Search

Your search keyword '"Yuansha Chen"' showing total 4 results
Start Over Author "Yuansha Chen" Journal 2010 10th ieee international conference on solid-state and integrated circuit technology
4 results on '"Yuansha Chen"'

1. A compact model of resistive switching devices

Author

Bin Gao, B. Chen, Q.Y. Jun, Jinfeng Kang, Xiaozhe Liu, L. F. Liu, Zhang Fangni, R.Q. Han, Kangliang Wei, and Yuansha Chen

Subjects
Computer science, business.industry, Simple (abstract algebra), Voltage control, Resistive switching, Electronic engineering, Electrical engineering, Process control, business, Resistive random-access memory
Abstract

In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I–V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM.

Published
2010
Full Text
View/download PDF

2. On the bipolar and unipolar resistive switching characteristics in Ag/SiO2/Pt memory cells

Author

Jinfeng Kang, Lifeng Liu, Ruqi Han, Bing Chen, Yuansha Chen, Yi Wang, and Bin Gao

Subjects
Materials science, Silicon, business.industry, Electrical engineering, chemistry.chemical_element, Optical switch, Resistive random-access memory, chemistry, Memory cell, Resistive switching, Electrode, Optoelectronics, business, Voltage
Abstract

Resistive switching characteristics of Ag/SiO 2 /Pt memory cells with different set current compliance are studied. Ag/SiO 2 /Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage ( 2 /Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO 2 /Pt cells are discussed.

Published
2010
Full Text
View/download PDF

3. Pulse voltage dependent resistive switching behaviors of HfO2-based RRAM

Author

Jinfeng Kang, Xiaoyan Liu, Lifeng Liu, Yuansha Chen, Ruqi Han, Bin Gao, and Bing Chen

Subjects
Materials science, business.industry, Electrical engineering, Hafnium compounds, Pulse voltage, Resistive random-access memory, law.invention, law, Resistive switching, Optoelectronics, Process control, Voltage pulse, Resistor, business, Electronic circuit
Abstract

Voltage pulse dependent resistive switching behavior during SET process in HfO 2 -based RRAM device is investigated. When a resistor is connected in series to RRAM during the SET process, the resistance uniformity can be improved. Voltage pulse controlled resistance states were observed. This behavior may provide the new application with the new function circuits.

Published
2010
Full Text
View/download PDF

4. Remarkable improvement in switching ratio of ReRAM using In/poly-Fe2O3/Nb-SrTiO3 devices

Author

Bin Chen, Lifeng Liu, Yuansha Chen, Bin Gao, Guijun Lian, Jinfeng Kang, and Xiaoyan Liu

Subjects
Materials science, business.industry, Resistive switching, Polarity symbols, Electrical engineering, Optoelectronics, business, Temperature measurement, Retention time, Polarity (mutual inductance), Voltage, Resistive random-access memory
Abstract

Typical bipolar resistive switching behavior are observed in the In/poly-Fe 2 O 3 /Nb-SrTiO 3 (Nb-STO) devices. Rectifying I–V characteristics along with switching ratio significantly related to the polarity of read voltage have been found. A negative read voltage remarkable enhances the switching ratio to 107 comparing with 102 for the positive polarity, which demonstrates an efficient way to improve ReRAM's switching characteristic. Furthermore, the cycle-to-cycle uniformity, set&reset current, resistance distribution and retention time have been measured that exhibits good device performance for promising applications.

Published
2010
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results