1. Estimation of the interface states density of a Si/C[sub 60] heterojunction by frequency-dependent capacitance–voltage characteristics.
- Author
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Kita, K., Ihara, M., Sakaki, K., and Yamada, K.
- Subjects
MODULATION-doped field-effect transistors ,SILICON crystals ,ELECTRIC capacity - Abstract
Capacitance-voltage (C-V) characteristics of a Si/C&sub60; heterojunction, i.e., a HF solution (7.3% HF+30% NH[sub 4]F) treated Si surface interfaced solid crystal of C&sub60; molecules, were measured while applying various ac frequencies. The entire C[sub 60] thin film and near-interface region of the Si wafer behaved as a depletion region, with the C – V curve showing two distinct regions: one above and one below a threshold bias voltage. Below the threshold, C –V characteristics were dependent on applied frequency, which suggests the presence of interface states that only affect capacitance at lower frequencies. This frequency dependence was analyzed by assuming a suitable equivalent circuit, and based on derived curve-fitting circuit parameters the interface states density was accordingly estimated to have a value as low as ∼ 10[sup 11]/cm² eV. Such a small density indicates that only a few lattice defects occur within the interface of the HF-treated Si surface and C&sub60; crystal. Although no frequency dependence was observed above the threshold, the C – V characteristics were found to be dependent on the width of the depletion region in Si. [ABSTRACT FROM AUTHOR]
- Published
- 1997
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