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The importance of hardware security increases significantly to protect the vast amounts of private data stored on edge devices. Physical unclonable functions (PUFs) are gaining prominence as hardware security primitives due to their ability to generate true random digital keys by exploiting the inherent randomness of the physical devices. Traditional approaches, however, require significant data movement between memory units and PUF generation circuits to perform encryption, presenting considerable energy efficiency and security challenges. This study introduces an innovative approach where PUF key generation and encryption are accomplished in the same vertically integrated resistive random access memory (V-RRAM), alleviating the data movement issue. The proposed V-RRAM encryption machine offers concealable PUFs, high area efficiency, and multi-thread data handling using parallel XOR logic operations. The encryption machine is compared with other machines, demonstrating the highest spatiotemporal cost-effectiveness.

This study introduces a Ta2O5-based self-rectifying memristor (SRM) with an Al2O3interfacial layer adopted to improve switching uniformity, read voltage margin, and long-term retention. The Pt/Ta2O5/Al2O3/TiN (PTAT) device exhibits a 105rectification ratio, 104on/off ratio, 2 × 106endurance, and retention of 104s at 150 °C. A 3-layer 4 × 4 vertical resistive random access memory structure exhibits uniform switching parameters. The coefficient of variation (CV) for device-to-device measurements is 0.23 for the low resistance state (LRS) and 0.22 for the high resistance state (HRS), while for cycle-to-cycle measurements, the CV is 0.38 for the LRS and 0.11 for the HRS. Finally, the present study demonstrates the superior performance of the PTAT devices in the context of hardware-aware training for a fully connected neural network implementation. These advancements position the PTAT device as a promising candidate for high-density three-dimensional storage class memory and low-power neural networks, offering the consistent performance and reliability necessary for future high-density storage applications.