1. Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates.
- Author
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Toyota, H., Fujie, S., Haneta, M., Mikami, A., Endoh, T., Jinbo, Y., and Uchitomi, N.
- Subjects
ANTIMONY alloys ,QUANTUM wells ,OPTICAL properties ,THIN films ,MOLECULAR beam epitaxy ,SUBSTRATES (Materials science) ,SILICON ,X-ray diffraction ,PHOTOLUMINESCENCE - Abstract
Abstract: For the purpose of investigating their structural and optical properties, GaSb thin films and GaSb/AlSb multiple quantum well (MQW) structures were grown on Si(111) substrates. A GaSb/AlSb MQW structure was also grown on Si(001) substrate as a control sample. Surface morphologies and a XRD measurements of GaSb films grown on Si(111) substrates showed that the GaSb film with a 5 nm thick AlSb initiation layer has good crystal quality. Observation of the RHEED patterns of both MQWs suggests that both GaSb films are under tensile strain at growth temperature. In-plane XRD measurement of MQW on Si(111) showed that the (111) face of the GaSb film is aligned to the Si(111) surface upon rotation by 30
° . Photoluminescence (PL) spectra consisting of two peaks at 1250∼1400 nm were observed for both MQWs. [Copyright &y& Elsevier]- Published
- 2010
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