1. A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing.
- Author
-
Mei-Xin Feng, Qian Sun, Jian-Ping Liu, Zeng-Cheng Li, Yu Zhou, Hong-Wei Gao, Shu-Ming Zhang, and Hui Yang
- Subjects
SEMICONDUCTOR lasers ,STIMULATED emission ,OPTICAL properties of gallium nitride ,ELECTRON-hole recombination ,RECOMBINATION in semiconductors - Abstract
Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current density corresponding to the peak efficiency of GaN-based LDs before lasing, J
max , is nearly 40 A/cm2 , which is much lower than that reported by other studies. The reported Jmax , measured from the cavity facet side is modulated by the absorption of quantum wells, which shifts the Jmax to a higher value. In addition, the currents due to various recombinations are calculated. It is found that Auger recombination affects the threshold current greatly, but it only plays a small role at high current injection levels. [ABSTRACT FROM AUTHOR]- Published
- 2017
- Full Text
- View/download PDF