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Your search keyword '"Enea Bianda"' showing total 2 results
Start Over Author "Enea Bianda" Journal 2015 17th european conference on power electronics and applications (epe'15 ecce-europe)
2 results on '"Enea Bianda"'

1. JBS power-rectifiers for 1.7kV applications with conduction properties close to pure Schottky-design

Author

Andrei Mihaila, Vinoth Sundaramoorthy, Enea Bianda, Renato Minamisawa, H. Bartolf, and Lars Knoll

Subjects
Materials science, business.industry, Schottky barrier, Electrical engineering, Optoelectronics, Schottky diode, Power semiconductor device, Thermal conduction, Blocking (statistics), business, Metal–semiconductor junction, Power (physics), Diode
Abstract

This paper discusses an elaborated study about the design of Junction-Barrier Schottky (JBS) diodes regarding the width (w) and spacing (s) of the implanted p+ pattern, utilizing epitaxial drift-layer specifications (4H-SiC) suitable for 1.7 kV applications. The impact of the w/s design-ratio on the blocking characteristics, the unipolar ON-state performance as well as moderation of surge current events are investigated. Finally, we report experimental results on successfully manufactured 1.7 kV JBS power-rectifiers demonstrating the practical validity of our numerical approach.

Published
2015

2. A feasibility study of using gate-emitter voltage method to estimate IGBT online junction temperature in practical applications

Author

Franz Zurfluh, R. Bloch, Enea Bianda, Gernot Riedel, and Vinoth Sundaramoorthy

Subjects
Materials science, business.industry, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Insulated-gate bipolar transistor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Temperature measurement, Computer Science::Hardware Architecture, Current injection technique, Logic gate, Hardware_INTEGRATEDCIRCUITS, Gate driver, Physics::Accelerator Physics, Junction temperature, business, Common emitter, Voltage
Abstract

The paper presents the feasibility of using gate-emitter voltage during IGBT turn-off in estimating the junction temperature of semiconductor chips in IGBT modules in real-time application. It is shown that the chosen parameter has negligible module and measurement circuit variation once calibrated and has been implemented successfully in a converter.

Published
2015

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