Search

All-inorganic lead halide perovskite nanocrystals (NCs) have been widely investigated as highly promising optical gain materials due to their compelling electrical and optical properties. Although many efforts have been carried out, a deep understanding of perovskite NC vertical-cavity surface-emitting lasers (VCSELs) is elusive, which is very important in the development of photoelectronic integrated circuits. Along these lines, in this work, a low lasing threshold (22 μJ/cm2) single-mode VCSEL consisting of CsPbBr3 NCs film and two distributed Bragg reflectors was successfully constructed. The CsPbBr3 NCs were synthesized by using the supersaturated recrystallization method. Interestingly, benefiting from the strong coupling between the active layer and the optical field in the cavity, a single-mode lasing at 527 nm was demonstrated under femtosecond optical pumping. The carrier dynamics of the perovskite NC VCSEL was also thoroughly investigated by performing pump intensity-dependent time-resolved photoluminescence measurements. The typical gain-switching phenomenon was observed with an ultrafast decay of the laser pulse of ∼10 ps. Our work provides valuable insights for the implementation of the CsPbBr3 NC VCSEL for various optoelectronic applications.

Light-trapping design is a good strategy to obtain ultra-thin solar cells without sacrificing conversion efficiency. If applied to III-V compound multi-junction solar cells (MJSCs), it not only can greatly reduce the cell cost and weight, but also improve its radiation tolerance when operating in space. This paper formulates all subcell absorptance in an arbitrary N-junction solar cell with an ideal front textured surface and perfect rear mirror, including the effects of complex absorption and luminescence coupling in the stack. Taking the well-known InGaP/GaAs/InGaAs triple-junction solar cell (3J) for instance, the ultra-thin design and the conversion efficiency both in radiative limit and that with subcell internal radiative efficiency below-unity are predicted. Our results show that such front-textured 3J with top-subcell thickness varying from 200 to 500 nm can enhance light absorption so significantly that more than 28% of top-subcell, 56% of middle-subcell, and 90% of bottom-subcell thickness will be cut down when compared with the smooth-surfaced 3J. Typically, (350 nm, 315 nm, 28 nm) is recommended as the optimal design for the front-textured 3J with an experimental efficiency of over 38%. For the same benchmarks on photocurrent of 15.1 mA/cm2 or detailed balance limit of 44%, the minimum total thickness (all subcells only) in the front-textured 3J is only 1453 nm, that is even 71% of that in the rear-textured 3J, quantitatively revealing front texturization has a greater potential for material cut-down than rear texturization. Finally, the impacts of non-ideal scattering texturization on cell performance and ultra-thin design are also discussed. This work provides theoretical guidance for experimental studies on ultra-thin and high-efficient MJSCs with various light-trapping strategies.

The local breakdown behavior may be harmful to solar cells and could possibly permanently damage the cell. Therefore, understanding the breakdown mechanisms in commercially competitive photovoltaic devices such as monocrystalline silicon (Si) solar cells is of great importance. Here, by using the reverse-biased electroluminescence (ReBEL) imaging technique, we observed three types of breakdown phenomena in monocrystalline Si solar cells: defect-induced breakdown, avalanche breakdown, and early breakdown. We have applied a variety of methods to diagnose each breakdown mechanism. The positions of defect-induced breakdown were first determined by combining EL and ReBEL imaging. An innovation method, the distributed circuit modeling was further introduced to trace the formation of different defect-induced breakdown sites. It is firstly applied this approach in the analysis of the breakdown mechanism. Then, avalanche breakdown was demonstrated by the temperature coefficient. The origin of its emission spectra was analyzed by the Si energy band structure combined with Baraff theory. Moreover, the characteristic of early breakdown was found to be consistent with the Zener effect, which may be caused by the metal stains such as aluminum (Al) during the manufacturing process.

In this paper, Sb2S3 thin-film solar cells are fabricated by the vapor transport deposition (VTD) method. The effect of the source-substrate proximity on the performance of Sb2S3 thin-film solar cells has been investigated and comparative studies of different source-substrate proximity are carried out. The device efficiency is improved from 0.83 to 3.02% by optimizing the source-substrate proximity with the augment of open-circuit voltage, short-circuit current density and fill factor. X-ray diffraction and scanning electron microscopy studies indicate that the deposited Sb2S3 films can achieve optimal grain orientation, high crystallinity, and compact morphology. Moreover, the current transport mechanism is analyzed in detail from dark current density–voltage (J-V) measurements and shows the optimal sample to be least affected by Shockley-Read-Hall recombination and space-charge-limited current (SCLC). Meanwhile, temperature and light intensity-dependent open-circuit voltage measurements reveal the carrier recombination rates are lowest for the optimal cell in all regions, including the CdS/Sb2S3 interface, the space-charge region (SCR), and the quasi-neutral region (QNR). These can account for the efficiency enhancement of the optimal cell and can be used to facilitate the further development of Sb2S3 thin-film solar cells.

We demonstrate that the magneto-optical Kerr effect at normal incidence in the terahertz (THz) frequency range is useful for evaluating carrier transport properties of particular layers of a p-n junction. Since a single p-type thin film only exhibits a small magneto-optical Kerr effect, magneto-optical Kerr spectroscopy cannot be used to determine the carrier densities of such a film with high sensitivity. However, because the electric field is enhanced at the p-layer in a p-n junction due to the interference between the THz waves that are reflected at the highly doped substrate and the p-layer at the surface, it is possible to conduct magneto-optical Kerr spectroscopy with a higher sensitivity. We numerically calculate and experimentally determine the spectra of the ellipticity and polarization rotation angles for single n- and p-GaAs epitaxial layers and GaAs-based photovoltaic devices with a p-i-n structure and evaluate the carrier densities of the n- and p-layers. At normal incidence, this method has a high spatial resolution, which is beneficial for imaging of large-area devices.

All-inorganic perovskite microwire lasers, which have intrinsic high material gain and short cavity, especially favor the generation of ultrashort optical pulses via gain switching for various potential applications. Particularly, the ultrashort gain-switched pulses may extend perovskite microwires to previously inaccessible areas, such as ultrafast switches, and chipscale microcombs pumping souces in photonic integrated circuits. Here, we show 13.6-ps ultrashort single-mode green pulses from the gain-switched CsPbBr3 microwire lasers under femtosecond optical pumping. The gain-switching dynamics is experimentally investigated by a streak camera system. The excitation fluence dependences of pulse width, delay time and rise time of the output pulses show good agreements with the rate equation simulations with taking gain nonlinearities and carrier recombination ABC model into account. Our results reveal that perovskite microwire lasers have potential for ultrashort pulse generation, while the low transient saturated gain, which may result from the high transient carrier temperature under femtosecond pumping is a significant limitation for further pulse shortening.

Despite many successful realizations of laser operations in various micro/nanostructured lead halide perovskites (LHPs), the electron–hole plasma (EHP) lasing dynamics has only rarely been reported...

In this paper, we demonstrate numerical evidence that interfacial passivation in the Sb2Se3 solar cell forming the configuration of indium tin oxide (ITO)/SnO2/CdS/Sb2Se3/Au is beneficial for suppr...

This is the first study of lead halide perovskites (LHPs) that compares the coupling strengths between longitudinal optical (LO) phonons and free or localized excitons. In this research, we measure...

The equilibrium structures and optical properties of the photolabile caged luciferin, (7-diethylaminocoumarin-4-yl)methyl caged D-luciferin (DEACM-caged D-luciferin), in aqueous solution were investigated via quantum chemical calculations. The probable conformers of DEACM-caged D-luciferin were determined by potential energy curve scans and structural optimizations. We identified 40 possible conformers of DEACM-caged D-luciferin in water by comparing the Gibbs free energy of the optimized structures. Despite the difference in their structures, the conformers were similar in terms of assignments, oscillator strengths and energies of the three low-lying excited states. From the concentrations of the conformers and their oscillator strengths, we obtained a theoretical UV/Vis spectrum of DEACM-caged D-luciferin that has two main bands of shape nearly identical to the experimental UV/Vis spectrum. The absorption bands with maxima similar to 384 and 339 nm were attributed to the electronic excitations of the caged group and the luciferin moiety, respectively, by analysis of the theoretical UV/Vis spectrum. Furthermore, the analysis showed that DEACM-caged D-luciferin is excited in the caged group only by light of wavelength ranging within 400-430 nm, which is in the long-wavelength tail of the 384 nm band. This should be tested to lower damage upon photocleavage.

形態: 図版あり, Physical characteristics: Original contains illustrations, Accepted: 2020-01-23, 資料番号: PA2010053000

We propose a novel method for controlling the high-harmonic generation (HHG) with a high dynamic range in single-layer graphene. We find that, by utilizing shear strain, a significant enhancement or quenching of HHG is possible over a range of several orders of magnitude. This feature is made possible by the resonance mechanism at a van Hove singularity. Therein, the shear strain controls the configurations of the two Dirac cones, resulting in changes in the energy and dipole moment at the saddle point of the band dispersion. Our findings provide a way for modulating or switching light by using a nano-optomechanical device composed of single-layer graphene., Comment: 20 pages, 8 figures

Two- and four-terminal photovoltaic (PV)–thermoelectric (TE) hybrid tandems are studied theoretically based on the scaling of coupled nonlinear equations for heat and electrical currents. We generally prove the equivalence between achievable output powers by two- and four-terminal tandems. If the PV and TE segments are adjusted in terms of numbers, areas, and connections in a four-terminal tandem, lossless matching is always possible in current or voltage for series or parallel two-terminal tandems while maintaining other designs, materials, or installation environments. That is, the same output power is always achievable in two- and four-terminal tandems using such adjustments.

We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integration processes. Experimentally, we assembled the hybrid photonic structure by transfer printing, and demonstrated single-photon generation from a QD and its unidirectional output from the waveguide. These results point out a promising approach toward scalable integration of SPSs on silicon quantum photonics platforms., 17 pages, 5 figures

We investigated the radiation damage to carrier lifetimes in the neutral and depletion regions of the InGaP and GaAs subcells of an InGaP/GaAs/Ge triple-junction solar cell. It is difficult to clarify the degradation characteristics of the carrier lifetime in each region using the conventional analysis method (e.g., the dark current–voltage characteristic analysis), so we propose a novel method using the internal luminescence efficiency. The radiation damage coefficients for the carrier lifetimes in the neutral region of InGaP and GaAs subcells were two or three orders of magnitude larger than those in the depletion region. This result suggests that the effective radiation-induced defects in the regions, which significantly impact a solar cell's electrical characteristics, differ. This paper discusses the effective radiation-induced defects that contribute to the output degradation in each region. We compare the radiation damage coefficients for the carrier lifetimes obtained in our analysis, the product of the capture cross section, and the defect introduction coefficient of each defect reported in previous studies.

The reduction of the non-radiative recombination rate by modifying the solar cell structure without improving the material quality is discussed. Our calculations show that adopting a heterojunction design instead of a homojunction design can lead to a reduction of the non-radiative recombination rate in the depletion region due to formation of a depletion region in the wide–gap emitter material, which has a lower intrinsic carrier density. We experimentally confirm the relation between the non-radiative recombination rate in the depletion region and the carrier concentration in the wide-gap emitter layer.

Stabilizing mechanisms of three possible isomers (phenolate-keto, phenolate-enol, and phenol-enolate) of the oxyluciferin anion hydrated with quantum explicit water molecules in the first singlet excited state were investigated using first-principles Born–Oppenheimer molecular dynamics simulations for up to 1.8 ns (or 3.7 × 106 MD steps), revealing that the surrounding water molecules were distributed to form clear single-layered structures for phenolate-keto and multi-layered structures for phenolate-enol and phenol-enolate isomers. The isomers employed different stabilizing mechanisms compared to the ground state. Only the phenolate-keto isomer became attracted to the water molecules in its excited state and was stabilized by increasing the number of hydrogen bonds with nearby water molecules. The most stable isomer in the excited state was the phenolate-keto, and the phenolate-enol and phenol-enolate isomers were higher in energy by ∼0.38 eV and 0.57 eV, respectively, than the phenolate-keto. This was in contrast to the case of ground state in which the phenolate-enol was the most stable isomer.

Electron tunneling dynamics in asymmetric coupled triple InGaN/GaN quantum wells (ACQWs) with different well thicknesses of 3.0 nm (QW1), 2.5 nm (QW2), and 2.0 nm (QW3) were quantitatively investigated based on the time- and spectrally-resolved photoluminescence (PL) measurements and the rate-equation theory. Under weak excitation, only the emission peak of the widest well was observed at room temperature due to the effective electron tunneling from a wide to a narrow well, while all three emission peaks of the distinct wells were obtained at a high excitation level. The PL-intensity ratios of the wells in the initial transient spectra differed from those in the time-integrated spectra. With a set of rate equations and the experimental results of PL ratios and decay times, a 2 ns tunneling time from QW2 to QW1 was extracted and was decreased to 0.5 ns with increasing excitation, while the one from QW3 to QW2 was extracted to be ∼ 170 p s . The extracted tunneling times are in good qualitative agreement with the data from the exponential fitting of the PL decay traces, which can be interpreted by the energy mismatches between relevant energy levels in the ACQWs. These results provide not only a better understanding of the carrier recombination and tunneling processes in the ACQW systems but also a useful guidance for high-performance ACQW-based optoelectronic and functional devices.

We established a quantitative detection method for immunohistochemistry based on a reference standard light-emitting diode, protein microarray and antibody-fused bioluminescent protein. In this procedure, we calibrated the bioluminescence imaging system and prepared the calibration curve between antigen and antibody-fused bioluminescent protein using a protein microarray. Then we converted the detecting light signal to antigen count via absolute photon number in the bioluminescent images; there was a resulting threefold difference in the target antigen number between normal and cancerous tissues. Our technique can easily compare immunohistological images and evaluate tumor progression in quantitative pathological diagnosis.

Heat-recovery (HERC) solar cell is a concept of solar cell that converges heat into electricity and enables silicon solar cell to have high efficiency exceeding the Shockley-Queisser limit without requiring fast carrier extraction. In this paper, we show by numerical simulation its robustness against strong non-radiative recombination of the carriers and a positive effect arising from the bandgap reduction in the energy filtering layers.

We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture., 16 pages, 9 figures

We report efficient quantum-dot single-photon sources with unidirectional output integrated on Si by transfer printing. The device was designed to be robust against misalignment accompanied by the hybrid integration. Efficient single-photon generation was experimentally confirmed.

Bioluminescence imaging (BLI) demonstrates cellular events as a light signal at the single-cell level using a highly sensitive, cooled CCD camera. However, BLI signals are relative values and thus, images taken on different days or using different equipment cannot be compared directly. We established a reference LED light source that was characteristic of the total flux and light distribution and calibrated the BLI system as an absolute light signal. This calibrated BLI system revealed that the average light signal of beetle luciferase was at an attowatt level per sec at the single cell level.

Perovskite nanocrystals (PNCs) have emerged as highly promising optical gain materials for laser applications. Despite the recent surge of reports on their lasing performance, it remains a challenge to achieve PNCs-based single-mode vertical cavity surface emitting lasers (VCSELs) because of their inhomogeneous gain saturation. Here, we successfully demonstrate high performance single-mode VCSELs using CsPbBr3 PNCs that were synthesized via a facile ligand-assisted reprecipitation strategy. The optical gain medium with wide crystal size range was fabricated, and the dense assembly of each individual PNCs was expected to offer a homogeneous optical continuum to reduce gain saturation inhomogeneity. The fabricated VCSELs exhibit excellent single-mode lasing at ~541 nm without mode hopping and high spontaneous emission coupling factor of ~0.24, which is one order of magnitude higher than those of nitride-based VCSELs. Through streak camera direct observations, the stimulated emission of the laser device exhibits an ultrafast decay of ~10 ps, and the electron hole plasma (EHP) mechanism is considered responsible for stimulated emission in the VCSELs. This work paves the way toward next-generation high performance PNC-based single-mode laser devices with reduced fabrication cost for practical application.

The combination of lasers and solar cells has potential applications in many areas. Therefore, investigating the laser induced damage and defect formation in such cells is crucial. In this study, a Cu(In, Ga)Se2 solar cell was irradiated with a 532 nm continuous wave laser beam. The damage threshold power density with irradiation for 10 s was found to be approximately 5000 W/cm2 by analyzing the light current density–voltage curves and the variation of the solar cell efficiency after laser exposure. Further, absolute electroluminescence (EL) imaging with distributed circuit modeling was used to determine the laser induced defects. By simulating the measured injection current dependent EL intensities of the defect spots, the defects created by exposure to laser power densities less than 5000 W/cm2 could be mainly attributed to increased series resistance or increased transparent conductive oxide layer resistance, whereas those created by exposure to laser power densities greater than 5000 W/cm2 could be mainly attributed to decreased shunt resistance.

Current defect inspection methods for photovoltaic (PV) devices based on electroluminescence (EL) imaging technology lack juggling both labor-saving and in-depth understanding of defects, restricting the progress towards yield improvement and higher efficiency. Herein, we propose an adaptive approach for automatic solar cell defect detection and classification based on absolute EL imaging. Specifically, we first develop an unsupervised algorithm to automatically detect defects referring to the defect features in EL images. Then a diagnosis approach is proposed, which statistically classifies the detected defects based on the electrical origin. To the best of our knowledge, the proposed method is the first effort to integrate automatic defect detection with fine-grained classification. Experimental results on multiple types of solar cells show that the proposed method can achieve the average uncertainty of 5.15% at the minimum, with by up to 98.90% optimization ratio compared with two conventional methods. The proposed method is expected to provide more guiding feedback in both practical design and reliability diagnosis of the PV industry.

A spatially resolved absolute electroluminescence (EL) imaging method was utilized to analyze the photovoltaic properties and resistive loss properties of a GaAs thin-film solar cell. The I–V relation was extrapolated from the absolute EL efficiency measurements in conjunction with the external-quantum-efficiency (EQE) measurements; the EL extrapolated I–V relation has a merit over the conventional I–V relation measured with a solar simulator that it could eliminate the series resistance effect caused by external probe contact. Then, the mapping of the internal voltage of the solar cell and the sheet resistance of the window layer of the solar cell were obtained from the calibrated absolute EL imaging method. Finally, optic electroconversion losses of the solar cell including radiative loss, nonradiative loss, thermalization loss, transmission loss, and junction loss were quantified given by the EL and EQE measurements.

High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8–1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.

By using absolute electroluminescence measurement, we characterized current-dependent external radiative efficiency of GaInAs/GaAsP multiple quantum well (MQW) single-junction solar cells with and without a back distributed Bragg reflector (DBR). Internal radiative efficiency ( η int) under illuminated condition was quantified for analyzing their difference in photovoltaic performances. It was revealed that MQWs showed an advantage of improved η int compared with a bulk layer, and that a back DBR indeed improved conversion efficiency via double-pass absorption of sun light, but improvement via reduction of rear radiative emission loss toward substrate was small. Efficiency add-on via improved material quality, or η int, in the same structures was predicted.

Using heat that otherwise would be lost is important for efficient use of solar energy, but continues to be held back for lack of an ultrathin photovoltaic absorber that permits both sufficient absorption of light and ultrafast extraction of ``hot'' carriers before they lose their kinetic energy. This article presents a concept to enable heat recovery in a solar cell $w\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}h\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}u\phantom{\rule{0}{0ex}}t$ the need for ultrafast carrier extraction. This thermoelectric approach should impact engineering solutions for further improvement in silicon solar cells, beyond the Shockley-Queisser limit.

We investigate the photon-dressed state of excitons in bulk GaAs by optical pump-probe spectroscopy. We reveal that the high-energy branch of the dressed states continuously evolves into a singular enhancement at the absorption edge in the high-density region where the exciton picture is no longer valid. Comparing the experimental result with a simulation based on semiconductor Bloch equations, we show that the dressed state in such a high-density region is better viewed as a Bardeen-Cooper-Schrieffer-like state, which has been theoretically anticipated to exist over decades. Having seen that the dressed state can be regarded as a macroscopic coherent state driven by an external light field, we also discuss the decoherence from the dressed state to an incoherent state after the photoexcitation in view of the Coulomb enhancement in the transient absorption.

We report local wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip as well as in-situ spectral matching between two dissimilar sources. All the necessary heterogeneous integration processes were performed in a simple pick-and-place manner based on transfer printing, largely facilitating the fabrication of complicated device structures.

Two organic-inorganic halide CH3NH3PbI3 perovskite solar cells prepared in the same experimental batch but having different power conversion efficiencies −18.46% and 17.15%—were investigated based on the absolute electroluminescence (EL) efficiency measurements and traditional I-V measurements. The possible factors that affect the power conversion efficiency were also investigated. Comparing the experimental I-V curves of the two solar cells, it was found that the short-circuit currents (Jsc) were nearly the same; however, the open-circuit voltages (Voc) were markedly different. Moreover, the deduced I-V curves from the absolute EL efficiencies of the two solar cells, which were mainly affected by the material quality, were almost the same, proving that the device processing technology has a vital effect on Voc.

Experimental photoabsorption spectra of three possible isomers (phenolate-keto, phenolate-enol, and phenol-enolate) of oxyluciferin anions in aqueous solution were reproduced by first-principles time-dependent density functional theory simulations in which the entire system including the oxyluciferin anion and 64 water molecules were modeled by full quantum mechanics (full QM), unlike the conventional hybrid method, where the surrounding water molecules are modeled by molecular mechanics (MM) or a continuum solvent model. The full QM photoabsorption spectra were calculated from 1000 structures that had been obtained using the first-principles Born-Oppenheimer molecular dynamics simulations, which included the van der Waals correction, to take into account the effect of dynamical fluctuations of the hydration structure. The full QM calculation with CAM-B3LYP functional, which is the most elaborate one and is apparently the most consistent with experiment, is compared to others obtained with different levels of the functional and the solvent model. The amount of charge leakage from the oxyluciferin anions to the aqueous solution is found to differ significantly between the ground and excited states and is strongly dependent on the simulation method. The conventional solvent models do not take this into account, but the QM/MM can do it appropriately when including more than 10 water molecules into the QM region.

The possibility of evaluating minority-carrier mobility and lifetime by measuring fast photovoltage dynamics of completed cells via time-resolved photoemission spectroscopy is investigated. A numerical simulation based on drift-diffusion model is performed to investigate how mobility and lifetime can be extracted. A simulation assuming a constant lifetime shows that photovoltage decay reflects carrier lifetime over two orders of magnitude of the photo-injection level while photoluminescence decay does not. The possibility of a detailed analysis on recombination mechanisms is discussed. The discrepancy in the magnitude of photovoltage observed in the previous measurement was investigated. The contribution from surface band-bending is discussed.