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Three new lanostane triterpenoids (1-3) along with two new amides fatty compounds (4-5) were isolated from the ethyl acetate extract of a culture of the endophytic fungus Alternaria sp. gx-2. Their structures were identified by 1D and 2D NMR spectral data and HRESIMS. Compounds 1-12 were evaluated for their anti-inflammatory and tyrosinase inhibition activities. The isolated compounds did not show inhibitory activities at a concentration of 100 μM against tyrosinase, while under the concentration of 10 μM, the release of lactate dehydrogenase (LDH) inhibition rate of compound 1 was 54.45%, indicating that compound 1 had moderate anti-inflammatory activity on the activation of NLRP3 inflammasome.

Two new compounds verboncin A (1) and verboncin B (4) and 14 known compounds (2–3 and 5–16) were isolated from Verbena bonariensis, and these 14 compounds were first obtained from this plant. Their chemical structures were established by one and two-dimensional NMR and HRESIMS analysis and the results were compared with literature values. The absolute configuration of 1 was determined by calculating electronic circular dichroism (ECD). The cytotoxicity of some of the compounds against MCF-7, HCT-116, MDA-MB-231, and SW620 human cancer cell lines were evaluated, in which compound 4 showed negligible cytotoxic activity with an IC50 value of 68.08 ± 0.35 µM against the MCF-7 cell line.

This paper demonstrates a novel carrier-injection-type silicon based light emitting device(LED) with three terminals and high light emission intensity.The device was designed and fabricated in the commercial standard 0.5 μm CMOS process offered by Central Semiconductor Manufacturing Corporation(CSMC) without any modification.Two shallow diagonal n+p junctions were embedded on the p type substrate.One junction biased in forward mode emits infrared light,and the other is also forward biased to inject carriers into the light emitting region.Experiment results show that,at 10 mA biased current and 3 V modulation voltage,1 nW optical power can be obtained and it's approximately two orders of magnitude higher than the single junction.Due to the low operating voltage,the device can be monolithic integrated with the current mainstream silicon CMOS technology and shows a great potential in optoelectronic integration field.