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Ion beam sputtering, known as potential technique for producing nanoripple on various surfaces having wide range of applications. Along with nanoripple, triangular features are also superimposed, limiting their use for some potential applications. Here we are reporting evolution of triangular features on Ge (100) surfaces under low energy (300–1000 eV) Xe ion irradiation at room temperature for angles of incidence (61°–80°) and ion fluences of (5.34 × 1017−8.01 × 1018 ions cm−2). Triangular features appear with the onset of ripple formation and disappear when the ripple periodicity is lost. These features formation depend not only on material but also depend on the ratio of the ion/target mass. In comparison with numerical simulations based on modified anisotropic Kuramoto-Sivanshinsky equation, we find good agreement for the evolution of base angle and lateral length for the triangular features with ion incidence angle. The dynamics of triangular feature with ion incidence angle and ion fluence have been reported. Ion-incidence angle dependency is adequately replicated in numerical simulations. Experimentally the base angle and lateral length increases with increase in ion incidence angle, similar trend is observed in numerical simulation.