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Start Over Author "A.H. Johnston" Journal 2001 ieee international integrated reliability workshop. final report (cat. no.01th8580)
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1. Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation

Author

C.E. Weintraub, Bin Wang, Eric M. Vogel, J.R. Conley, Joseph Bernstein, John S. Suehle, and A.H. Johnston

Subjects
Materials science, Dielectric strength, Annealing (metallurgy), business.industry, Oxide, Gamma ray irradiation, Time-dependent gate oxide breakdown, chemistry.chemical_compound, chemistry, Optoelectronics, Heavy ion, Irradiation, business, Gamma irradiation
Abstract

We studied the effects of heavy ion and /spl gamma/-ray irradiation on radiation-induced leakage current (RILC) and time-dependent dielectric breakdown (TDDB) life distributions of ultra-thin oxides (

Published
2003
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