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Ultrafast optical excitation of quantum materials has opened new frontiers for transiently inducing novel phases of matter, including magnetism, charge density waves, ferroelectricity, and superconductivity beyond the constraints of equilibrium thermodynamics. Triggering a transient topological order in a trivial semiconductor represents a key milestone, as it could provide an on-demand route to topological functionality for device applications. However, achieving a topologically nontrivial phase from a large-gap (~ 1 eV) semiconductor remains a major challenge, as substantial energy modification is required to invert the band gap. Here, we report the discovery of a thermally inaccessible, transient topological crystalline order in a sizable-gap (~ 0.8 eV) layered semiconductor, SnSe, through femtosecond above-gap excitation. Time- and angle-resolved photoemission spectroscopy reveals a Dirac-like linear dispersion forming within the band gap on a subpicosecond timescale. This transient state shows hallmark features of a reflection-invariant topological crystalline insulator, including a high Fermi velocity (2.5x10^5 m/s), multiple Dirac points located away from high-symmetry momenta, and independence from probe photon energy, persisting for several picoseconds even at room temperature. Our findings establish a nonequilibrium pathway to ultrafast topological order in a semiconductor, opening new avenues for optically driven spintronic and quantum information technologies., Comment: 24 pages, 4 figures

Due to the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them quite difficult to control, and the development of novel methods to manipulate these systems with external stimuli is a fundamental goal of antiferromagnetic spintronics. In this work, we report evidence for a metastable reorientation of the order parameter in an antiferromagnetic semiconductor triggered by an ultrafast quench of the equilibrium order via photoexcitation above the band gap. The metastable state forms less than 10 ps after the excitation pulse, and persists for longer than 150 ps before decaying to the ground state via thermal fluctuations. Importantly, this transition cannot be induced thermodynamically, and requires the system to be driven out of equilibrium. Broadly speaking, this phenomenology is ultimately the result of large magnetoelastic coupling in combination with a relatively low symmetry of the magnetic ground state. Since neither of these properties are particularly uncommon in magnetic materials, the observations presented here imply a generic path toward novel device technology enabled by ultrafast dynamics in antiferromagnets., Comment: 41 pages, 27 figures

The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel $\sqrt{19}\times\sqrt{19}$ charge order in few-layer thick 1T-TaTe$_2$ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe$_2$ exhibits a variety of metastable charge density wave orders, including the $\sqrt{19}\times\sqrt{19}$ superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, we find that only the $\sqrt{19}\times\sqrt{19}$ order persists in 1T-TaTe$_2$ films thicker than a monolayer, up to 8 layers. Our findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.

Recently, superconductivity has been discovered in rock-salt structured binary lanthanum monoxide LaO through state-of-the-art oxide thin-film epitaxy. In this work, we reveal that the normal state of superconducting LaO is a $Z_2$ nontrivial topological metal, where the Dirac point protected by the crystal symmetry is located around the Fermi energy. By analysing the orbital characteristics, we show that the nature of the topological band structure of LaO originates from the intra-atomic transition from the outer shell La 5$d$ to the inner shell 4$f$ orbitals driven by the strong octahedral crystal-field. Furthermore, the appearance of novel surface states unambiguously demonstrates the topological signature of LaO superconductor. Our theoretical findings not only shed new light into the understanding of the exotic quantum behaviors in LaO superconductor with intimate correlation between 4$f$ and 5$d$ orbitals in La, but also provide an exciting platform to explore the interplay between nontrivial topology and superconductivity., Comment: 6 pages, 4 figures, 1 table