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From an industry perspective, the past decade has been a whirlwind of innovation in automotive light detection and ranging (LiDAR). Numerous laser technologies and system solutions have been fiercely competing for market share. However, recent trends suggest a growing convergence on vertical-cavity surface-emitting laser (VCSEL) and antireflective VCSEL (AR-VCSEL) based solutions. This commentary, rooted in the practical realities of the industry, examines the historical trajectory of industrial laser technology for commercial automotive LiDAR. It specifically focuses on the recent applications of VCSEL/AR-VCSEL technologies and their future prospects. Liang et al. present an industrial perspective on the evolving landscape of laser technology used in advanced LiDAR systems. The authors discuss recent trends, practical considerations within the industry, current challenges, and potential solutions, explicitly focusing on VCSEL/AR-VCSEL-based technologies and their strong potential for commercial LiDAR applications. [ABSTRACT FROM AUTHOR]

We demonstrate significantly enhanced performance of 2.1 μm InGaAsSb quantum well lasers using Sb as a surfactant. The lasers are grown on an InP substrate by metal-organic vapor-phase epitaxy. Following the introduction of Sb, a double-channel waveguide laser, with uncoated facets, shows a remarkably increased continuous-wave output power of 330 mW, compared with 160 mW for a Sb-free InGaAs quantum well laser, measured at 10 °C. Moreover, the introduction of Sb improves the temperature performance of the device and doubles its wall-plug efficiency. In addition, the active region material and interface quality are investigated by transmission electron microscopy, which help to elucidate the basic physical mechanism of the Sb surfactant effect. [ABSTRACT FROM AUTHOR]

As an important candidate for novel infrared semiconductor lasers, the optical properties of GaAsSb-based multiple quantum wells (MQWs) are crucial. The temperature- and excitation power-dependent photoluminescence (PL) spectra of the GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs, which were grown by molecular beam epitaxy, were investigated and are detailed in this work. Two competitive peaks were observed from 40 K to 90 K. The peak located at the low-energy shoulder was confirmed to be localized states emission (LE) and the high-energy side peak was confirmed to be free-carrier emission by its temperature-dependent emission peak position. It is observed that the LE peak exhibited a blueshift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. Our studies have great significance for application of GaAsSb-based MQWs in infrared semiconductor lasers. [ABSTRACT FROM AUTHOR]

No abstract is available for this article. [ABSTRACT FROM AUTHOR]