGaN/GaN quantum well growth for In-reduced conditions have been investigated for varying thickness and composition of the wells. The structures were studied by monochromated scanning transmission electron microscopy-valence electron energy loss spectroscopy spectrum imaging at high spatial resolution. It is found that beyond a critical well thickness and composition, quantum dots (width >20 nm) are formed inside the well. These are buried by compositionally graded InGaN, which is formed as GaN is grown while residual In is incorporated into the growing structure. It is proposed that these dots act as carrier localization centers inside the quantum wells. [ABSTRACT FROM AUTHOR]

Capacitance-voltage [C(V)] measurements of metal-insulator-semiconductor-heterostructure capacitors are used to investigate the interface between silicon nitride passivation and AlGaN/AlN/GaN heterostructure material. AlGaN/AlN/GaN samples having different silicon nitride passivating layers, deposited using three different deposition techniques, are evaluated. Different interface state distributions result in large differences in the C(V) characteristics. A method to extract fixed charge as well as traps from the C(V) characteristics is presented. Rough estimates of the emission time constants of the traps can be extracted by careful analysis of the C(V) characteristics. The fixed charge is positive for all samples, with a density varying between 1.3×1012 and 7.1×1012 cm-2. For the traps, the peak density of interface states is varying between 16×1012 and 31×1012 cm-2 eV-1 for the three samples. It is concluded that, of the deposition methods investigated in this report, the low pressure chemical vapor deposited silicon nitride passivation shows the most promising results with regards to low densities of interface states. [ABSTRACT FROM AUTHOR]

AlGaN/AlN/GaN high electron mobility transistor heterostructures grown by metal-organic chemical vapor deposition have been studied by temperature dependent time-resolved photoluminescence. The AlGaN-related emission is found to be sensitive to the excitation power and to the built-in internal electric field. In addition, this emission shows a shift to higher energy with the reduction in the excitation density, which is rather unusual. Using a self-consistent calculation of the band potential profile, we suggest a recombination mechanism for the AlGaN-related emission involving electrons confined in the triangular AlGaN quantum well and holes weakly localized due to potential fluctuations. [ABSTRACT FROM AUTHOR]

The decoupling of epitaxial factors influencing the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage ( [ABSTRACT FROM AUTHOR]

Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, and steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentrations is investigated. Time-resolved PL indicating the CN ON complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of ~0.8 eV for all samples, pointing to a common dominating trapping process and that the growth parameters affect solely the density of trap centres. It is inferred that the trapping process is likely to be directly related to C based defects. [ABSTRACT FROM AUTHOR]

Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, and steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentrations is investigated. Time-resolved PL indicating the CN ON complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of ~0.8 eV for all samples, pointing to a common dominating trapping process and that the growth parameters affect solely the density of trap centres. It is inferred that the trapping process is likely to be directly related to C based defects. [ABSTRACT FROM AUTHOR]

Hidradenitis suppurativa (acne inverse) ( HS) is a chronic skin disease primarily affecting hair follicles. The aetiology of HS is unknown, but infection is believed to play some role. This retrospective study investigated the microbial colonization directly in skin appendices in HS skin samples. Archival samples from 27 patients with HS were screened by immunofluorescence labelling with monoclonal and polyclonal antibodies against Gram-positive bacteria, Propionibacterium acnes and Propionibacterium granulosum. Fluorescence in situ hybridization was used for further species identification of Staphylococcus spp. Overall, 17 patients (63%) were found positive for bacterial colonization. Of these, 15 showed colonization in hair follicles and/or sinus tracts. The most commonly identified bacteria were DAPI labelled coccoids that were seen in 71% of the positive patients in the form of biofilms and microcolonies. P. acnes was found as biofilms in hair follicles of two patients. Staphylococcus aureus and coagulase-negative staphylococci were not detected in any sample. The results of this study indicate a common bacterial presence in HS skin lesions. Bacterial biofilms are not uncommon and their pathogenic role needs further evaluation. [ABSTRACT FROM AUTHOR]

The tutor is important for student learning in the PBL group. The students expect the tutor to monitor and steer the group process and to support the learning process, helping students to become aware of their own learning. This study aimed at investigating the PBL tutor's role. Five PBL tutors at the Speech/Language Pathology program were interviewed regarding their view of the tutors' role and what support they need. The analysis of the transcribed interviews focused on finding patterns and variation regarding tutor-activity at different stages in the PBL work and in their views of their progress as tutors. The results indicate that being a tutor is a balancing act and that the tutor need continuous support and input from different sources. Tutors should be encouraged to reflect on their own reactions and interventions and to be explicit and confident in their thoughts about PBL. [ABSTRACT FROM AUTHOR]

Folliculitis is a common inflammatory skin syndrome. Several microbial organisms have been put forward as causative agents, but few studies visualized microbes directly in inflamed hair follicles. This retrospective study investigated bacterial and fungal colonization of inflamed hair follicles in patients with clinically diagnosed non-infectious folliculitis. Skin biopsies from 39 folliculitis patients and 27 controls were screened by fluorescence in situ hybridization ( FISH) using broad-range bacterial and fungal probes and by immunofluorescence microscopy using a monoclonal antibody towards Gram-positive bacteria. Specific monoclonal and polyclonal antibodies towards Staphylococcus spp. and Propionibacterium acnes were applied for further species identification. Inflamed follicles were associated with bacterial colonization in 10 samples (26%) and fungal colonization in three samples (8%). Staphylococcus spp. were observed in inflamed follicles in seven samples (18%). Two samples were positive for P. acnes, which were identified as either type II or type IB/type III. Both Staphylococcus spp. and P. acnes were seen in macrocolonies/biofilm structures. In conclusion, one-third of patients with clinically diagnosed, non-infectious folliculitis exhibited microbial colonization with predominance of Staphylococcus spp. [ABSTRACT FROM AUTHOR]

Background/purpose An early diagnosis of cutaneous malignant melanoma is of high importance for good prognosis. An objective, non-invasive instrument could improve the diagnostic accuracy of melanoma and decrease unnecessary biopsies. The aim of this study was to investigate the use of Near-infrared and skin impedance spectroscopy in combination as a tool to distinguish between malignant and benign skin tumours. Methods Near-infrared and skin impedance spectra were collected in vivo on 50 naevi or suspect melanomas prior to excision. Received data were analysed using multivariate techniques and the results were compared to histopathology analyses of the tumours. A total of 12 cutaneous malignant melanomas, 19 dysplastic naevi and 19 benign naevi were included in the study. Results The observed sensitivity and specificity of the proposed method were 83% and 95%, respectively, for malignant melanoma. Conclusion The results indicate that the combination of near-infrared and skin impedance spectroscopy is a promising tool for non-invasive diagnosis of suspect cutaneous malignant melanomas. [ABSTRACT FROM AUTHOR]

Rosacea is a common skin disease in adults affecting mainly the facial skin. Although inflammation appears to play a pathogenic role in rosacea, initiating factors are largely unknown. Microbial involvement in the development of rosacea has been suggested previously. We aimed to visualize Propionibacterium acnes in the skin compartments of rosacea patients. Facial skin biopsies from 82 rosacea patients and 25 controls were stained with a P. acnes-specific monoclonal antibody ( QUBPa3). Seven of 82 patients (8.5%) tested positive for P. acnes which was present either as a biofilm (57% of positive) or a microcolony (43%) in colonized patients. Our results suggest that P. acnes does not play a major role in the pathogenesis of rosacea. [ABSTRACT FROM AUTHOR]

Background Acne vulgaris is a disorder of the sebaceous follicles. Propionibacterium acnes can be involved in inflammatory acne. Objectives This case-control study aimed at investigating the occurrence and localization of P. acnes in facial biopsies in acne and to characterize the P. acnes phylotype in skin compartments. Methods Specific monoclonal and polyclonal antibodies were applied to skin biopsies of 38 patients with acne and matching controls to localize and characterize P. acnes and to determine expression of co-haemolysin CAMP factor, a putative virulence determinant. Results Follicular P. acnes was demonstrated in 18 (47%) samples from patients with acne and eight (21%) control samples [odds ratio (OR) 3·37, 95% confidence interval (CI) 1·23-9·23; P = 0·017]. In 14 (37%) samples from patients with acne, P. acnes was visualized in large macrocolonies/biofilms in sebaceous follicles compared with only five (13%) control samples (OR 3·85, 95% CI 1·22-12·14; P = 0·021). Macrocolonies/biofilms consisting of mixed P. acnes phylotypes expressing CAMP1 were detected in both case and control samples. Only four samples tested positive for the presence of Staphylococcus spp. and fungi were not observed. Conclusions We have for the first time visualized different P. acnes phylotypes in macrocolonies/biofilms in sebaceous follicles of skin biopsies. Our results support the hypothesis that P. acnes can play a role in the pathogenesis of acne as acne samples showed a higher prevalence of follicular P. acnes colonization, both in terms of follicles containing P. acnes and the greater numbers of bacteria in macrocolonies/biofilms than in control samples. [ABSTRACT FROM AUTHOR]

Currently, up to 50% of the channel temperature in AIGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal- organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in ∼10% reduction of the operating temperature of AIGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AIGaN/ GaN devices. [ABSTRACT FROM AUTHOR]

Highlights the results of a study on the effectiveness of surgical lumbar sympathectomy in the treatment of arterial disease of the legs. Effect of chemical sympathectomy in chronic obliterative arterial disease in patients without diabetes; Postoperative complications; Recommendation on chemical sympathectomy.

The article looks at a study related to the folliculitis decalvans (FD), a chronic primary disease, with the isolation of Staphylococcus aureus from primary lesions in untreated FD patients. Topics discussed include bacterial colonization of hair samples of FD patients, involvement of Propionibacterium acnes in the pathogenesis of FD and deeper parts of the hair follicle that was organized in biofilms.

A letter to the editor is presented in response to an article on genital graft-versus-host disease in a male after allogeneic stem cell transplantation.

The emission of a charged exciton in an InGaN quantum dot (QD) on top of a GaN pyramid is identified experimentally. The intensity of the charged exciton exhibits the expected competition with that of the single exciton, as observed in temperature-dependent micro-photoluminescence measurements, performed with different excitation energies. The non-zero charge state of this complex is further supported by time resolved micro-photoluminescence measurements, which excludes neutral alternatives of biexciton. The potential fluctuations in the vicinity of the QD that localizes the charge carriers are proposed to be responsible for the unequal supply of electrons and holes into the QD. [ABSTRACT FROM AUTHOR]

Raman scattering of individual aluminum nitride (AlN) nanowires is investigated systematically. The axial direction of single nanowire can be rapidly verified by polarized Raman scattering. The angular dependencies of E2(high) mode show strongly anisotropic behavior in smaller nanowires, which results from optical antenna effect. Raman enhancement (RE) per unit volume of E2(high) increases with decreasing diameter of nanowires. Compared to the thin film, ∼200-fold increase of RE is observed in AlN nanowires having diameter less than 50 nm, which is far beyond the quantum confinement regime. Such a large RE can be attributed to the effects of resonant cavity and stimulated Raman scattering. [ABSTRACT FROM AUTHOR]

Growing InGaN quantum dots (QDs) at the apex of hexagonal GaN pyramids is an elegant approach to achieve a deterministic positioning of QDs. Despite similar synthesis procedures by metal organic chemical vapor deposition, the optical properties of the QDs reported in the literature vary drastically. The QDs tend to exhibit either narrow or broad emission lines in the micro-photoluminescence spectra. By coupled microstructural and optical investigations, the QDs giving rise to narrow emission lines were concluded to nucleate in association with a (0001) facet at the apex of the GaN pyramid. [ABSTRACT FROM AUTHOR]