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This study aimed to determine the effect of a commercial diet's protein level on the fry-to-fingerling stage. Thirty days-old fries having the initial length and weight of 18.25 ± 0.15 mm fish-1 and 0.036 ± 0.50 g fish-1 respectively have been used in this study. Diet having three protein levels i.e. 30% (trial 1 as control), 35% (trial 2), 40% (trial 3), and 45% (trial 4), respectively, have been used to evaluate the effect of protein, and each trial has been repeated three times. During the study, stocking density was allocated to 1000 fish per composite tank with a volume of 1 m3. After 30 days of rearing, the weight of fingerlings in trial 1 reached up to 1.50 ± 0.02 g fish-1 and it was recorded as 1.52 ± 0.01g for trial 2, these two were lower than that of trials 3 and 4, where fingerling weight was reported 1.69 ± 0.01 and 1.58g fish-1 respectively and obtained the best weight compared to others. The length of fingerlings at the end of the experimental period was also changed in different trials and it was recorded 47.12; 46.92; 50.97; and 48.89 mm fish-1 for trail 1, 2, 3, and 4 respectively, among the tested combinations lower fingerlings length was recorded for trial 2 (35% CP), but it is not significantly different for trial 1 and 2 and a significant difference (P < 0.05) was reported for trail 2, 3, and 4. The survival rate of fingerlings ranged from 67.27 to 72.33%. Meanwhile, the herd distribution coefficient variation (CVW) in the treatment using 40% protein (trial 3) was the highest at 72.33% (p < 0.05). The results of the study can be concluded that the level of protein has a significant effect on the various growth parameters of fingerlings.

Today, the development of the Internet and social networks has changed the lives of human beings. The ability of these technologies to connect people in real-time expands the influence of some people in the community. Therefore, this study is conducted to test whether customers change purchasing behavior in online environments under the impact of those influencers by using Technology Acceptance Model (TAM). The study conducted a survey of 503 Vietnameses on Google Form from November 2020 to mid-January 2021. The collected data were analyzed using AMOS 24 with CB-SEM analysis method. The results showed a positive relationship between influencers and customers’ online purchasing behavior. More specifically, customers are more likely to buy online if they trust influencers and their advertisements. This is the most influential factor among the three influencer traits (as source credibility): trustworthiness, expertise, and attractiveness. A remarkable point in this study is that Vietnamese people are more concerned with perceived ease of use when buying online than other factors in the TAM model. This is the basis for businesses to implement influencer marketing strategies and improve the competitiveness of their online business.

This article is devoted to the analysis of the confession of Raskolnikov, the main character of F.M. Dostoevsky's novel "Crime and Punishment", from the point of view of Buddhism. It is determined that Raskolnikov in the novel is depicted as an intelligent, sympathetic, well-educated, compassionate young man with a promising future, but he commits murder. The main purpose of this study is to review Raskolnikov's mental state before and after the crime in order to assess the contrast between his seemingly happy life and his heinous crime. The second intention is to demonstrate that Sonya is Raskolnikov's karma, in her role as a prostitute who voluntarily followed him to prison in order to get to the essence of his personality, since she is an external projection of the killer's karma that needs to be led and punished.

International audience; In this work, measurements from cathodo-luminescence (CL), micro-Raman spectroscopy and currentvoltage I(V) have been coupled to assess the effects of physical parameters such as threading dislocations and effective doping level homogeneity on the electrical performances of vertical GaN Schottky diodes.

In this paper, the mineralogical and geochemical characteristics of amphiboles and plagioclases of granitoids from the Nam Rom and Song Ma massifs have been investigated to understand their formation conditions. The Nam Rom amphibole and plagioclase are subhedral to euhedral fine- to medium-grained crystals. Whereas, the Song Ma amphibole and plagioclase are anhedral to subhedral fine-grained crystals. Geochemical compositions of amphiboles suggest that Nam Rom and Song Ma amphiboles are edenite and ferro-edenite, respectively. Nam Rom edenite has higher contents of basic constituents (Mg and Ca) and lower contents of felsic constituents (Na and K) compared with the Song Ma ferro-edenite. On the other hand, Si-(Na+K) and Si-Ca apfu ratios of the Nam Rom edenite and the Song Ma ferro-edenite and Al/(Na+K)-Al/(Ca+Na+K) atom per formula unit (apfu) ratios of the Nam Rom edenite and andesine and the Song Ma ferro-edenite, andesine and oligoclase are similar. Formation conditions of the Nam Rom and Song Ma granitoids were calculated using amphibole-plagioclase geobarometer. The Nam Rom granitoid was formed at 3.07-5.32 kbar (10.1-17.6 km under paleo-surface) and 750-785°C. The Song Ma granitoid was formed at 1.04-3.08 kbar (3.4-10.2 km under paleo-surface) and 715-745°C. Therefore, Nam Rom and Song Ma granitoids are thought to be crystallized from the same magma. The former was formed from the immature and more basic stage of magma; the latter was formed from the mature and more felsic stage of magma.

International audience

This paper proposes a compact automatic system, which could be installed easily on vehicles, to detect and send warnings if pupils are accidentally left on school buses. The detection and identification method is mainly based on MobileNets - the new structure of convolutional neural networks. The information is then fed to an embedded processing module and alarms are provided to relevant people via sound, text messages, phone-calls and/or emails in order to avoid unfortunate consequences. The device is tested on a real bus to show the efficiency and safety with various situations.

Objective: To evaluate the results of root canal obturation with Wave One (WO) canal shaping system and Gutta Thermafil obturation system. Design: Nonrandomized prospective experimental trial between December 2020 and March 2021. Setting: Central Military Hospital 108. Subject: 30 lower incisors extracted teeth without stem rupture, without root damage such as fracture, stray, fissure. Results: The number of slices with the biggest gaps accounting for 16.7%. The number of slices with the smallest gaps accounting for 10%. The number of slices with gaps over the total slices accounted for 14.4%. The void area in the apical slice was 1,413 ± 519.5 µm2 and the largest void area was 38,654.2 ± 3,939.8 µm2. Conclusion: Thermafil Gutta Percha has a good fit to the canal wall, which can seal the canal more easily and accurately.

ORAL; International audience; This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). AlN films on Si substrate were grown using Metalorganic Vapor Phase Epitaxy (MOVPE) technique. SCM and SSRM measurements evidence a p-type conductive channel as well as a pn-junction beneath the AlN/Si interface. The diffusion depths of Al and Ga atoms obtained by Secondary Ion Mass Spectroscopy (SIMS) are in good agreement with those deduced from SCM and SSRM. Sample grown at lower temperature (1000°C) exhibits a conductive channel and a junction over a shallow depth explaining its lower propagation losses in comparison with those synthesized at higher temperature (1150°C). Thus, monitoring the dopant diffusion beneath the AlN/Si interface is crucial to achieve efficient GaN-on-Si microwave power devices.

International audience; GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN HEMTs using thick and thin GaN channels in comparison with GaN-on-Si HEMTs using a similar thin epi-design.

International audience; AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves frequencies, which are critical for efficient devices and circuits. AlN/Si structures are grown by Metalorganic Vapor Phase Epitaxy. Acceptor dopant in-diffusion (Al and Ga) into the Si substrate is studied by Secondary Ion Mass Spectroscopy and is mainly located in the first 200 nm beneath the interface. In this region, an acceptor concentration of a few 1018cm-3 is estimated from Capacitance-Voltage (C-V) measurements while the volume hole concentration of several 1017 cm-3 is deduced from sheet resistance. Furthermore, the combination of scanning capacitance microscopy and scanning spreading resistance microscopy enables the 2D profiling of both the p-type conductive channel and the space charge region beneath the AlN/Si interface. We demonstrate that samples grown at lower temperature exhibit a p-doped conductive channel over a shallower depth which explains lower propagation losses in comparison with those synthesized at higher temperature. Our work highlights that this p-type channel can increase the propagation losses in the high-frequency devices but also that a memory effect associated with the previous sample growths with GaN can noticeably affect the physical properties in absence of proper reactor preparation. Hence, monitoring the acceptor dopant in-diffusion beneath the AlN/Si interface is crucial for achieving efficient GaN-on-Si microwave power devices.

Pigmented spore-forming bacterial strains were isolated from the gastrointestinal tracts of chickens for screening for heat-stable carotenoid-producing strains that could be applied as feed supplements. Of the seven heat-stable pigmented isolates screened, only two, yellow Sporosarcina saromensis CH1 and red-orange Bacillus aquimaris CH9, produced pigments with typical carotenoid absorbance peaks (400–500 nm). The CH9 carotenoids exhibited higher scavenging activity (73.2%) of DPPH free radicals than the CH1 carotenoids (35.9%) and carotenoids of the reference B. indicus HU36 strain (78.4%), in comparison to 100% activity of acid ascorbic at 18.75 M as the standard. The CH9 strain produced high levels of carotenoids (439 g [g DW]-1) and formed nearly 100% spores, whereas the CH1 strain produced low levels of carotenoids (92 g [g DW]-1) and only achieved 30% sporulation. Chromatographic and spectral profiles of the carotenoids found in CH9 indicated the presence of as many as 11 different carotenoid types closely related to 1-HO-demethylspheroidene and keto/hydroxyl derivatives of  carotene. We successfully produced concentrated orange CH9 spore powder at a high concentration of 6.1 × 1011 CFU g-1; these spores were much more heat-stable (66% survival at 80°C for 20 min) than the reference B. indicus HU36 spores (9% survival at 50°C for 20 min). In conclusion, B. aquimaris CH9 is a promising probiotic carotenoid-producing strain, with heat-stable spores that should withstand the heat-treatment processing required for feed and food supplement production.

The Song Hien rift basin is considered to be one of the most important regions of gold mineralisation in North East Vietnam. A number of gold deposits in the Song Hien rift basin are hosted in Triassic and Devonian sedimentary formations of the basin. The largest among them are the Bo Va, Tham Riem and Khung Khoang deposits. The Bo Va deposit is hosted in carbonaceous sedimentary rocks of Triassic age, whereas the Tham Riem and Khung Khoang deposits are hosted in carbonaceous sedimentary rocks of Devonian ages. Based on the mineral composition of the ores, the deposits can be divided into to two types: (i) pyrite dominated and (ii) pyrite-arsenopyrite dominated. The Khung Khoang is of the first type and the Bo Va and Tham Riem deposits belong to the second type. The isotopic composition of pyrite and arsenopyrite in the Tham Riem deposit however, is close to that for the ores of the Bo Va deposit. The δ 34 S value for pyrite ranging from −3.7‰ to −7.4‰ and for arsenopyrite ranging from −3.2‰ to 7.4‰. The δ 34 S of pyrite in the ore from the Khung Khoang deposit however, has a much heavier isotopic composition of +18.9 to +20.2‰. A narrow range of the variation of sulfur isotopic composition of pyrite and arsenopyrite, the presence of visible gold as inclusions, the presence of chalcopyrite, sphalerite and other inclusions in arsenopyrite and pyrite, the large size of the grains of major ore minerals allow us to assume that the primary gold ores of the Bo Va and Tham Riem deposits underwent metamorphic transformations. The absence of arsenic, antimony, mercury and other characteristic elements in the ores of the Khung Khoang deposit, and substantially heavier isotopic composition of sulfur similar to the sulfur isotopic composition of marine sulfates in the Devonian, allow us to assume another source of the ore components, not connected with the Triassic sedimentary rocks of the Song Hien rift.

International audience; Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic silicon substrate having initial resistivity superior to 5 kΩ cm enables the metalorganic vapor phase epitaxy of GaN buffer layers with propagation losses below 0.4 dB mm À1 at 40 GHz and 0.5 dB mm À1 at 67 GHz. On the other hand, an HEMT heterostructure is grown on 1.5 μm-thick 3C-SiC on 4 off-axis silicon substrate having an initial resistivity superior to 200 Ω cm that allows to keep a sufficiently resistive epilayer stack limiting the loss up to 0.78 dB mm À1 at 40 GHz. Device process developed on a piece of the 100 mm diameter wafer leads to the demonstration of DC transistor operation with low leakage currents. Compared with direct growth on silicon, these templates enable reduced radio frequency (RF) propagation losses that are very interesting for high-frequency transistors and circuits operation.

In this paper, we report on the fabrication of a normally-off Al(Ga)N/GaN high electron mobility transistor with selective area sublimation under vacuum of the p type doped GaN cap layer. This soft method makes it possible to avoid damages otherwise induced by post processing with reactive ion etching techniques. The GaN evaporation selectivity is demonstrated on AlN as well as on AlGaN barrier layers. Furthermore, by properly choosing the AlGaN barrier thickness and composition it is possible to co-integrate a normally-off with a normally-on device on the same substrate. Finally, a local area regrowth of AlGaN can complement this process to increase the maximum drain current in the transistors.

International audience; We investigate the optical properties of porous GaN films of different porosities, focusing on the behaviors of the excitonic features in time-integrated and time-resolved photoluminescence. A substantial enhancement of both excitonic emission intensity and recombination rate, along with insignificant intensity weakening under temperature rise, is observed in the porous GaN films. These observations are in line with (i) the local concentration of electric field at GaN nanoparticles and pores due to the depolarization effect, (ii) the efficient light extraction from the nanoparticles. Besides, the porosification enlarges the surface of the air/semiconductor interface, which further promotes the extraction efficiency and suppresses non-radiative recombination channels. Our findings open a way to increasing the emission efficiency of nanophotonic devices based on porous GaN.

In this work, we analyse the microstructure and local chemical composition of green-emitting InxGa1-xN/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.18 indium are discussed. The local indium composition is quantitatively evaluated by comparing scanning transmission electron microscopy (STEM) images to simulations and the local indium concentration is extracted from intensity measurements. The calculations point out that the measured indium fluctuations may be correlated to the large width and intensity decrease of the PL emission peak.

In this work, we analyse the microstructure and local chemical composition of green-emitting InxGa1-xN/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.18 indium are discussed. The local indium composition is quantitatively evaluated by comparing scanning transmission electron microscopy (STEM) images to simulations and the local indium concentration is extracted from intensity measurements. The calculations point out that the measured indium fluctuations may be correlated to the large width and intensity decrease of the PL emission peak.

Non renseigné; Ce travail de doctorat est dédié à l’étude des mécanismes régissant l’interaction lumière-matière dans des dispositifs optoélectroniques à base d’alliages (Al,Ga,In,)N. Diverses compositions de ces alliages sont assemblées en structures multicouches de matériaux d’épaisseurs nanométriques afin d’obtenir une émission à plus grande longueur d’onde que le bleu, couleur pour laquelle la technologie est mature depuis plus de vingt ans. Il s’agit de réaliser des émetteurs efficaces de lumière jaune, verte ou blanche (avec une approche alternative au pompage optique de luminophore par une diode bleue). Les solutions solides assemblées pour obtenir des émissions à grandes longueur d’onde sont à base de GaN et de Ga0.8In0.2N, matériaux pour lesquels les mailles cristallographiques sont désaccordées. Lorsqu’elles sont déposées sur un substrat ou un pseudo-substrat de GaN, matériau pour lequel les dopages n et p sont maitrisés et permettent l’injection électrique des porteurs, les tranches de Ga0.8In0.2N subissent de très fortes compressions dans leur plan de croissance et l’énergie élastique est relaxée par la formation de défauts délétères pour le rendement lumineux. Nous avons construit des hétéro-structures plus complexes en intercalant une couche complémentaire d’Al0.2Ga0.8N afin de réduire la densité d’énergie élastique globale. L’insertion de telles couches améliore la qualité cristalline et augmente leur rendement optique. Nous avons mesuré le rendement quantique interne en utilisant la spectroscopie de photoluminescence résolue en temps et une analyse des temps de déclins par une approche de type Lotka-Volterra des équations de recombinaison pour obtenir les taux de recombinaisons radiatifs et non-radiatifs. Nous avons montré quantitativement comment les champs électriques internes résultant du contraste de polarisation électrique aux interfaces et les recombinaisons non-radiatives de type Schockley-Read-Hall contribuent à définir le rendement quantique à faible densité d’excitations (optique ou électrique). L’objectif est l’obtention d’une émission spontanée intense pour une densité d’excitation modérée. Nous avons donc conduit une campagne d’expériences en variant l’intensité d’injection. Nous avons montré que l’effet Auger est le facteur dominant régissant la chute du rendement quantique interne sous fortes densités d’injection. Nous avons étudié diverses architectures à simple puits quantique ou à puits quantiques multiples émettant à des longueurs d’onde identiques pour quantifier l’influence spécifique de l’effet Stark confiné quantique. Nous avons corrélé l’apparition d’un seuil d’excitation au-delà duquel domine la recombinaison non-radiative de type Auger avec l’augmentation du temps de recombinaison radiative et de l’énergie de localisation des porteurs dans l’alliage inhomogène. Nous arrivons à la conclusion que la localisation des porteurs produite par le champ électrique aux interfaces et les fluctuations de la composition chimique de Ga0.8In0.2N contribuent de concert, facilitant l’interaction répulsive électron-électron et la recombinaison non-radiative Auger nnp. Nous avons montré que le modèle ABC permet de bien décrire la physique du phénomène si ses trois paramètres tiennent compte des effets d’écrantages sous injections modérées et des effets de remplissage de l’espace des phases sous fortes injections. Enfin, nous nous sommes écartés de l’étude des structures traditionnellement épitaxiées selon le plan polaire (0001) pour choisir des plans d’épitaxie semi-polaire (11-22). Dans ces conditions, il a été nécessaire de fabriquer des puits quantiques en Ga0.65In0.35N. Nous avons montré que la quasi-absence d’effet Stark confiné quantique augmente de manière très significative le seuil d’excitation au-delà duquel domine la recombinaison non-radiative de type Auger. Cette amélioration par rapport aux échantillons épitaxiés selon le plan (0001) est d’autant plus marquée que la longueur d’onde émise est grande.

Non renseigné; Ce travail de doctorat est dédié à l’étude des mécanismes régissant l’interaction lumière-matière dans des dispositifs optoélectroniques à base d’alliages (Al,Ga,In,)N. Diverses compositions de ces alliages sont assemblées en structures multicouches de matériaux d’épaisseurs nanométriques afin d’obtenir une émission à plus grande longueur d’onde que le bleu, couleur pour laquelle la technologie est mature depuis plus de vingt ans. Il s’agit de réaliser des émetteurs efficaces de lumière jaune, verte ou blanche (avec une approche alternative au pompage optique de luminophore par une diode bleue). Les solutions solides assemblées pour obtenir des émissions à grandes longueur d’onde sont à base de GaN et de Ga0.8In0.2N, matériaux pour lesquels les mailles cristallographiques sont désaccordées. Lorsqu’elles sont déposées sur un substrat ou un pseudo-substrat de GaN, matériau pour lequel les dopages n et p sont maitrisés et permettent l’injection électrique des porteurs, les tranches de Ga0.8In0.2N subissent de très fortes compressions dans leur plan de croissance et l’énergie élastique est relaxée par la formation de défauts délétères pour le rendement lumineux. Nous avons construit des hétéro-structures plus complexes en intercalant une couche complémentaire d’Al0.2Ga0.8N afin de réduire la densité d’énergie élastique globale. L’insertion de telles couches améliore la qualité cristalline et augmente leur rendement optique. Nous avons mesuré le rendement quantique interne en utilisant la spectroscopie de photoluminescence résolue en temps et une analyse des temps de déclins par une approche de type Lotka-Volterra des équations de recombinaison pour obtenir les taux de recombinaisons radiatifs et non-radiatifs. Nous avons montré quantitativement comment les champs électriques internes résultant du contraste de polarisation électrique aux interfaces et les recombinaisons non-radiatives de type Schockley-Read-Hall contribuent à définir le rendement quantique à faible densité d’excitations (optique ou électrique). L’objectif est l’obtention d’une émission spontanée intense pour une densité d’excitation modérée. Nous avons donc conduit une campagne d’expériences en variant l’intensité d’injection. Nous avons montré que l’effet Auger est le facteur dominant régissant la chute du rendement quantique interne sous fortes densités d’injection. Nous avons étudié diverses architectures à simple puits quantique ou à puits quantiques multiples émettant à des longueurs d’onde identiques pour quantifier l’influence spécifique de l’effet Stark confiné quantique. Nous avons corrélé l’apparition d’un seuil d’excitation au-delà duquel domine la recombinaison non-radiative de type Auger avec l’augmentation du temps de recombinaison radiative et de l’énergie de localisation des porteurs dans l’alliage inhomogène. Nous arrivons à la conclusion que la localisation des porteurs produite par le champ électrique aux interfaces et les fluctuations de la composition chimique de Ga0.8In0.2N contribuent de concert, facilitant l’interaction répulsive électron-électron et la recombinaison non-radiative Auger nnp. Nous avons montré que le modèle ABC permet de bien décrire la physique du phénomène si ses trois paramètres tiennent compte des effets d’écrantages sous injections modérées et des effets de remplissage de l’espace des phases sous fortes injections. Enfin, nous nous sommes écartés de l’étude des structures traditionnellement épitaxiées selon le plan polaire (0001) pour choisir des plans d’épitaxie semi-polaire (11-22). Dans ces conditions, il a été nécessaire de fabriquer des puits quantiques en Ga0.65In0.35N. Nous avons montré que la quasi-absence d’effet Stark confiné quantique augmente de manière très significative le seuil d’excitation au-delà duquel domine la recombinaison non-radiative de type Auger. Cette amélioration par rapport aux échantillons épitaxiés selon le plan (0001) est d’autant plus marquée que la longueur d’onde émise est grande.

Utilization of multiple putatively neutral DNA markers for inferring evolutionary history of species population is considered to be the most robust approach. Molecular population genetic studies have been conducted in many species of Anopheles genus, but studies based on single nucleotide polymorphism (SNP) data are still very scarce. Anopheles minimus is one of the principal malaria vectors of Southeast (SE) Asia including the Northeastern (NE) India. Although population genetic studies with mitochondrial genetic variation data have been utilized to infer phylogeography of the SE Asian populations of this species, limited information on the population structure and demography of Indian An. minimus is available. We herewith have developed multilocus nuclear genetic approach with SNP markers located in X chromosome of An. minimus in eight Indian and two SE Asian population samples (121 individual mosquitoes in total) to infer population history and test several hypotheses on the phylogeography of this species. While the Thai population sample of An. minimus presented the highest nucleotide diversity, majority of the Indian samples were also fairly diverse. In general, An. minimus populations were moderately substructured in the distribution range covering SE Asia and NE India, largely falling under three distinct genetic clusters. Moreover, demographic expansion events could be detected in the majority of the presently studied populations of An. minimus. Additional DNA sequencing of the mitochondrial COII region in a subset of the samples (40 individual mosquitoes) corroborated the existing hypothesis of Indian An. minimus falling under the earlier reported mitochondrial lineage B.

The research aimed to investigate for lagoon foodweb and dietary composition for rabbitfish in different stages (larvae, fingerlings and grower). Data were collected from two experiments using basic methods in field and laboratory. Experiments were structured on 2,000 larval head, 500 each tanks for nursery and 90 heads of three groups were collected in different seasons to laboratories for analysis of feeding intake and food compositions. Results showed that the number of omnivorous species, including animals, plants and organics, have been identified and grouped in 39 genera, 30 families, 23 sets, 8 classes and 6 branches. Animal groups have been identified as 18 breeds, 18 families, 13 lines, 3 classes and 3 animal species of industry animal. Plant foodweb, mainly Bacillariophyta, have accounted for 27 genera and 67.5% of total expenditure vegetation eaten by the rabbitfish. For the animal feed industry joint foot, Arthropoda have the highest number of 15 varieties, accounting for 83.3% of the animal’s nutritional ratio. Organic residues as food for species have the highest prevalence in digestive tract (94.4%). The dominant food groups were determined as 15 genera and 5 animal breeds, particularly those large groups of algae.

The human liver fluke Opisthorchis viverrini is endemic in Thailand, Laos and Cambodia where long standing infection is associated with cancer of the bile ducts, cholangiocarcinoma. Here we describe a cathepsin D-like aspartic protease from the gut and other tissues in O. viverrini. Phylogenetic analysis indicated that Ov-APR-1 is cathepsin D-like, conforming with Clan AA, Family A1 of the MEROPS classification. Ov-APR-1 is expressed in the gut of the mature hermaphroditic parasite, in the reproductive tissues including the testis and immature spermatids, and the developing miracidium within the eggshell. The enzyme was also detected in the excretory/secretory products of cultured adult flukes, indicating a role in host-parasite relationships. A recombinant form of the enzyme expressed in Escherichia coli and refolded from denatured inclusion bodies underwent autocatalytic activation and demonstrated hydrolytic activity against the peptide substrate 7-methoxycoumarin-4-acetyl-GKPILFFRLK(DNP)-D-Arg-amide with a k(cat)/K(m)=1.7 x 10(4)M(-1)s(-1) and a pH optimum around pH 2.5-3.0. The recombinant enzyme digested hemoglobin and bovine serum albumin. Forty-six serum albumin peptides were detected after digestion with recombinant Ov-APR-1 and sequenced. Like many other aspartic proteases, Ov-APR-1 displayed promiscuous preferences for residues accommodated at the key subsites of the binding pocket although hydrophobic (Leu, Ala, Ile), positively charged (Lys) and bulky aromatic (Phe) residues, in that order, were preferred at P1. Similar residues were accommodated at P1' although even less selectivity was exerted at this position.

In mobile base station antennas, linear array antennas are employing and asymmetrical radiation patterns are achieved. For multi frequency use, unequally spaced array configurations are preferable because of reducing grating lobes in higher frequency operations. Previously, radiation pattern synthesis methods were developed for equally spaced array configurations. In radiation pattern synthesis method, the least mean square (LMS) method was very conveniently used in mobile base station designing. The convenience of this method is obtaining array excitation coefficients by simply giving the objective radiation pattern. Moreover, the merit of this method is having the function of emphasizing design importance in the radiation angles that is called the weighting matrix. In this paper, a radiation pattern synthesis program based on LMS scheme is developed for unequally spaced array configuration. As an initial step, the accuracies of a developed program are examined. Through designing actual asymmetric radiation pattern with very low side lobe levels, the accuracies of program and effects of weighting matrix are ensured.

In this paper, the authors propose 2 structures of UWB antennas: one operates as a magnetic dipole with the size of 15 mm × 26 mm × 1.6 mm and the other operates as an electric dipole with the size of 9 mm × 64 mm × 1.6 mm. The proposed antennas can work in the frequency band 3.1–10.6 GHz with VSWR ≤ 2. They also can be used in MIMO system to reduce the mutual coupling between antenna elements.

Development of insecticide resistance (IR) in mosquito vectors is a primary huddle to malaria control program. Since IR has genetic basis, and genes constantly evolve with response to environment for adaptation to organisms, it is important to know evolutionary pattern of genes conferring IR in malaria vectors. The mosquito Anopheles minimus is a major malaria vector of the Southeast (SE) Asia and India and is susceptible to all insecticides, and thus of interest to know if natural selection has shaped variations in the gene conferring IR. If not, the DNA fragment of such a gene could be used to infer population structure and demography of this species of malaria vector. We have therefore sequenced a ~569 bp DNA segment of the NADPH cytochrome P450 reductase (CPR) gene (widely known to confer IR) in 123 individuals of An. minimus collected in 10 different locations (eight Indian, one Thai and one Vietnamese). Two Indian population samples were completely mono-morphic in the CPR gene. In general, low genetic diversity was found with no evidence of natural selection in this gene. The data were therefore analyzed to infer population structure and demography of this species. The 10 populations could be genetically differentiated into four different groups; the samples from Thailand and Vietnam contained high nucleotide diversity. All the 10 populations conform to demographic equilibrium model with signature of past population expansion in four populations. The results in general indicate that the An. minimus mosquitoes sampled in the two SE Asian localities contain several genetic characteristics of being parts of the ancestral population.