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1. Largely tunable midinfrared (8-12 mu m) difference frequency generation is isotropic semiconductors

Author

Haidar, R., Mustelier, A., Kupecek, Ph., Rosencher, E., Triboulet, R., Mennerat, G., and Lemasson, Ph.

Subjects
Infrared radiation -- Research, Semiconductors -- Research, Semiconductors -- Optical properties, Gallium arsenide -- Research, Gallium arsenide -- Optical properties, Physics
Abstract

Largely tunable midinfrared (8-12 mu m) generation is obtained in GaAs and AnZe slabs by difference frequency mixing of optical paramagnetic oscillator output waves (approximately 2 mu m). The coherence lengths determined in semiconductor wedges are in agreement with estimates from known Sellmeir formulas.

Published
2002

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