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Recently, metal oxide semiconductors have attracted considerable interest in certain areas, such as displays. Applications of transparent metal oxide semiconductors in photosensors are also starting to develop owing to their high charge carrier concentration and mobility. By including a narrow bandgap material in the device, photoresponsivity can be improved, but it increases the number of fabrication steps. This paper suggests embedding an indium oxide thin film with graphene oxide (GO) photoactive particles in a single step from a mixed aqueous precursor solution by spin coating. The device performance was assessed as a function of the GO content. The device stability data showed that a higher GO content induced hole trapping under prolonged gate bias stress. Hole trapping at the In2O3/GO interface is important under illumination, where the trapping of the minor photogenerated carrier can improve the photocurrent via the photogating effect. The long-term trapping of holes in the n-type device also produces a persistent photocurrent, which makes the device respond to illumination like an artificial neuron. In addition to photodetection, the device applicability in binary logic circuits was also demonstrated via a load-type inverter. The phototransistor proposed in this study could achieve sensing, memory, and binary logic in the same device. [ABSTRACT FROM AUTHOR]

This paper examined the effects of no treatment versus plasma treatment, and femtosecond laser irradiation as pre-annealing processes on indium zinc oxide (IZO) films and annealing at high temperatures. The plasma pre-annealed multilayer stacked IZO TFTs showed better electrical properties with mobility enhancement from 2.45 to 7.81 cm2/Vs, but exhibited diminished on–off current ratio (Ion/Ioff). The IZO thin-film transistor (TFT) prepared with femtosecond laser pre-annealing with low pulse energy generation (power of 3 W at 700 nm wavelength) for 100 s has also exhibited significantly improved electrical performance, the saturation mobility increased to 4.91 cm2/Vs, the Ion/Ioff ratio was enhanced from 4.5 × 105 to 2.1 × 106, the threshold voltage improved from − 1.44 to − 0.25 V, and the subthreshold swing was reduced from 1.21 to 0.61 V/dec. In conclusion, IZO TFTs with improved performance can be prepared using a femtosecond laser pre-annealing process, which has great potential for fabricating low-cost, high-performance devices. [ABSTRACT FROM AUTHOR]

A high-performance indium oxide (In2O3)-based thin-film transistor (TFT) was prepared with aluminum oxide/fluorinated self-assembled monolayer (Al2O3/F-SAM) double-gate dielectric layer. The Al2O3/F-SAM double gate dielectric layer improved the performance of the In2O3-based TFT by reducing the device leakage current. In addition, devices with a double-gate dielectric layer show improved stability under negative bias stress testing compared to devices with a single gate dielectric layer (Al2O3), shifting a threshold voltage by only 0.4 V. These results suggest that the Al2O3/F-SAM double-layer gate dielectric layer can enhance the performance of In2O3-based TFTs. Furthermore, it can be used to improve the performance of other metal oxide-based devices by minimizing the leakage current at low operating voltages at low cost. [ABSTRACT FROM AUTHOR]

A method for radio frequency oxygen (O2) plasma-assisted treatment of indium zinc oxide (IZO) films with a multistacked architecture fabricated by a low-temperature (200 °C) solution process is investigated. We demonstrate that radio frequency O2 plasma-assisted posttreatment technology can improve the mobility and stability of IZO thin-film transistors (TFTs). The activity layers were formed by spin coating and subsequently thermally annealed at a low temperature of 200 °C, followed by O2-plasma posttreatment process, to form the O2 triggered multistacked architecture. The TFT devices plasma-treated for 3 min exhibit improved electrical characteristics, with a mobility of 7.09 ± 0.24 cm2/Vs, an ON OFF ratio of (1.21 ± 1.22) $\times 10^{{6}}$ , a threshold voltage of $-0.22\,\,\pm \,\,0.35$ V, and a subthreshold swing of 0.34 ± 0.02 V/dec. The improved results offered by the O2 plasma treatment led to a higher mobility and ON/ OFF ratio compared to sample device without this process. The successful fabrication of radio frequency O2 triggered multistacked architecture-based IZO TFTs showing the practical potential of high-performance low-temperature solution-processed preparation technology and radio frequency O2 plasma-assisted treatment for electrical device application. [ABSTRACT FROM AUTHOR]

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have attracted considerable attention for cutting-edge and next-generation electronics applications because of their high field-effect mobility, low leakage current, superior uniformity, and high transparency. On the other hand, maintaining stable electrical performance under the influence of various ambient and complex operating environments is a serious application problem. Hence, a fluoroacrylate-incorporated polytetrafluoroethylene (F–P) is proposed as a new material for passivation layers (PVLs) of a-IGZO TFTs. Solution process-based F–P PVLs were introduced to overcome the intrinsically brittle nature of inorganic materials and enhance the long-term stability of organic materials because of their excellent flexibility, hydrophobicity, and chemical stability. This also provides a simple and cheaper alternative for practical applications. The F–P PVLs with different concentrations exhibited appropriate improvements in stability and electrical performance. Of these, the 1.0 wt% F–P passivated IGZO TFTs showed improved performance in saturation mobility (μsat) from 6.23 ± 0.21 to 7.02 ± 0.38 cm−2 V−1 s−1, an on–off current ratio (Ion/Ioff) from (4.05 ± 0.84) × 105 to (3.75 ± 2.32) × 108, and a subthreshold swing (SS) from 1.79 ± 0.30 to 0.41 ± 0.04 V per decade compared to the pristine device without the F–P PVL. After the 15 day stability test under ambient conditions, μsat increased from 7.02 ± 0.38 to ∼8 cm2 V−1 s−1; Ion/Ioff increased from (3.75 ± 2.32) × 108 to ∼1010 and the SS values were maintained at a low level (≤0.6 V dec−1). The improvement was induced by lower surface energy and better hydrophobicity from F–P PVLs, which can effectively reduce the adsorption behavior of H2O and O2. With a lower oxygen-related interface trap density, the electrical performances were improved by a suitable concentration-based F–P PVL. In addition, the F–P PVL can provide a long-term guarantee of stability and reliability for a-IGZO TFTs, which will have potential applications for wearable devices and multi-environment electronics devices. [ABSTRACT FROM AUTHOR]

Indium zinc oxide thin-film transistors with a bottom gate structure were made by a channel layer multi-stack process on silicon substrate. Femtosecond laser post-annealing treatment was carried out to study the impact on the electrical properties and the stability of the device. The experimental results show that the electrical properties of the device are improved optimally when 100-s laser post-annealing treatment was carried out, and it had the best stability. The mobility was 5.23 cm2/Vs, the threshold voltage was − 0.26 V, the stable subthreshold swing was 0.81 V/dec, and the electron mobility of the device stayed above 3.82 cm2/Vs after it was exposed to air for 14 days. Figure a shows the transfer characteristic curve of the IZO TFTs obtained by measuring the drain current (Ids) a function of gate voltage (Vgs) swept from − 0 to 30 V, at a fixed drain voltage (Vds) of 30 V. Figure b shows the devices put in an atmospheric environment for 14 days and then detected their electrical properties. [ABSTRACT FROM AUTHOR]

C26H24N3O3SAg, monoclinic, P21/c (no. 14), a = 13.1936(9) Å, b = 11.0544(7) Å, c = 16.3653(9) Å, β = 99.214(6)°, V = 2356.0(3) Å3, Z = 4, Rgt(F) = 0.0495, wRref(F2) = 0.1080, T = 293(2) K. [ABSTRACT FROM AUTHOR]

C25H29Ag2N5O9S, monoclinic, P21/m (no. 11), a = 8.5437(16) Å, b = 17.852(4) Å, c = 9.3335(13) Å, β = 101.380(16)°, V = 1395.6(5) Å3, Z = 2, Rgt(F) = 0.0271, wRref(F2) = 0.0653, T = 293(2) K. [ABSTRACT FROM AUTHOR]

C7H8Ag2N3O4S, triclinic, P1 (no. 2), a = 7.3758(3) Å, b = 8.7361(4) Å, c = 9.2906(4) Å, α = 112.877(4)°, β = 90.054(4)°, γ = 102.568(4)°, V = 535.90(4) Å3, Z = 2, Rgt(F) = 0.0235, wRref(F2) = 0.0600, T = 293(2) K. [ABSTRACT FROM AUTHOR]

C12H18O8N4S2Ag2, monoclinic, P21/c (no. 14), a = 10.7841(10) Å, b = 8.0140(5) Å, c = 11.7220(11) Å, β = 117.278(11)°, V = 900.40(16) Å3, Z = 2, Rgt(F) = 0.0279, wRref(F2) = 0.0627, T = 293(2) K. [ABSTRACT FROM AUTHOR]