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4. The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces

6. Critical role of terminating layer in formation of 2DEG state at the $LaInO_{3}$/$BaSnO_{3}$ interface

7. High- k perovskite gate oxide for modulation beyond 10 14 cm −2

8. High

11. Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO3

12. Role of the interface in controlling the epitaxial relationship between orthorhombic LaInO3 and cubic BaSnO3

13. Remote Doping of the Two-Dimensional-Electron-Gas State at the LaInO3 / BaSnO3 Polar Interface

14. 2×2R45∘ surface reconstruction and electronic structure of BaSnO3 film

15. Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface

16. Interface polarization model for a 2-dimensional electron gas at the BaSnO

17. Melt Growth and Physical Properties of Bulk LaInO 3 Single Crystals

18. High mobility field effect transistor of SnOx on glass using HfOx gate oxide

19. Fermi level pinning and band bending in δ-doped BaSnO3

20. Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4

21. Transparent thin film transistors of polycrystalline SnO2−x and epitaxial SnO2−x

22. Oxygen diffusion process in a Ba0.96La0.04SnO3thin film on SrTiO3(001) substrate as investigated by time-dependent Hall effect measurements

23. Band gap and mobility of epitaxial perovskite BaSn1−xHfxO3 thin films

24. Structural characterization of the LaInO3/BaSnO3 interface via synchrotron scattering

25. Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching

26. Effects of tensile stress on the resonant response of Al thin-film and Al-CNT nanolaminate nanomechanical beam resonators

27. LaInO3/BaSnO3 polar interface on MgO substrates

28. Identification of F impurities in F-doped ZnO by synchrotron X-ray absorption near edge structures

29. Effect of F-inclusion in nm-thick MgO tunnel barrier

30. High-frequency micromechanical resonators from aluminium–carbon nanotube nanolaminates

31. Observation of biological samples using a scanning microwave microscope

32. Electrical characteristics and interface structure of magnetic tunnel junctions with hafnium oxyfluoride barrier

33. Characterization of aluminum oxyfluoride barrier in magnetic tunnel junctions

34. Evolution of Electrical Properties of Magnetic Tunnel Junction through Successive Dielectric Breakdowns

35. Observation of the Ni2 O3 phase in a NiO thin-film resistive switching system

36. Interface chemistry and electrical properties of SrVO3/LaAlO3 heterostructures

37. Electronic transport inBa1−xKxBiO3single crystals

38. The effect of microstructure on the electrical properties of YBCO interface-engineered Josephson junctions

39. Scanning probe microscopy for the imaging and control of ferroelectric oxides

40. Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 /SrRuO 3 Heterostructures

41. Nanosession: Mott Insulators and Transitions

42. Properties of cobalt-doped YBa2Cu3O7−δ thin films

43. Pair Tunneling fromc-AxisYBa2Cu3O7−xto Pb: Evidence fors-Wave Component from Microwave Induced Steps

44. High-k perovskite gate oxide BaHfO3

45. Electrical characteristics and interface structure of magnetic tunnel junctions with aluminum oxyfluoride barrier

46. High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate

47. Magnetoresistance properties of thin films of the metallic oxide ferromagnetSrRuO3

48. Conducting interface states at LaInO3/BaSnO3 polar interface controlled by Fermi level

49. Correlation of Vortex Motion in High-TcSuperconductors