Search

In this work, 1200 V SiC JMOS devices with different Wsch (2 μm, 2.5 μm and 3 μm) are fabricated. The single unclamped inductive switching (UIS) tests under different Vgs_off (-5 V and 0 V) are carried out to investigate the avalanche capability. The avalanche robustness among various Wsch under same Vgs_off is also compared and analyzed by simulation. The different failure mechanisms between different Vgs_off are studied by failure analysis and simulation. The method of improving avalanche ruggedness of JMOS is proposed.

To address the problem of weak robustness against geometric attacks of remote sensing images' digital watermarking, a robust watermark- ing algorithm based on template watermarking is proposed in this paper, which improves the robustness of digital watermarking against geometric attacks by constructing stable geometric attack invari- ant features. In this paper, the Discrete Fourier Transform domain template watermark is used as the invariant feature against geometric attacks, and the embedding of the cyclic watermark is used to improve the watermark robustness for recovering the watermark synchroniza- tion relationship. To achieve blind extraction of the watermark, a parameter extraction method based on noise extraction is designed. The experimental results demonstrate that the proposed method can effectively improve the robustness of digital watermarking of remote sensing images against geometric attacks. Meanwhile, it can also resist common image processing attacks and compound attacks.

Artificial intelligence (AI) technology has huge scope in developing models to predict the survival rate of critically ill patients in the intensive care unit (ICU). The availability of electronic clinical data has led to the widespread use of various machine learning approaches in this field. Innovative algorithms play a crucial role in boosting the performance of models. This study uses a stacked ensemble model to predict mortality in ICU by incorporating the clinical severity scoring results, in which several machine learning algorithms are employed to compare the performance. The experimental results show that the stacked ensemble model achieves good performance compared with the model without integrating the severity scoring results, which has the area under curve (AUC) of 0.879 and 0.862, respectively. To improve the performance of prediction, two feature subsets are obtained based on different feature selection techniques, labeled as SetS and SetT. Evaluation performances show that the SEM based on the SetS achieves a higher AUC value (0.879 and 0.860). Finally, the SHapley Additive exPlanations (SHAP) analysis is employed to interpret the correlation between the risk features and the outcome.

In this work, the influences of P-well design and turn-off gate-to-source bias on the surge robustness of SiC MOSFET’s body diode are studied. Devices with high and low P-well doping concentration designs are stressed with surge current pulses when gate-to-source is biased with 0V or -5 V. The gate-to-source bias is found to have effects on the surge capability of the low P-well doping designed device. In the case of 0 V bias, the channel is prone to turning on and acquires a higher surge capability than the devices under the -5 V. On the other hand, the surge capability of high P-well doping designed device is found less influenced by the gate-to-source bias. Furthermore, threshold voltage instability after repetitive surge pulses is also investigated. The device with low P-well doping shows better threshold stability due to its lower interface trap density. Based on the results above, a design methodology is proposed from the view of device mechanism and operation condition. Relatively low P-well doping design and negative gate bias are recommended for SiC MOSFET, as they can improve the single pulse surge robustness of body diode and minimize the threshold voltage instability in repetitive surge pulse events.

Objectives The Pediatric Reference Intervals in China (PRINCE) was initiated to establish the reference intervals (RIs) of Chinese children, as well as to make it possible to compare the variability of biochemical markers among countries internationally. Methods Healthy participants, aged up to 20 years, from 11 provinces across China, were enrolled in PRINCE and according to a standard screening procedure, that included a questionnaire survey, physical examinations and laboratory tests. Fasting venous blood specimens were collected. All serum specimens were analyzed with Cobas C702 in the center laboratory, i.e. clinical laboratory of Beijing Children’s Hospital, with certified qualification (ISO15189). The nonparametric method recommended by Clinical Laboratory Standards Institute guidelines, was used to calculate the age- and sex-specified RIs. Results Among the 15,150 participants enrolled, 12,352 children (6,093 males and 6,259 females) were included to calculate RIs. The RIs for total protein, albumin, globulin, calcium, phosphate, potassium, sodium, chlorine, alkaline phosphatase, γ-glutamyl transpeptadase, alanine aminotransferase, aspartate aminotransferase, creatinine and urea were established by age- or sex-partitions. Most biochemical markers displayed larger variability and higher dispersion during the periods between 28 days and 1 year old, and included 4–6 age partitions commonly during 1 to Conclusions The age- and sex-specified RIs of 14 biochemical markers in PRINCE study can provide a solid reference, which will be transferred into relevant RIs for other clinical laboratory’s platforms according to the CLSI guidelines.

In this paper, we address single-machine scheduling with sum of logarithm processing times-based learning effect. Under exponential past-sequence-dependent delivery times, we proved that the makespan and total completion time minimizations can be solved by the smallest processing time (SPT) first rule. Under the agreeable weight condition and agreeable due date condition, we show that the total weighted completion time minimization and maximum tardiness minimization can be solved in polynomial time, respectively.

High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability. Besides, under identical conditions of gate oxide thickness and gate voltage, the high-k dielectric enables a greater charge accumulation in the channel region, resulting in a larger number of free electrons available for conduction. However, the lower energy band gap of high-k materials leads to significant leakage currents at the interface with SiC, which greatly affects device reliability. By inserting a layer of SiO2 between the high-k material and SiC, the interfacial barrier can be effectively widened and hence the leakage current will be reduced. In this study, the optimal thickness of the intercalated SiO2 was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed by atomic-layer-deposited Al2O3 layer and thermally nitride SiO2. Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al2O3 stacked on 1-, 2-, 3-, 6-, or 9 nm thick nitride SiO2. Measurement results indicate that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field. Finally, a saturation thickness of stacked SiO2 that contributed to dielectric breakdown and interfacial band offsets was identified. The findings in this paper provides guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.

To analyze the coupled dynamics effects of existing railroad frame bridge structures under the action of traffic, a coupled train-ballast track-suspension bridge girder-soil dynamics model is established based on railroad large system dynamics and finite element theory. The joint ABAQUS-MATLAB simulation, time-varying coupling, and multi-step dynamic iterative solution strategies are introduced to numerically simulate the mechanical properties of existing railroad structures under the coupled effects of wind loads and traffic action. Specifically, (1) a dichotomous method is proposed to investigate the static behavior of the bridge in the bridge-forming state, and the maximum upper arch of the stiffened girder is 3.67 cm, which occurs at about 1/4 and 3/4 positions of the main span, and the lower deflection of the side span is larger, and the maximum lower deflection occurs at 11.04 cm in the span of the 110 m side span. The vertical acceleration in the span increases immediately with the maximum peak of 30 cm/s2, while the lateral acceleration is maintained within 20 cm/s22. (2) The effects of the stiffness of the rail fasteners and the bridge plate support stiffness on the dynamics were studied. (3) The results of the time-domain analysis are in general agreement with the simulation data, except for the error of the ambient vibration background existing at the peak. The correctness of the simulation model is verified.

Zoledronic acid (ZOL) is a potent antiresorptive agent that increases bone mineral density (BMD) and reduces fracture risk in postmenopausal osteoporosis (PMOP). The anti-osteoporotic effect of ZOL is determined by annual BMD measurement. In most cases, bone turnover markers function as early indicators of therapeutic response, but they fail to reflect long-term effects. We used untargeted metabolomics to characterize time-dependent metabolic shifts in response to ZOL and to screen potential therapeutic markers. In addition, bone marrow RNA-seq was performed to support plasma metabolic profiling. Sixty rats were assigned to sham-operated group (SHAM, n = 21) and ovariectomy group (OVX, n = 39) and received sham operation or bilateral ovariectomy, respectively. After modeling and verification, rats in the OVX group were further divided into normal saline group (NS, n = 15) and ZOL group (ZA, n = 18). Three doses of 100 μg/kg ZOL were administrated to the ZA group every 2 weeks to simulate 3-year ZOL therapy in PMOP. An equal volume of saline was administered to the SHAM and NS groups. Plasma samples were collected at five time points for metabolic profiling. At the end of the study, selected rats were euthanatized for bone marrow RNA-seq. A total number of 163 compound were identified as differential metabolites between the ZA and NS groups, including mevalonate, a critical molecule in target pathway of ZOL. In addition, prolyl hydroxyproline (PHP), leucyl hydroxyproline (LHP), 4-vinylphenol sulfate (4-VPS) were identified as differential metabolites throughout the study. Moreover, 4-VPS negatively correlated with increased vertebral BMD after ZOL administration as time-series analysis revealed. Bone marrow RNA-seq showed that the PI3K-AKT signaling pathway was significantly associated with ZOL-mediated changes in expression (adjusted-p = 0.018). In conclusion, mevalonate, PHP, LHP, and 4-VPS are candidate therapeutic markers of ZOL. The pharmacological effect of ZOL likely occurs through inhibition of the PI3K-AKT signaling pathway.

Hypophosphatasia (HPP) is an inherited disease caused by ALPL mutation, resulting in decreased alkaline phosphatase (ALP) activity and damage to bone and tooth mineralization. The clinical symptoms of adult HPP are variable, making diagnosis challenging. This study aims to clarify the clinical and genetic characteristics of HPP in Chinese adults. There were 19 patients, including 1 with childhood-onset and 18 with adult-onset HPP. The median age was 62 (32–74) years and 16 female patients were involved. Common symptoms included musculoskeletal symptoms (12/19), dental problems (8/19), fractures (7/19), and fatigue (6/19). Nine patients (47.4%) were misdiagnosed with osteoporosis and six received anti-resorptive treatment. The average serum ALP level was 29.1 (14–53) U/L and 94.7% (18/19) of patients had ALP levels below 40 U/L. Genetic analysis found 14 ALPL mutations, including three novel mutations—c.511C>G (p.His171Ala), c.782C>A (p.Pro261Gln), and 1399A>G (p.Met467Val). The symptoms of two patients with compound heterozygous mutations were more severe than those with heterozygous mutations. Our study summarized the clinical characteristics of adult HPP patients in the Chinese population, expanded the spectrum of pathogenic mutations, and deepened clinicians’ understanding of this neglected disease.

Mitochondrial diseases (MDs) were a large group multisystem disorders, attributable in part to the dual genomic control. The advent of massively sequencing has improved diagnostic rates and speed, and was increasingly being used as a first-line diagnostic test. Paediatric patients (aged MT-ND6 and POLG; MT-ND5 and RARS2; MT-TL1 and NARS2; MT-CO2 and NDUFS1; MT-CYB and SMARCA2; and CHRNA4 and MT-CO3). Based on the MDC, 15.2% of the patients with mitochondria-related variants were classified as “unlikely to have mitochondrial disorder”. Moreover, 4.5% of the patients with non-mitochondria-related variants and 1.43% with negative genetic tests, were classified as “probably having mitochondrial disorder”. Dual genomic sequencing in suspected MDs provided a more comprehensive and accurate diagnosis for pediatric patients, especially for patients with dual genomic variants.

Magnetism has revolutionized important technologies, and continues to bring forth new phenomena in emergent materials and reduced dimensions. Here, using first-principles calculations, we demonstrate that the already-synthesized two-dimensional (2D) Ni-tetracyanoquinodimethane (Ni2(TCNQ)2) lattice is a stable ferromagnetism material with multiple spin-polarized Dirac cones. The conical bands in proximity of the Fermi level can be tuned by external tensile strain and show the fourfold degenerate electronic states at the critical tensile strain of ∼2.35%, whose energy dispersion is consistent with 2D Cairo pentagonal lattice. In addition, spin-orbital coupling can open a band gap at the Dirac point of A, leading to topologically nontrivial electronic states characterized by the non-zero Chern number and the edge states of nanoribbon. Our results offer versatile platforms for the realization of massless spintronics with full-spin polarization in 2D Cairo pentagonal Ni2(TCNQ)2 Lattice.

Mesenchymal stem cells (MSCs) are multi-potent cells that are able to differentiate and mature into various types of cells under a certain microenvironment for cell therapy and tissue regeneration. Scandium (Sc), an important rare earth element, recently has been intensively investigated in biomedical fields as well as industrial engineering, and chloride channels have been proven to be able to affect osteogenic differentiation. Thus, it is significant to investigate effects of ScCl3 on cell activities of MSCs. In this paper, rat bone MSCs (rBMSCs) were co-cultured with various concentrations of ScCl3 (1 × 10−8, 1 × 10−6, and 1 × 10−4 mol/L) to evaluate their influence on cell proliferation as well as osteogenic and adipogenic differentiation in vitro. The results indicate that ScCl3 promotes the proliferation of rBMSCs initially, which is yet reduced upon ion accumulation. We used immunofluorescence staining, quantitative real time polymerase chain reactions, and assays measuring alkaline phosphatase activity, mineralized deposits, and intracytoplasmic lipids to reveal that rBMSCs treated with ScCl3 at concentrations of 1 × 10−8 –1 × 10−6 mol/L can enhance levels of osteogenic differentiation in a dose-dependent manner and reduce adipogenic differentiation to a certain degree through Wnt/β-catenin signaling pathway. These results indicate that appropriate concentrations of ScCl3 can improve osteogenic differentiation in the lineage commitment of rBMSCs, and thus, promote bone remodeling. This study implies that ScCl3 possesses great potentials in the treatment of bone diseases and would provide new strategy of designing composites by SiCl3 doping for biomedical applications in the future.

In this letter, a sidewall-implanted trench termination for SiC devices is proposed and experimentally demonstrated. With the p-type sidewall region implemented by tilted ion implantation, the electric field crowding at the edge of the main junction can be alleviated. Compared with the conventional trench termination, devices with the fabricated sidewall-implanted trench termination exhibits a higher breakdown voltage (BV) exceeding 1800V, as well as lower leakage current. Moreover, the minimum trench width for over 1800V blocking is significantly reduced from 14μm to 5μm. In addition, the sidewall-implanted trench termination shows stronger robustness as the dominant current path is relocated from the trench sidewall to the whole active region.

Since it was first time proposed, the Space Solar Power Station (SSPS) has attracted great attention all over the world, which is a huge space system and provide energy for Earth. Although several schemes and abundant studies on SSPS have been proposed and conducted, it is still unrealized. The reason why SSPS is still an idea, not only because it is a giant and complex project, but also due to the requirement of various excellent space materials. Among the diverse required materials, we believe energy materials are the most important. Herein, we reviewed the space energy conversion materials for SSPS.

The new generation of Southeast Asian Chinese society, who were locally born and grew up, have largely weakened their interaction with China. However, the growing business opportunities presented from the Belt and Road Initiative (the BRI), which was launched in 2013, serve as a big impetus for the new generation entrepreneurs to reengage China. Drawn upon an empirical case study of the new generation of Malaysian Chinese entrepreneurs, this paper argues that, the entrepreneurs regard institutional embeddedness as a critical channel to enhance their abilities to accumulate transnational social capital and strengthen their socio-economic networks with China. The transnational networks facilitate them to seize business opportunities from the BRI, and simultaneously reinforce their Malaysian national identity. Moreover, this study demonstrates the emergence of knowledge networks in the transnational space. It not only reflects the increasing interests of the new generation entrepreneurship in China's innovation and technology, but also reveals the developmental strategies of both the Malaysian and Chinese states.

This article investigates the reliability issues of silicon carbide (SiC) merged p-i-n Schottky (MPS) diodes. Aiming at the current imbalance issue in surge event and electric field crowding issue under avalanche shock for MPS diodes, plasma spreading layer (PSL) structure is proposed and its performance in alleviating such issues are studied via simulation and experiments. From the simulation, the PSL structure can provide an interconnection between P+ hexagonal islands and P+ rings, and allow bipolar current to spread from the wide P+ region to the other parts of the device during the surge pulse. Under avalanche shock, the PSL structure can relieve the electric field crowding at the corners of the P+ hexagonal island/ring. In both cases, it can relieve the current crowding issue and increase the effective energy dissipating area. It is demonstrated by the experimental results that adding PSL structure can improve both surge and avalanche reliability. Different configurations of PSL (i.e., P+ cross lines and P+ diagonal lines) are studied. The P+ cross-line configuration is proved to have ~20% improvement in surge capability, and the other one achieves ~11% improvement in avalanche capability. The PSL concept can also be applied to optimizing P well/P+ layers in SiC MOSFET for its robustness enhancement.

This article presents the design and fabrication results of the silicon carbide (SiC) super-junction Schottky barrier diode (SBD). The impact of two key device structure parameters, i.e., mesa width (MW) and trench width (TW), on the device forward and reverse performance is studied by numeric simulations and measurements. Furthermore, a simple and efficient termination structure, i.e., wide-trench termination, is proposed to protect the device edge. With this termination, the simulated device breakdown voltage is significantly increased from 1423 to 2600 V with a wide-trench termination width (WTW) larger than $20~\mu \text{m}$ . The outermost MW (OMW) of the transition region is also investigated. It is found that the narrower OMW can mitigate the electric field crowding at the top of the outermost mesa and reduce the electrical stress of the dielectric. Devices with different structural parameters are fabricated and measured. The device with WTW $= 50\,\,\mu \text{m}$ and the optimum OMW demonstrates the highest breakdown voltage of 1920 V. The specific ON-resistance ( ${R}_{{\rm \scriptscriptstyle {ON}},\text {sp}}$ ) of this device is 1.6 $\text{m}\Omega \cdot $ cm2. Subtracting the substrate resistance, the ${R}_{{\rm \scriptscriptstyle {ON}},\text {sp}}$ is only 1.2 $\text{m}\Omega \cdot $ cm2. Such device performance successfully breaks the theoretical 1-D limit of the SiC unipolar device. Furthermore, the leakage current path of the fabricated device is investigated by thermal emission microscope (EMMI). Future improvements to reduce the leakage current are also provided.

With the launching of China’s ambitious Belt and Road Initiative (BRI) in 2013, Chinese diaspora in Southeast Asia have been confronted with both growing business opportunities and emerging challenges. How do ethnic Chinese businesses and their associations respond to the BRI, and by extension, a rising China? How do transnationalism and the nation-states shape their engagement strategies? What are the implications of the Southeast Asian experience for an understanding of diaspora transnationalism? Drawn upon empirical studies conducted in Singapore, Malaysia and the Philippines, and by examining the emergence of the new structural characteristics of Chinese business associations, we argue that these associations have formed institutionalised transnational interactions with China through a variety of mechanisms to facilitate cross-border flows of capital, goods, people, and information. Resultant from various policies instituted by the Southeast Asian states, this economic transnationalism has not led to the dilution of the national identity and political loyalty of ethnic Chinese towards their respective countries. We conclude that the institutionalised transnationalism has operated within a ‘dual embeddedness’ structure in which the state is involved as a key network node in the transnational socio-economic field connecting China and the region. Nanyang Technological University Published version This work was supported by the National Social Science Fund of China [grant number: 16BMZ097; ‘The Interaction Between Diasporic Chinese Entrepreneurs and China’] and by Nanyang Technological University [#04INS000103C430, ‘Plural Coexistence and Asian Sustainability’; and #04INS000132C430, ‘Integrating through Mobility’].

In this work, third-quadrant $I$ – $V$ characterization and surge current tests are carried out on SiC asymmetric-trench MOSFET (DUT A) and SiC double-trench MOSFET (DUT B) under various gate–source biases ( $V_{\mathrm {GS}}$ ). The surge capability is found to be uninfluenced by $V_{\mathrm {GS}}$ for DUT A. However, it has a 71.4% increase when $V_{\mathrm {GS}}$ changes from 0 to −5 V for DUT B. The $I$ – $V$ characteristics in the third quadrant are measured under various $V_{\mathrm {GS}}$ . It is found that the channel is open when the source–drain voltage is >2.5 V for DUT A and >1.5 V for DUT B at $V_{\mathrm {GS}} =0$ V. High-temperature measurements are also conducted from 298 K to 448 K. When $V_{\mathrm {GS}} =0$ V, the channel current takes up to 50% at 10-A source-to-drain current for DUT B, whereas only 10% for DUT A. This could lead to high current/heat density in the channel of DUT B. The transient resistance is also extracted from the surge $I$ – $V$ trajectories, and it is higher for DUT B tested under $V_{\mathrm {GS}} =0$ V, which will increase the dissipated surge energy. Finally, the failure mechanism is analyzed. For DUT A, aluminum melting contributes to the failure at $V_{\mathrm {GS}}= -5$ V and $V_{\mathrm {GS}} =0$ V. For DUT B tested at $V_{\mathrm {GS}} =0$ V, the earlier breakdown happens due to gate oxide failure.

Guan-Nan He, Na-Ren Bao, Shuang Wang, Man Xi, Tian-Hao Zhang, Feng-Shou Chen Department of Anesthesiology, First Affiliated Hospital, China Medical University, Shenyang, 110001, Liaoning, People’s Republic of ChinaCorrespondence: Feng-Shou ChenDepartment of Anesthesiology, First Affiliated Hospital, China Medical University, Shenyang, 110001, Liaoning, People’s Republic of ChinaEmail shouyongpang4540@163.comBackground: Liver cancer ranks the top four malignant cancer type worldwide, which needs effective and safe treatment. Ferroptosis is a novel form of regulated cell death driven by iron-dependent lipid peroxidation and has been regarded as a promising therapeutic target for cancers. In this work, we aimed to study the effects of anesthetic ketamine on proliferation and ferroptosis of liver cancer.Methods: Cell viability and proliferation were detected by cell counting kit 8 (CCK-8), colony formation, and 5-ethynyl-2′-deoxyuridine (EdU) assay. Ferroptosis was determined by levels of Fe2+, lipid reactive oxygen species (ROS), and malondialdehyde (MDA). RNA levels of lncPVT1, miR-214-3p, and glutathione peroxidase 4 (GPX4) were checked by real-time PCR assay. Clinical liver tumor samples were collected to detect the levels of long noncoding RNA lncPVT1, miR-214-3p, and GPX4, and their correlation was evaluated by Pearson comparison test. Luciferase reporter gene assay and RNA pulldown were conducted to determine the binding between lncPVT1, miR-214-3p, and GPX4 3ʹUTR.Results: Ketamine significantly suppressed viability and proliferation of liver cancer cells both in vitro and in vivo, as well as stimulated ferroptosis, along with decreased expression of lncPVT1 and GPX4. LncPVT1 directly interacted with miR-214-3p to impede its role as a sponge of GPX4. Depletion of lncPVT1 accelerated the ferroptosis of live cancer cells, whereas miR-214-3p inhibition and GPX4 overexpression reversed this effect. Ketamine-induced cell growth suppression and ferroptosis were also suppressed by miR-214-3p inhibition and GPX4 overexpression.Conclusion: In this work, we determined that ketamine suppressed viability of liver cancer cells and induced ferroptosis and identified the possible regulatory mechanism of lncPVT1/miR-214-3p/GPX4 axis.Keywords: liver cancer, ketamine, lncPVT1, miR-214-3p, GPX4

Two-dimensional van der Waals magnetic atomic crystals have provided unprecedented access to magnetic ground states due to a quantum confinement effect. Here, using first-principles calculations, we demonstrate a spin-gapless molecular ferromagnet, namely, Fe2(TCNQ)2, with superior mechanical stability and a remarkable linear Dirac cone, which can be exfoliated from its already-synthesized van der Waals crystal. Especially, Young's modulus has values of 175.28 GPa·nm along the x- and y-directions with a Poisson's ratio of 0.29, while the Curie temperature within the Ising model is considerably higher than room temperature. Furthermore, spin-orbit coupling can open a band gap at the Dirac point, leading to topologically nontrivial electronic states characterized by an integer value of the Chern number and the edge states of its nanoribbon. Our results offer versatile platforms for achieving plastic spin filtering or a quantum anomalous Hall effect with promising applications in spintronics devices.

In this work, the influence of JFET region width on device’s performance and avalanche reliability is studied on 1200 V planar-gate silicon carbide (SiC) MOSFETs fabricated on a 4-in SiC wafer. Unclamped inductive switching (UIS) test is conducted to compare the devices under tests (DUTs) avalanche capability at both ${V}_{\text {GS}} ={0}$ V and ${V}_{\text {GS}} = -5$ V. At ${V}_{\text {GS}} ={0}$ V, the best avalanche reliability is achieved with a JFET region width of ${4}~\mu \text{m}$ . Through mix-mode TCAD simulation, channel conduction is found to contribute to the failure at ${V}_{\text {GS}} ={0}$ V. While at ${V}_{\text {GS}} =-5$ V, the best avalanche reliability is achieved with a JFET region width ranging from 2 to ${3}~\mu \text{m}$ . Hole injection is observed in the test and recognized in simulation, which critically influences the DUTs’ avalanche reliability at ${V}_{\text {GS}} = -5$ V.

Nurses frequently face stressful situations during work, which makes resilience an essential quality of their personality to cope with professional stress and to prevent burnout. Resilience can be improved by training and practice. To analyze the effect of resilience training in nurses, studies reporting the changes in resilience before and after resilience training were identified by conducting the literature search in electronic databases. Meta-analyses of standardized mean differences (SMDs) between postintervention and preintervention scores of resilience and other related variables were performed. Thirteen studies (576 nurse participants) were included. Resilience training improved the resilience scores of the participants (SMD, 0.58; 95% confidence interval [CI], 0.23-0.94; P = .001), whereas there was no improvement in the resilience scores of nurses who did not participate in resilience training (SMD, -0.13; 95% CI, -0.54 to 0.27; P = .523). The stress (SMD, -0.60; 95% CI, -0.80 to -0.40; P < .00001), anxiety (SMD, -0.50; 95% CI, -0.80 to -0.20; P = .001), depression (SMD, -0.43; 95% CI, -0.67 to -0.19; P < .0001), and burnout (SMD, -1.01; 95% CI, -1.25 to -0.76; P

In this work, CeO2 nanocrystal-decorated TiO2 nanobelt for forming a CeO2@TiO2 heterostructure. CeO2 plays a dual role in improving photocatalytic activity, not only by promoting the separation and transfer of photogenerated charge carriers, but also by increasing visible light absorption of the photocatalyst as a photosensitizer. The as-prepared CeO2@TiO2 heterostructure demonstrates the performance of organic degradation and H2 production (about 17 μmol/h/g, which is about 2.5 times higher than that of pure TiO2 nanobelts). Our work provides a facile and controllable synthesis method for high performance photocatalyst, which will have potential applications in synthesis clean/solar fuel, and photocatalytic water treatment.

For the termination in high-voltage SiC thyristor, this article proposes a single-mask implantation-free solution named aperture density modulation technique. Using this technique, the etching profile on the epitaxial layer can be controlled by the aperture layout on the mask. Thus, it can directly form the smoothly tapered junction termination extension with customizable slope profile. The experiments confirm this control ability on profiles with the extension length from 200 to 400 ${\mu } \text{m}$ . The fabricated devices with the blocking voltage near 8 kV (~80%) demonstrate the feasibility as a termination technique. The numerical simulations present the potential to maintain this breakdown voltage within 120 ${\mu } \text{m}$ . Therefore, a low-cost solution for high-voltage termination in SiC bipolar devices is expected using this technique.

For horizontal-axis wind turbines, wind turbines typically alignment nacelle to the wind using yaw system, realizing max energy capture. If the wind turbine’s nacelle has a large error to the wind, the captured wind energy loss will be large, and it will also cause an increase in the load of the unit, which will pose a major risk to the safety of the wind turbine. Affecting the wind measurement error in addition to the performance of the sensor itself, the installation position of the wind measurement equipment also accounts for an important factor, this paper on the basis of the calculation of fluid dynamics simulation results, through the lateral and longitudinal comparison of the simulation results, pointed out the best installation location of the wind direction sensor, optimize the loss caused by wind measurement error of wind turbine in design, and provide guidance for the installation of the wind direction sensor on site.