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Space-time adaptive processing (STAP) is used for multiple-input multiple-output (MIMO) radar systems that have improved the spatial resolution for clutter. The STAP algorithm has computed the clutter space by using the prolate spheroidal wave functions (PSWF) and the block-diagonal property of the jammer covariance matrix.

The engineering and tradeoffs for quality factor, capacitance tuning ratio, capacitance mismatch, and low-frequency noise for different varactor device structures, geometry sizes and operations for the advanced radio-frequency voltage-controlled oscillator (VCO) is presented.

The introduction of an adaptive beamformer that is robust against the direction-of-arrival (DOA) mismatch is discussed. Results suggest that the adaptive beamformer method possesses excellent signal-to-interference-plus-noise ratio performance and a complexity comparable to the standard minimum variance distortionless response (MVDR) beamformer.

The precoded vertical Bell labs layered space-time (V-BLAST) system is used in the case of frequency-selective multi-input multioutput (MIMO) channels. It is shown that the cyclic prefixing (CP)-based precoded V-BLAST system is good for the transceiver for MIMO frequency-selective channels when the channel information is available at the transmitter.

A study was conducted to identify the specific cysteine residues involved in the protein S-glutathiolation of complex I at both the 51 kDa and 75 kDa subunits of NQR with a combination of immunoblotting and mass spectrometry. The results implies that S-glutathiolation of the 75 kDa subunit might play a role in protecting the 4Fe-4S cluster of the 51 kDa subunit from redox modification when complex 1 is exposed to redox change in the GSH pool.

The structural and optical properties of single crystal [Zn.sub.1-x][Mg.sub.x]O nanorods (0

A study was conducted to examine gene expression in 125 surgical specimens of non-small-cell lung cancer (NSCLC) using microarrays and real-time reverse-transcriptase polymerase chain reaction in order to identify a gene signature that is correlated with the clinical outcome. The five-gene expression signature is closely associated with the clinical outcome in patients with surgically resected NSCLC which could be useful in stratifying patients according to risk in trials of adjuvant treatment of the disease.

A precompression quality-control (PCQC) algorithm is proposed that significantly reduces the computational power of the embedded block coding (EBC) and memory requirement to buffer embedded bit streams, by utilizing the randomness property and propagation property of the EBC. The proposed algorithm reduces the computational power end memory requirement to 20% and 10% at 0.8 bpp compared to the traditional postcompression rate-distortion optimization algorithm, and can be adopted into any JPEG 2000 system since it does not modify the coding flow of the EBC.

The influences of (NH (sub 4))(sub 2)S(sub x) treatment on an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) are studied. The studied devices exhibit better temperature dependent dc and microwave characteristics.

The N,N'-type ligand 2,5-bis(4'-(imidazol-i-yl)benzyl)-3,4-diaza-2,4-hexadiene is synthesized and structurally characterized and its coordination chemistry with several metal salts is investigated. The complexes exhibit a non-interpenetrated square-grid type structure, where the staking of the grids in the structure determines the existence and size of any channels.

An electrodeposited Ag adlayer (upd, underpotential deposition) is utilized to improve monolayer photopolymerization of diphenyldiacetylene derivatives (DPDA) that would otherwise exhibit no polymerization in solid state. The optimal efficiency of polymerization takes place on upd-modified substrates that can generate ~45 degree tilt angle for DPDA derivatives.

Discrete Fourier transform (DFT) modulated filterbank transceivers are deigned for multipath fading channels. Low design and implementation costs are the advantages of the DFT modulated filterbanks.

An attempt was made to demonstrate systematically the temperature-dependent dc characteristics of InGaP-GaAs heterojunction bipolar transistors with and without sulfur treatment. The series resistance of base-emitter junction of studied device can be effectively reduced because of the use of sulfur passivation.

An underpotentially deposited (upd) interlayer between the self-assembled manolayers (SAMs) and gold substrate were used to demonstrate improvement in stability of SAMs. It is shown that the upd adlayers could be applied to improve the packing density of thiophenol SAMs due to controlling the binding scheme of the sulfur headgroup from an sp(super 3) to an sp hybridization configuration.

The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. The studied device provides the promise for low-voltage and low-power circuit applications.

CdSe/ZnTe type-II quantum dots (QDs) synthesized through the CdO precursor is discussed, where spectroscopic and femtosecond dynamic measurements disclose the rate of photoinduced electron/hole spatial separation decreases with increases in the size of the core, and it is independent of the thickness of the shell in the CdSe/ZnTe QDs. The findings are consistent with the binding strength of the electron and hole confined at the center of CdSe.

The study presents a novel optimization procedure for dynamic multiple-responses based in Taguchi's parameter design. The signal to noise (SN) ratio and system sensitivity are used to assess the performance of each response and principal component analysis is then performed on the SN values and system sensitivity values to obtain a set of uncorrelated components.

A new A1GaAs-GsAs-InAlGaP npn bulk-barrier optoelectronic switch (BBOS) with an AlGaAs-delta (n(super +))-GaAs-InAlGaP collector structure is fabricated and demonstrated. Findings show that because incident light change the potential spike for electrons thermionically emitted over it, the current-voltage (I-V) characteristics of the device were optically controllable.

A triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS) and studied. N-shaped and S-shaped negative-differential-resistance (NDR) characteristics show variations from dark to illumination conditions.

The hydrogen response characteristics and sensing properties of catalytic Pd/Al(sub 0.3)Ga(super 0.7)As metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are explored. Further the effects of hydrogen adsorption on device performances such as the current-voltage characteristics, sensitivity, barrier height variation, heat of adsorption and transient response are investigated.

An interesting new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET) is constructed and demonstrated. A study reveals that the PDDCHFET provides the promise for high-temperature and high-performance microwave electronic applications.

A family of discrete nanoscopic molecular architectures with well-defined shapes and sizes, varying from two-dimensional macrocycles to three-dimensional prismatic cages, was prepared following a ligand-directed symmetry-interaction approach. The solution structures were established by combinatorial utilization of (super 1)H NMR and ESI-MS and were found to be consistent with the solid-state structures.

Research has been conducted on achiral tripodal ligand tris(1-benzimidazolylethyl)amine complexes. The synthesis of these complexes and their characterization carried out via the use of IR, EPR and NMR spectroscopies, electrospray mass spectrometry, thermogravimetric analysis and X-ray crystallography are described.

The preparation of thin polyoxide through low-temperature wafer loading and N2 preannealing process gives smooth polyoxide/polysilicon interface and shows low oxide tunneling current. These polyoxides have a higher dielectric breakdown field when the top electrode is positively charged, a lower electron trapping rate and a larger charge-to-breakdown in contrast to the normal polyoxides. Thinner polyoxides grown on highly-doped polysilicon films at high oxidation temperature conduct less oxide tunneling current when the top electrode is positively charged.

The reactions of Mo2(OAc)2Cl2(PPh3) with tetraphos-2 and PH2PCH2CH2P(Ph)CH2CH2PPh2 (etp) in Ch2Cl2 produce Mo2(OAc)Cl3(n3-tetraphos-2) (1) and Mo2(OAc)Cl3(n3-etp)tetraphos-2 (2). The complexes 1 and 2 are twisted around the metal-metal bonds with a twist angle of 13.2 degrees and 11.4 degrees, respectively. NMR spectroscopic analysis indicates that both the complexes are bridged by eta-3-phosphine and acetate ligand. The tetraphos and etp ligand exhibits tridentate coordination with Mo centers. The absorption spectra of 1 and 2 are discussed.

Pseudomorphic characteristics, critical thickness and thermal stability of doped-channel field-effect transistors were evaluated in AlGaAs/InxGa1-xAs heterostructures with varying contents. Injection of a 150 angstrom units strained In0.15Ga0.85As channel improves the performance of the device but high-temperature heat treatment renders the channel unstable. Increasing In level up to x is equal to 0.25 deteriorates the device's performance due to strain relaxation in the strained channel.

Low-temperature processes at 620 degrees Centigrade yield polysilicon thin-film transistors (poly-Si TFTs) with liquid phase deposition silicon dioxide gate insulators. The characteristics of these TFTs are enhanced by plasma hydrogenation of the defects. The off-state current consists of three different parts, a resistive current, thermal generation current and the Frenkel-Poole emission current. These three divisions enhance the performance of TFTs.

3,7-triheterabicyclo (3.3.1)nonan-9-ones 2 functioned as precursors for the little compounds, represented by the compounds 2, in the preparation of specific 3,7,9-triheterabicyclo (3.3.2)decan-10-ones. In the solid states, three members of the bicyclo(3.3.2)decan-10-ones are present in boat-chair forms.

This paper presents a detailed analysis of transient response of electromagnetic pulse (EMP) and Gaussian pulse in anisotropic laminated composites. To this end, both the equivalent-transmission-line-circuit (ETLC) model and the finite-difference time-domain (FDTD) method are adopted in the time-domain analysis. In this study, numerical results are presented for graphite/epoxy (G/E) laminates, based on a model which treats each lamina as a homogeneous and anisotropic sheet. The factors to influence the transient response of anisotropic laminated composites, such as laminate thickness, fiber orientation, and the angle, frequency contents, and polarization of incident wave, are also investigated.

The plane-wave shielding properties of anisotropic laminated composites are analyzed, based on a model that treats each lamina as a homogeneous and anisotropic sheet and then uses a method that cascades the wave-transmission matrices in the computation. In this study, numerical results are presented for graphite/epoxy laminates. In particular, the parameters that influence the shielding effectiveness, such as material properties, laminate thickness, fiber orientation and anisotropy of laminates, angle and polarization of incident wave, are investigated in detail. For design purpose, empirical formulas are also proposed to estimate the shielding effectiveness of the laminated composites in the lower frequency range.

The spectral-domain approach is utilized to discuss the dispersion and leakage phenomenon in a coplanar waveguide structure caused by the substrate surface wave. In this study, the effective dielectric constant and the attenuation constant due to surface wave leakage are presented and discussed in detail.

An enhanced k-p optical calculation framework, based on the intracell interactions, is used to study the effects of bulk inversion asymmetry (tetrahedral) on the optical transitions of zinc blende semiconductor quantum wells. The study is found to be not very accurate for the calculations, as it does not reveal the variation in the optical transition strength of the complexes, which is mainly attributed to the inversion asymmetry of the substance.

Spin-splitting energies of wurtzite AlN and InN are calculated by using the linear combination of atomic orbital method and the data are analyzed by using the two-band k-p model. The studies have shown that spin-degenerate surface is present in the wurtzite Brillouin zone and the D 'yakonov-Perel' spin relaxation mechanism is suppressed for all spin components in the [001]-grown wurtzite quantum wells at a resonant condition by applying appropriate strain or a suitable gate bias.

A study analyzes questionnaire responses from Taiwanese businesses to examine the corporate social responsibility (CSR)-related practices implemented by small and medium-sized enterprises (SMEs), including their views on CSR education. Findings reveal that large enterprises consider CSR education more important than SMEs, and that the setting up of a CSR department and regular monitoring of CSR implementation in a firm have a significant positive impact on the firm's focus on CSR issues.

Designed peptide conjugate molecules are used for simultaneously directing both the synthesis and assembly of gold nanoparticles superstructures. The particle capping agents such as citrate and adenosine triphosphate is used for adjusting the metrics of double-helical gold nanoparticles assemblies, particularly interhelical distances and particle size.

The mechanisms of peroxynitrite (ONO[O.sup.-])-induced endothelial nitric oxide synthase (eNOS) dysfunction and their dose dependence are examined to study the controversial inactivation of eNOS by peroxynitrite due to oxidation of the eNOS zinc thiolate cluster rather than the cofactor tetrahydrobiopterin (B[H.sub.4]). The loss of Zn binding induced by peroxynitrite treatment which does not account for loss of enzyme activity suggested that ONO[O.sup.-]-induced eNOS inactivation is primarily due to oxidation of B[H.sub.4] and irreversible destruction of the heme/heme center.