Search

This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (MCSA) to form the SiC layer is proposed. This new approach enables the growth of epitaxial GaN layers with low defect content and facilitates transfer to any surface. The paper details the technology of manufacturing LEDs on SiC/Si substrates obtained by the MCSA and elaborates on the benefits of using these substrates in LED production. Additionally, the advantages of the growth interface between SiC and Si materials are discussed. Moreover, it is found that thinner SiC layers (

A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility.

International audience; A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs) exploits InGaN-quantum-dot-based active regions. However, the role of local composition fluctuations inside the quantum dots and their effect of the device characteristics have not yet been examined in sufficient detail. Here, we present numerical simulations of a quantum-dot structure restored from an experimental high-resolution transmission electron microscopy image. A single InGaN island with the size of ten nanometers and nonuniform indium content distribution is analyzed. A number of two- and three-dimensional models of the quantum dot are derived from the experimental image by a special numerical algorithm, which enables electromechanical, continuum k→·p→, and empirical tight-binding calculations, including emission spectra prediction. Effectiveness of continuous and atomistic approaches are compared, and the impact of InGaN composition fluctuations on the ground-state electron and hole wave functions and quantum dot emission spectrum is analyzed in detail. Finally, comparison of the predicted spectrum with the experimental one is performed to assess the applicability of various simulation approaches.

International audience; We exploit the three-dimensional (3D) character of the strain field created around InGaN islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer for the creation of spatially correlated electronically coupled quantum dots (QDs). The laterally inhomogeneous vertical out-diffusion of In atoms during growth interruption is the basic mechanism for the formation of InGaN islands within as-deposited 2D layers. An anisotropic 3D strain field created in the first layer is sufficient to justify the vertical correlation of the islands formed in the upper layers spaced by a sufficiently thin GaN layer. When the thickness of a GaN spacer exceeds 1 nm, QDs from different layers under the same growth conditions emit independently and in the same wavelength range. When extremely thin (less than 1 nm), a GaN spacer is formed solely by applying short GI, and a double wavelength emission in the blue and green spectral ranges evidences the electromechanical coupling. With k→·p→ calculations including electromechanical fields, we model the optoelectronic properties of a structure with three InGaN lens-shaped QDs embedded in a GaN matrix, with three different configurations of In content. The profiles of the band structures are strongly dependent on the In content arrangement, and the quantum-confined Stark effect is significantly reduced in a structure with an increasing gradient of In content from the top to the bottom QD. This configuration exhibits carrier tunneling through the QDs, an increase of wave functions overlap, and evidence emerges of three distinct peaks in the spectral range.

The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was investigated by temperature-dependent and time-resolved room-temperature photoluminescence measurements and analyzed via localized-state ensemble model. The results show that dislocations decrease non-radiative recombination time and do not affect either radiative recombination time or non-radiative recombination mechanism. Moreover, dislocation-related broadening, increasing linearly with increased dislocation density, was found to take place. However, a significant part of spectral width (∼55 meV) is not defined by either dislocation-induced or alloy- and thermally-induced broadening, revealing the existence of other broadening mechanisms (e.g. carrier–carrier scattering-induced broadening).

The future generation of modern illumination should not only be cheap and highly efficient, but also demonstrate high quality of light, light which allows better color differentiation and fidelity. Here we are presenting a novel approach to create a white solid-state light source providing ultimate color rendition necessary for a number of applications. The proposed semi-hybrid device combines a monolithic blue-cyan light emitting diode (MBC LED) with a green-red phosphor mixture. It has shown a superior color rendering index (CRI), 98.6, at correlated color temperature of around 3400 K. The MBC LED epi-structure did not suffer from the efficiency reduction typical for monolithic multi-color emitters and was implemented in the two most popular chip designs: “epi-up” and “flip-chip”. Redistribution of the blue and cyan band amplitudes in the white-light emission spectrum, using the operating current, is found to be an effective tool for fine tuning the color characteristics. (Figure presented.).

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

We demonstrate a resonant Bragg structure formed by quasi-two-dimensional excitons in periodic systems of InGaN quantum wells (QWs) separated by GaN barriers. When the Bragg resonance and exciton–polariton resonance are tuned to each other, the medium exhibits an exciton-mediated resonantly enhanced optical Bragg reflection. The enhancement factor appeared to be largest for the system of 60 QWs. Owing to a high binding energy and oscillator strength of the excitons in InGaN QWs, the resonant enhancement was achieved at room temperature. The samples were grown by the metal–organic vapor-phase epitaxy (MOVPE) on GaN-on-sapphire templates. The most important technological problem of the developed structures is inhomogeneous broadening of the excitonic states due to nonuniform chemical composition of the QWs driven by InN–GaN phase separation trend. We addressed this problem by variation of the vapor pressure, growth rate, growth interactions, and admixing of hydrogen during the MOVPE. The lowest width of 74 meV at room temperature and 41 meV at 77 K was achieved for the excitonic emission line from a single InGaN QW.

In this study we investigate the possibility of a-GaN ELOG process and its peculiarities for stripes of various orientations. It is shown that stripe orientation allows governing such important parameters of ELOG-process as lateral growth rate, voids high, fast growth direction. The intermediate orientations of stripe windows (differ from conventional (0001) and (1–100)) can be effectively used for double-cross ELOG process. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

In this paper we obtained GaN and InGaN nanowires on AlN/Si (111) templates via pulsed Metal Organic Chemical Vapour Deposition (MOCVD). The growth modes were investigated, in which selective growth is possible. The impact of NH3 flow and TMG flow and exposure time were investigated. Also the possibility of using indium catalyst was studied. It was shown that In can be used in Au-In melt and as self-suffisient catalyst. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A set of AlGaN/GaN superlattices (SLs) with various periods (5-40 nm) and various composition of barriers and buffer layers was grown by MOCVD on sapphire substrates. The aluminum incorporation depending on growth rate was investigated. It was observed that for growth of AlGaN layers with AlN mole fraction above 15-20% the growth rate must be significantly reduced to avoid aluminum incorporation saturation. Structures were studied by X-ray diffraction, Raman scattering, and optical absorption spectroscopy. A significant red-shift of absorption edge was observed for SLs with period of 10-40 nm.

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.