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1. An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique

Author

Lee, Sang Yun, Cetiner, Bedri Artug, Torpi, Hamid, Cai, S.J., Li, Jiang, Alt, K., Chen, Y.L., Wen, Cheng P., Wang, Kang L., and Itoh, Tatsuo

Subjects
High-electron-mobility transistors -- Research, Neural networks -- Usage, Transistors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A novel gallium nitride-based high electron mobility transistor power amplifier design is presented that uses an artificial neural network modeling technique.

Published
2001

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