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1. Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures.

2. Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs.

3. Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs.

5. Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs.

6. Operation of SiGe HBTs Down to 70 mK.

8. A Physics-Based Circuit Aging Model for Mixed-Mode Degradation in SiGe HBTs.

9. The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits.

10. A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs.

11. Bias- and Temperature-Dependent Accumulated Stress Modeling of Mixed-Mode Damage in SiGe HBTs.

12. Large-Signal Reliability Analysis of SiGe HBT Cascode Driver Amplifiers.

13. A 0.8 THz fMAX SiGe HBT Operating at 4.3 K.

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