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7 pags., 4 figs., Entanglement of excitons holds great promise for the future of quantum computing, which would use individual molecular dyes as building blocks of their circuitry. Studying entangled excitonic eigenstates emerging in coupled molecular assemblies in the near-field with submolecular resolution has the potential to bring insight into the photophysics of these fascinating quantum phenomena. In contrast to far-field spectroscopies, near-field spectroscopic mapping permits direct identification of the individual eigenmodes, type of exciton coupling, including excited states otherwise inaccessible in the far field (dark states). Here we combine tip-enhanced spectromicroscopy with atomic force microscopy to inspect delocalized single-exciton states of charged molecular assemblies engineered from individual perylenetetracarboxylic dianhydride (PTCDA) molecules. Hyperspectral mapping of the eigenstates and comparison with calculated many-body optical transitions reveals a second low-lying excited state of the anion monomers and its role in the exciton entanglement within the assemblies. We demonstrate control over the exciton coupling by switching the assembly charge states. Our results reveal the possibility of tailoring excitonic properties of organic dye aggregates for advanced functionalities and establish the methodology to address them individually at the nanoscale., S.C., R.C.C.F., M.Š ., and J.D. acknowledge the Czech grant agency funding no. 20-18741S and the Charles University Grant Agency project no. 910120. P.M. thanks the ERC Synergy Program (grant no. ERC-2013- SYG-610256, Nanocosmos) for financial support and the “Comunidad de Madrid” for its support to the FotoArt-CM Project (S2018/NMT-4367) through the Program of R&D activities between research groups in Technologies 2013, cofinanced by European Structural Funds.

Semiconducting monolayers of transition-metal dichalcogenides are outstanding platforms to study both electronic and phononic interactions as well as intra- and intervalley excitons and trions. The...

Valley-dependent excitation and emission in transition metal dichalcogenides (TMDCs) have recently emerged as a new avenue for optical data manipulation, quantum optical technologies, and chiral photonics. The valley-polarized electronic states can be optically addressed through photonic spin-orbit interaction of excitonic emission, typically with plasmonic nanostructures, but their performance is limited by the low quantum yield of neutral excitons in TMDC multilayers and the large Ohmic loss of plasmonic systems. Here, we demonstrate a valleytronic system based on the trion emission in high-quantum-yield WS2 monolayers chirally coupled to a low-loss microfiber. The integrated system uses the spin properties of the waveguided modes to achieve long-range directional routing of valley excitations and also provides an approach to selectively address valley-dependent emission from different spatial locations around the microfiber. This valleytronic interface can be integrated with fiber communication devices, allowing for merging valley polarization and chiral photonics as an alternative mechanism for optical information transport and manipulation in classical and quantum regimes.

Van der Waals heterostructures composed of different two-dimensional films offer a unique platform for engineering and promoting photoelectric performances, which highly demands the understanding of photocarrier dynamics. Herein, large-scale vertically stacked heterostructures with MoS2 and ReSe2 monolayers are fabricated. Correspondingly, the carrier dynamics have been thoroughly investigated using different ultrafast spectroscopies, including Terahertz (THz) emission spectroscopy, time-resolved THz spectroscopy (TRTS), and near-infrared optical pump-probe spectroscopy (OPPS), providing complementary dynamic information for the out-of-plane charge separation and in-plane charge transport at different stages. The initial charge transfer (CT) within the first 170 fs, generating a transient directional current, is directly demonstrated by the THz emissions. Furthermore, the TRTS explicitly unveils an intermediate free-carrier relaxation pathway, featuring a pronounced augmentation of THz photoconductivity compared to the isolated ReSe2 layer, which likely contains the evolution from immigrant hot charged free carriers to bounded interlayer excitons (∼0.7 ps) and the surface defect trapping (∼13 ps). In addition, the OPPS reveals a distinct enhancement in the saturable absorption along with long-lived dynamics (∼365 ps), which originated from the CT and interlayer exciton recombination. Our work provides comprehensive insight into the photocarrier dynamics across the charge separation and will help with the development of optoelectronic devices based on ReSe2-MoS2 heterostructures.

Semiconductor copper indium sulfide quantum dots are emerging as promising alternatives to cadmium- and lead-based chalcogenides in solar cells, luminescent solar concentrators, and deep-tissue bioimaging due to their inherently lower toxicity and outstanding photoluminescence properties. However, the nature of their emission pathways remains a subject of debate. Using low-temperature single quantum dot spectroscopy on core-shell copper indium sulfide nanocrystals, we observe two subpopulations of particles with distinct spectral features. The first class shows sharp resolution-limited emission lines that are attributed to zero-phonon recombination lines of a long-lived band-edge exciton. Such emission results from the perfect passivation of the copper indium sulfide core by the zinc sulfide shell and points to an inversion in the band-edge hole levels. The second class exhibits ultrabroad spectra regardless of the temperature, which is a signature of the extrinsic self-trapping of the hole assisted by defects in imperfectly passivated quantum dots.

Antimony-based metal halide hybrids have attracted enormous attention due to the stereoactive 5s2 electron pair that drives intense triplet broadband emission. However, energy/charge transfer has been rarely achieved for Sb3+-doped materials. Herein, Sb3+ ions are homogeneously doped into 2D [NH3(CH2)4NH3]CdBr4 perovskite (Cd-PVK) using a wet-chemical method. Compared to the weak singlet exciton emission of Cd-PVK at 380 nm, 0.01% Sb3+-doped Cd-PVK exhibits intense triplet emission located at 640 nm with a near-unity quantum yield. Further increasing the doping concentration of Sb3+ completely quenches singlet exciton emission of Cd-PVK, concurrently with enhanced Sb3+ triplet emission. Delayed luminescence and femtosecond-transient absorption studies suggest that Sb3+ emission originates from exciton transfer (ET) from Cd-PVK host to Sb3+ dopant, while such ET cannot occur with Pb2+-doped Cd-PVK because of the mismatch of energy levels. In addition, density function theory calculations indicate that the introduced Sb3+ likely replace the Cd2+ ions along with the deprotonation of butanediammonium for charge balance, instead of generating Cd2+ vacancies. This work provides a deeper understanding of the ET of Sb3+-doped Cd-PVK and suggests an effective strategy to achieve efficient triplet Sb3+ emission beyond 0D Cl-based hybrids.

Colloidal CdSe quantum dots (QDs) designed with a high degree of asymmetric internal strain have recently been shown to host a number of desirable optical properties including subthermal room-temperature line widths, suppressed spectral diffusion, and high photoluminescence (PL) quantum yields. It remains an open question, however, whether they are well-suited for applications requiring emission of identical single photons. Here we measure the low-temperature PL dynamics and the polarization-resolved fluorescence line narrowing spectra from ensembles of these strained QDs. Our spectroscopy reveals the radiative recombination rates of bright and dark excitons, the relaxation rate between the two, and the energy spectra of the quantized acoustic phonons in the QDs that can contribute to relaxation processes. In comparison to conventional colloidal CdSe/ZnS core/shell QDs, we find that in asymmetrically strained CdSe QDs over six times more light is emitted directly by the bright exciton. These results are therefore encouraging for the prospects of chemically synthesized colloidal QDs as emitters of single indistinguishable photons.

Cesium-halide perovskite quantum dots (QDs) have gained tremendous interest as quantum emitters in quantum information processing applications due to their optical and photophysical properties. However, engineering excitonic states in quantum dots requires a deep knowledge of the coherent dynamics of their excitons at a single-particle level. Here, we use femtosecond time-resolved two-photon near-field scanning optical microscopy (NSOM) to reveal coherences involving a single cesium lead bromide perovskite QD (CsPbBr3) at room temperature. We show that, compared to other nonperovskite nanoparticles, the electronic coherence on a single perovskite QD has a relatively long lifetime of ca. 150 fs, whereas CdSe QDs have exciton coherence times shorter than 75 fs at room temperature. One possible explanation for the longer coherence time observed for the CsPbBr3 perovskite system is related to the exciton fine structure of these perovskite QDs compared to other nanoparticles. These perovskite QDs exhibit interesting optical properties that differ from those of the traditional QDs including bright triplet exciton states. In fact, due to the small amplitude of the energy gap fluctuations of dipole-allowed triplet states in perovskite QDs, the coherent superposition could be preserved for longer times. Furthermore, single-particle excitation approach implemented in this work allows us to remove effects of heterogeneity that are usually present in ensemble averaging experiments at room temperature. The realization of quantum-mechanical phase-coherence of a charge carrier that can operate at room temperature is an issue of great importance for the potential application of coherent electronic phenomena in electronic and optoelectronic devices. These interesting findings provide further evidence of the great potential of these perovskite QDs as candidates for quantum computing and information processing applications.

We investigate the interaction of excitons in monolayer WSe2 with the piezoelectric field of surface acoustic wave (SAW) at room temperature using photoluminescence (PL) spectroscopy and report a large in-plane exciton polarizability of 8.43 ± 0.18 × 10-6 Dm/V. Such large polarizability arises due to the strong dielectric screening from the piezoelectric substrate. In addition, we show that the exciton-piezoelectric field interaction and population distribution between neutral excitons and trions can be optically manipulated by controlling the field screening using photogenerated free carriers. Finally, we model the broadening of the exciton PL line width and report that the interaction is dominated by type-II band edge modulation, because of the in-plane electric field in the system. The results help understand the interaction of excitons in monolayer transition-metal dichalcogenides that will aid in controlled manipulation of excitonic properties for applications in sensing, detection, and on-chip communication.

The valley pseudospin at the K and K' high-symmetry points in monolayer transition metal dichalcogenides (TMDs) has potential as an optically addressable degree of freedom in next-generation optoelectronics. However, intervalley scattering and relaxation of charge carriers leads to valley depolarization and limits practical applications. In addition, enhanced Coulomb interactions lead to pronounced excitonic effects that dominate the optical response and initial valley depolarization dynamics but complicate the interpretation of ultrafast spectroscopic experiments at short time delays. Employing broadband helicity-resolved two-dimensional electronic spectroscopy (2DES), we observe ultrafast (∼10 fs) intervalley coupling between all A and B valley exciton states that results in a complete breakdown of the valley index in large-area monolayer MoS2 films. These couplings and subsequent dynamics exhibit minimal excitation fluence or temperature dependence and are robust toward changes in sample grain size and inherent strain. Our observations strongly suggest that this direct intervalley coupling on the time scale of optical excitation is an inherent property of large-area MoS2 distinct from dynamic carrier or exciton scattering, phonon-driven processes, and multiexciton effects. This ultrafast intervalley coupling poses a fundamental challenge for exciton-based valleytronics in monolayer TMDs and must be overcome to fully realize large-area valleytronic devices.

Solid-state single-photon sources are essential building blocks for quantum photonics and quantum information technologies. This study demonstrates promising single-photon emission from quantum defects generated in single-wall carbon nanotubes (SWCNTs) by covalent reaction with guanine nucleotides in their single-stranded DNA coatings. Low-temperature photoluminescence spectroscopy and photon-correlation measurements on individual guanine-functionalized SWCNTs (GF-SWCNTs) indicate that multiple, closely spaced guanine defect sites within a single ssDNA strand collectively form an exciton trapping potential that supports a localized quantum state capable of room-temperature single-photon emission. In addition, exciton traps from adjacent ssDNA strands are weakly coupled to give cross-correlations between their separate photon emissions. Theoretical modeling identifies coupling mechanism as a capture of band-edge excitons. Because the spatial pattern of nanotube functionalization sites can be readily controlled by selecting ssDNA base sequences, GF-SWCNTs should become a versatile family of quantum light emitters with engineered properties.

Transient absorption measurements were conducted on pristine and monoexciton saturated CsPbBr3 nanocrystals varying in size within the regime of a strong quantum confinement. Once the difference spectra were translated to absolute transient changes in absorption cross section, a single exciton is shown to completely bleach the band edge absorption peak and induce a new absorption roughly two times weaker ∼100 meV to the blue. Difference spectra obtained during Auger recombination of biexciton demonstrate that the addition of a second exciton, rather than double the effect of a first, bleaches the blue-induced absorption band without producing a net stimulated emission at the band edge. Accompanied by high time resolution transient absorption spectra pumping at the lowest exciton band, these results identify the blue-induced absorption as the second transition to 1Se1Sh which is shifted in energy due to unusually strong and promptly rising biexciton repulsion. Possible mechanisms giving rise to this repulsion and prospects for applying it to enhance optical gain applications of these particles are discussed.

Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we explore a simple chemical treatment that allows on-off switching of low-lying, defect-localized exciton states, leading to tunable emission properties. Using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we show that passivation of sulfur vacancy defects, which act as exciton traps in monolayer MoS2 and WS2, allows for controllable and improved mobilities and an increase in photoluminescence up to 275-fold, more than twice the value achieved by other chemical treatments. Our findings suggest a route for simple and rational defect engineering strategies for tunable and switchable electronic and excitonic properties through passivation.

Monolayer transition metal dichalcogenide (TMD) alloys have emerged as a unique material system for promising applications in electronics, optoelectronics, and spintronics due to their tunable electronic structures, effective masses of carriers, and valley polarization with various alloy compositions. Although spin-orbit engineering has been extensively studied in monolayer TMD alloys, the valley Zeeman effect in these alloys still remains largely unexplored. Here we demonstrate the enhanced valley magnetic response in Mo0.5W0.5Se2 alloy monolayers and Mo0.5W0.5Se2/WS2 heterostructures probed by magneto-photoluminescence spectroscopy. The large g factors of negatively charged excitons (trions) of Mo0.5W0.5Se2 have been extracted for both pure Mo0.5W0.5Se2 monolayers and Mo0.5W0.5Se2/WS2 heterostructures, which are attributed to the significant impact of doping-induced strong many-body Coulomb interactions on trion emissions under an out-of-plane magnetic field. Moreover, compared with the monolayer Mo0.5W0.5Se2, the slightly reduced valley Zeeman splitting in Mo0.5W0.5Se2/WS2 is a consequence of the weakened exchange interaction arising from p-doping in Mo0.5W0.5Se2via interlayer charge transfer between Mo0.5W0.5Se2 and WS2. Such interlayer charge transfer further evidences the formation of type-II band alignment, in agreement with the density functional theory calculations. Our findings give insights into the spin-valley and interlayer coupling effects in monolayer TMD alloys and their heterostructures, which are essential to develop valleytronic applications based on the emerging family of TMD alloys.

This review traces nanocrystal quantum dot (QD) research from the early discoveries to the present day and into the future. We describe the extensive body of theoretical and experimental knowledge that comprises the modern science of QDs. Indeed, the spatial confinement of electrons, holes, and excitons in nanocrystals, coupled with the ability of modern chemical synthesis to make complex designed structures, is today enabling multiple applications of QD size-tunable electronic and optical properties.

Rich valleytronics and diverse defect-induced or interlayer pre-bandgap excitonics have been extensively studied in transition metal dichalcogenides (TMDCs), a system with fascinating optical physics. However, more intense high-energy absorption peaks (∼3 eV) above the bandgaps used to be long ignored and their underlying physical origin remains to be unveiled. Here, we employ momentum resolved electron energy loss spectroscopy to measure the dispersive behaviors of the valley excitons and intense higher-energy peaks at finite momenta. Combined with accurate Bethe-Salpeter equation calculations, non-band-nesting transitions at the Q valley and at the midpoint of KM are found to be responsible for the high-energy broad absorption peaks in tungsten dichalcogenides and present spin polarizations similar to A excitons, in contrast with the band-nesting mechanism in molybdenum dichalcogenides. Our experiment-theory joint research will offer insights into the physical origins and manipulation of the intense high-energy excitons in TMDC-based optoelectronic devices.

Correlations between excitons, that is, electron-hole pairs, have a great impact on the optoelectronic properties of semiconductor quantum dots and thus are relevant for applications such as lasers and photovoltaics. Upon multiphoton excitation, these correlations lead to the formation of multiexciton states. It is challenging to observe these states spectroscopically, especially higher multiexciton states, because of their short lifetimes and nonradiative decay. Moreover, solvent contributions in experiments with coherent signal detection may complicate the analysis. Here we employ multiple-quantum two-dimensional (2D) fluorescence spectroscopy on colloidal CdSe1-xSx/ZnS alloyed core/shell quantum dots. We selectively map the electronic structure of multiexcitons and their correlations by using two- and three-quantum 2D spectroscopy, conducted in a simultaneous measurement. Our experiments reveal the characteristics of biexcitons and triexcitons such as transition dipole moments, binding energies, and correlated transition energy fluctuations. We determine the binding energies of the first six biexciton states by simulating the two-quantum 2D spectrum. By analyzing the line shape of the three-quantum 2D spectrum, we find strong correlations between biexciton and triexciton states. Our method contributes to a more comprehensive understanding of multiexcitonic species in quantum dots and other semiconductor nanostructures.

Twisted light carries a well-defined orbital angular momentum (OAM) of lℏ per photon. The quantum number l of its OAM can be arbitrarily set, making it an excellent light source to realize high-dimensional quantum entanglement and ultrawide bandwidth optical communication structures. In spite of its interesting properties, twisted light interaction with solid state materials, particularly two-dimensional materials, is yet to be extensively studied via experiments. In this work, photoluminescence (PL) spectroscopy studies of monolayer molybdenum disulfide (MoS2), a material with ultrastrong light-matter interaction due to reduced dimensionality, are carried out under photoexcitation of twisted light. It is observed that the measured spectral peak energy increases for every increment of l of the incident light. The nonlinear l-dependence of the spectral blue shifts is well accounted for by the analysis and computational simulation of this work. More excitingly, the twisted light excitation revealed the unusual lightlike exciton band dispersion of valley excitons in monolayer transition metal dichalcogenides. This linear exciton band dispersion is predicted by previous theoretical studies and evidenced via this work's experimental setup.

Unusually high exciton binding energies (BEs), as much as ∼1 eV in monolayer transition-metal dichalcogenides, provide opportunities for exploring exotic and stable excitonic many-body effects. These include many-body neutral excitons, trions, biexcitons, and defect-induced excitons at room temperature, rarely realized in bulk materials. Nevertheless, the defect-induced trions correlated with charge screening have never been observed, and the corresponding BEs remain unknown. Here we report defect-induced A-trions and B-trions in monolayer tungsten disulfide (WS2) via carrier screening engineering with photogenerated carrier modulation, external doping, and substrate scattering. Defect-induced trions strongly couple with inherent SiO2 hole traps under high photocarrier densities and become more prominent in rhenium-doped WS2. The absence of defect-induced trion peaks was confirmed using a trap-free hexagonal boron nitride substrate, regardless of power density. Moreover, many-body excitonic charge states and their BEs were compared via carrier screening engineering at room temperature. The highest BE was observed in the defect-induced A-trion state (∼214 meV), comparably higher than the trion (209 meV) and neutral exciton (174 meV), and further tuned by external photoinduced carrier density control. This investigation allows us to demonstrate defect-induced trion BE localization via spatial BE mapping in the monolayer WS2 midflake regions distinctive from the flake edges.

A moire superlattice formed by stacking two lattice mismatched transition metal dichalcogenide monolayers, functions as a diffusion barrier that affects the energy transport and dynamics of interlayer excitons (electron and hole spatially concentrated in different monolayers). In this work, we experimentally quantify the diffusion barrier experienced by interlayer excitons in hexagonal boron nitride-encapsulated molybdenum diselenide/tungsten diselenide (MoSe2/WSe2) heterostructures with different twist angles. We observe the localization of interlayer excitons at low temperature and the temperature-activated diffusivity as a function of twist angle and hence attribute it to the deep periodic potentials arising from the moire superlattice. We further support the observations with theoretical calculations, Monte Carlo simulations, and a three-level model that represents the exciton dynamics at various temperatures.

Despite the excellent optoelectronic properties of halide perovskites, the ionic and electronic defects adversely affect the stability and durability of perovskites and their devices. These defects, intrinsic or produced by environmental factors such as oxygen, moisture, or light, not only cause chemical reactions that disintegrate the structure and properties of perovskites but also induce undesired photoluminescence blinking to perovskite quantum dots and nanocrystals. Blinking is also caused by the nonradiative Auger processes in the photocharged quantum dots or nanocrystals. Herein, we find real-time suppression of halide vacancy-assisted nonradiative exciton recombination and photoluminescence blinking in MAPbBr3 and MAPbI3 perovskite quantum dots by filling the vacancies using halide precursors (MABr and MAI). Also, halide vacancy filling increases the photoluminescence quantum efficiencies and lifetimes of the quantum dots. We estimate the rates of halide vacancy-assisted nonradiative recombination at 1 × 108 s-1 for MAPbBr3 and 1.9 × 109 s-1 for MAPbI3 quantum dots. The real-time blinking suppression using the halide precursors and statistical analysis of the ON/OFF blinking time reveal that the halide vacancies contribute to the type-A blinking through charging and discharging. Conversely, the blinking of the quantum dots after halide vacancy filling is dominated by the type-B mechanism.

Ultrathin two-dimensional (2D) semiconductors exhibit outstanding properties, but it remains challenging to obtain monolayer-structured inorganic semiconductors naturally occurring as nonlayered crystals. Copper sulfides are a class of widely studied nonlayered metal chalcogenide semiconductors. Although 2D copper sulfides can provide extraordinary physical and chemical applications, investigations of 2D copper sulfides in the extreme quantum limit are constrained by the difficulty in preparing monolayered copper sulfides. Here, we report a subnanometer-thin quasi-copper-sulfide (q-CS) semiconductor formed upon self-assembly of copper(I)-dodecanethiol complexes. Extended X-ray absorption fine structure analysis revealed that the existence of Cu-Cu bonding endowed the layer-structured q-CS with semiconductor properties, such as appreciable interband photoluminescence. Theoretical studies on the band structure demonstrated that the optical properties of copper-dodecanethiol assemblies were dominated by the q-CS layer and the photoluminescence originated from exciton radiative recombination across an indirect band gap, borne out by experimental observation at higher temperatures, but with the onset of a direct emission process at cryogenic temperatures. The following studies revealed that the metal-metal bonding occurred not only in copper-alkanethiolate complex assemblies with variable alkyl chain length but also in silver-alkanethiolate and cadmium-alkanethiolate assemblies. Therefore, the current studies may herald a class of 2D semiconductors with extremely thin thickness out of nonlayered metal sulfides to bridge the gap between conventional inorganic semiconductors and organic semiconductors.

Chemical reactions between semiconducting single-wall carbon nanotubes (SWCNTs) and single-stranded DNA (ssDNA) achieve spatially patterned covalent functionalization sites and create coupled fluorescent quantum defects on the nanotube surface, tailoring SWCNT photophysics for applications such as single-photon emitters in quantum information technologies. The evaluation of relaxation dynamics of photoluminescence (PL) from those coupled quantum defects is essential for understanding the nanotube electronic structure and beneficial to the design of quantum light emitters. Here, we measured the PL decay for ssDNA-functionalized SWCNTs as a function of the guanine content of the ssDNA oligo that dictates the red-shifting of their PL emission peaks relative to the band-edge exciton. We then correlate the observed dependence of PL decay dynamics on energy red-shifts to the exciton potential energy landscape, which is modeled using first-principles approaches based upon the morphology of ssDNA-altered SWCNTs obtained by atomic force microscopy (AFM) imaging. Our simulations illustrate that the multiple guanine defects introduced within a single ssDNA strand strongly interact to create a deep exciton trapping well, acting as a single hybrid trap. The emission decay from the distinctive trapping potential landscape is found to be biexponential for ssDNA-modified SWCNTs. We attributed the fast time component of the biexponential PL decay to the redistribution of exciton population among the lowest energy bright states and a manifold of dark states emerging from the coupling of multiple guanine defects. The long lifetime component in the biexponential decay, on the other hand, is attributed to the redistribution of exciton population among different exciton trapping sites that arise from the binding of multiple ssDNA strands along the nanotube axis. AFM measurements indicate that those trapping sites are separated on average by ∼8 nm along the nanotube axis.

Understanding the unique characteristics of plexcitons, hybridized states resulting from the strong coupling between plasmons and excitons, is vital for both fundamental studies and practical applications in nano-optics. However, the research of plexcitons from the perspective of chiral optics has been rarely reported. Here, we experimentally investigate the optical chirality of plexcitonic systems consisting of composite metal nanoparticles and chiral J-aggregates in the strong coupling regime. Mode splitting and anticrossing behavior are observed in both the circular dichroism (CD) and extinction spectra of the hybrid nanosystems. A large mode splitting (at zero detuning) of up to 136 meV/214 meV in CD/extinction measurements confirms that the systems attain the strong coupling regime. This phenomenon indicates that the formation of plexcitons modifies not only the extinction but also the optical chirality of the hybrid systems. We develop a quasistatic theory to elucidate the chiral optical responses of hybrid systems. Furthermore, we propose and justify a criterion of strong plasmon-exciton interaction: the mode splitting in the CD spectra (at zero detuning) is larger than half of that in the extinction spectra. Our findings give a chiral perspective on the study of strong plasmon-exciton coupling and have potential applications in the chiral optical field.

Squeezing bubbles and impurities out of interlayer spaces by applying force through a few-layer graphene capping layer leads to van der Waals heterostructures with the ultraflat structure free from random electrostatic potential arising from charged impurities. Without the graphene capping layer, a squeezing process with an AFM tip induces applied-force-dependent charges of Δn ∼ 2 × 1012 cm-2 μN-1, resulting in the significant intensity of trions in photoluminescence spectra of MoSe2 at low temperature. We found that a hBN/MoSe2/hBN prepared with the "graphene-capping-assisted AFM nano-squeezing method" shows a strong excitonic emission with negligible trion peak, and the residual line width of the exciton peak is only 2.2 meV, which is comparable to the homogeneous limit. Furthermore, in this high-quality sample, we found that the formation of biexciton occurs even at extremely low excitation power (Φph ∼ 2.3 × 1019 cm-2 s-1) due to the enhanced collisions between excitons.

Solution-processed quantum dot (QD) lasers are one of the holy grails of nanoscience. They are not yet commercialized because the lasing threshold is too high: one needs >1 exciton per QD, which is difficult to achieve because of fast nonradiative Auger recombination. The threshold can, however, be reduced by electronic doping of the QDs, which decreases the absorption near the band-edge, such that the stimulated emission (SE) can easily outcompete absorption. Here, we show that by electrochemically doping films of CdSe/CdS/ZnS QDs, we achieve quantitative control over the gain threshold. We obtain stable and reversible doping of more than two electrons per QD. We quantify the gain threshold and the charge carrier dynamics using ultrafast spectroelectrochemistry and achieve quantitative agreement between experiments and theory, including a vanishingly low gain threshold for doubly doped QDs. Over a range of wavelengths with appreciable gain coefficients, the gain thresholds reach record-low values of ∼1 × 10-5 excitons per QD. These results demonstrate a high level of control over the gain threshold in doped QD solids, opening a new route for the creation of cheap, solution-processable, low-threshold QD lasers.

Light matter interactions are greatly enhanced in two-dimensional (2D) semiconductors because of strong excitonic effects. Many optoelectronic applications would benefit from creating stacks of atomically thin 2D semiconductors separated by insulating barrier layers, forming multiquantum-well structures. However, most 2D transition metal chalcogenide systems require serial stacking to create van der Waals multilayers. Hybrid metal organic chalcogenolates (MOChas) are self-assembling hybrid materials that combine multiquantum-well properties with scalable chemical synthesis and air stability. In this work, we use spatially resolved linear and nonlinear optical spectroscopies over a range of temperatures to study the strongly excitonic optical properties of mithrene, that is, silver benzeneselenolate, and its synthetic isostructures. We experimentally probe s-type bright excitons and p-type excitonic dark states formed in the quantum confined 2D inorganic monolayers of silver selenide with exciton binding energy up to ∼0.4 eV, matching recent theoretical predictions of the material class. We further show that mithrene's highly efficient blue photoluminescence, ultrafast exciton radiative dynamics, as well as flexible tunability of molecular structure and optical properties demonstrate great potential of MOChas for constructing optoelectronic and quantum excitonic devices.

Quantum confinements, especially quantum in narrow wells, have been investigated because of their controllability over electrical parameters. For example, quantum dots can emit a variety of photon wavelengths even for the same material depending on their particle size. More recently, the research into two-dimensional (2D) materials has shown the availability of several quantum mechanical phenomenon confined within a sheet of materials. Starting with the gapless semimetal properties of graphene, current research has begun into the excitons and their properties within 2D materials. Even for simple 2D systems, experimental results often offer surprising results, unexpected from traditional studies. We investigated a coupled quantum well system using 2D hexagonal boron nitride (hBN) barrier as well as 2D tungsten disulfide (WS2) semiconductor arranged in stacked structures to study the various 2D to 2D interactions. We determined that for hexagonal boron nitride-tungsten disulfide (hBN/WS2) quantum well stacks, the interaction between successive wells resulted in decreasing bandgap, and the effect was pronounced even over a large distance of up to four stacks. Additionally, we observed that a single layer of isolating hBN barriers significantly reduces interlayer interaction between WS2 layers, while still preserving the interwell interactions in the alternative hBN/WS2 structure. The methods we used for the study of coupled quantum wells here show a method for determining the respective exciton energy levels and trion energy levels within 2D materials and 2D materials-based structures. Renormalization energy levels are the key in understanding conductive and photonic properties of stacked 2D materials.

Poly(9,9-dioctylfluorene) (PFO) is one of the most important conjugated polymer materials, exhibiting outstanding photophysical and electrical properties. PFO is also known for a diversity of morphological phases determined by conformational states of the main chain. Our goal in this work is to address some of the key questions on formation and dynamics of one such conformation, the β-phase, by following in real time the evolution of fluorescence spectra of single PFO chains. The PFO is dispersed in a thin polystyrene film, and the spectra are monitored during the process of solvent vapor annealing with toluene. We confirm unambiguously that the PFO β-phase segments are formed on a true single-chain level at room temperature in the solvent-softened polystyrene. We further find that the formation of the β-phase is a dynamic and reversible process occurring on the order of seconds, leading to repeated spontaneous transitions between the glassy and β-phase segments during the annealing. Comparison of PFO with two largely different molecular weights (Mw) shows that chains with lower Mw form the β-phase segments much faster. For the high Mw PFO chains, a detailed Franck-Condon analysis of the β-phase spectra shows a large distribution of the Huang-Rhys factor, S, and even dynamic changes of this factor occurring on a single chain. Such dynamics are likely a manifestation of changing coherence length of the exciton. Further, for the high Mw PFO chains we observe an additional conformational state, a crystalline γ-phase. The γ-phase formation is also a spontaneous reversible process in the solvent-softened matrix. The phase can form from both the β-phase and the glassy phase, and the formation requires high Mw to enable intersegment interactions in a self-folded chain.

The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial variations in photoconductivity in MoS2-WS2 lateral multijunction heterostructures using photon energy-resolved narrowband illumination. We find that the onset of photoconductivity in individual domains corresponds to the optical absorption onset, confirming that the tightly bound excitons in transition metal dichalcogenides can nonetheless dissociate into free carriers. These photogenerated carriers are most likely n-type and are seen to persist for up to days. Informed by finite element modeling we reveal that they can increase the carrier density by up to 200 times. This persistent photoconductivity appears to be dominated by contributions from the multilayer MoS2 domains, and we attribute the flake-wide response in part to charge transfer across the heterointerface. Spatial correlation of our SMM imaging with photoluminescence (PL) mapping confirms the strong link between PL peak emission photon energy, PL intensity, and the local accumulated charge. This work reveals the spatially and temporally complex optoelectronic response of these systems and cautions that properties measured during or after illumination may not reflect the true dark state of these materials but rather a metastable charged state.

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next generation optoelectronic devices. The exciton diffusion length is a critical parameter that reflects the quality of exciton transport in monolayer TMDCs and limits the performance of many excitonic devices. Although diffusion lengths of a few hundred nanometers have been reported in the literature for as-exfoliated monolayers, these measurements are convoluted by neutral and charged excitons (trions) that coexist at room temperature due to natural background doping. Untangling the diffusion of neutral excitons and trions is paramount to understand the fundamental limits and potential of new optoelectronic device architectures made possible using TMDCs. In this work, we measure the diffusion lengths of neutral excitons and trions in monolayer MoS2 by tuning the background carrier concentration using a gate voltage and utilizing both steady state and transient spectroscopy. We observe diffusion lengths of 1.5 μm and 300 nm for neutral excitons and trions, respectively, at an optical power density of 0.6 W cm-2.

The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe$_2$/WSe$_2$ heterostructures and the emergence of the linearly polarized interlayer exciton photoluminescence. We attribute these changes to the local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for the interlayer excitons due to the strain-induced interlayer band gap reduction. The surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal the variation of the local work function consistent with the strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest novel approaches for interlayer exciton manipulation by local strain engineering.

Quasi-two-dimensional (2D) organic-inorganic hybrid perovskite is a re-emerging material with strongly excitonic absorption and emission properties that are attractive for photonics and optoelectronics. Here we report the experimental observation of excitonic energy transfer (ET) in van der Waals heterostructures consisting of quasi-2D hybrid perovskite (C6H5C2H4NH3)2PbI4 (PEPI) and monolayer WS2. Photoluminescence excitation spectroscopy reveals a distinct ground exciton resonance feature of perovskite, evidencing ET from perovskite to WS2. We find unexpectedly high photoluminescence enhancement factors of up to ∼8, which cannot be explained by single-interface ET. Our analysis reveals that interlayer ET across the bulk of the layered perovskite also contributes to the large enhancement factor. Further, from the weak temperature dependence of the lower-limit ET rate, which we found to be ∼3 ns-1, we conclude that the Forster-type mechanism is responsible.

Interlayer excitons have been extensively studied in monolayer transition metal dichalcogenide (TMD) heterobilayers mainly due to the long lifetime, which is beneficial for a wide range of optoelectronic applications. To date, the majority of investigations of interlayer excitons in TMD heterobilayers have been focusing on the geometric arrangement of structures, spin-valley lifetime, and interlayer valley excitons with interlayer hopping rules. Nevertheless, interlayer excitons in TMD heterobilayers strongly depend on the local atomic registry and coupling strength, which increase the complexity of the device fabrication. Here, we report pronounced interlayer exciton emission in two-dimensional (2D) perovskite/monolayer TMD heterostructures without the need of thermal annealing or specific geometric arrangements, and the interlayer exciton emission is rather general among 2D perovskites and monolayer TMDs. Such interlayer exciton emission completely dominates the emission spectrum at 78 K regardless of the stacking sequence, suggesting the robust interlayer coupling in 2D perovskite/monolayer TMD heterostructures. Furthermore, the interlayer exciton emission shows a large blue-shift with increasing laser intensity due to the repulsive dipole-dipole interaction and can persist above 220 K. Importantly, the interlayer exciton emission also possesses robust circular polarization in chiral 2D perovskite/monolayer WSe

openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP Monolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |χ(3)eff| tuning from (∼12.0 to 5.45) × 10-18 m2/V2. The tunability of the effective second-order optical nonlinearity |χ(2)eff| at 440 nm C-exciton resonance wavelength is also demonstrated from (∼11.6 to 7.40) × 10-9 m/V with sum-frequency generation. Such a large tunability in optical nonlinearities arises from the strong excitonic charging effect in monolayer transition-metal dichalcogenides, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.

Hybrid organic-inorganic perovskites allow the synthesis of high-quality, nanostructured semiconducting films via easily accessible solution-based techniques. This has allowed tremendous development in optoelectronic applications, primarily solar cells and light-emitting diodes. Allowed by the ease of access to nanostructure, chirality has recently been introduced in semiconducting perovskites as a promising way to obtain advanced control of charge and spin and for developing circularly polarized light sources. Circular polarization of photoluminescence (CPL) is a powerful tool to probe the electronic structure of materials. However, CPL in chiral perovskites has been scarcely investigated, and a study in bulk thin films and at room temperature is still missing. In this work, we fabricate bromine-based chiral perovskites by using a bulky chiral organic cation mixed with CsBr, resulting in Ruddlesden-Popper perovskite thin films. We measure CPL on these films at room temperature and, by using unpolarized photoexcitation, we record a degree of circular polarization of photoluminescence in the order of 10-3 and provide a full spectral characterization of CPL. Our results show that chirality is imparted on the electronic structure of the semiconductor; we hypothesize that the excess in polarization of emitted light originates from the charge in the photogenerated Wannier exciton describing an orbit in a symmetry-broken environment. Furthermore, our experiments allow the direct measurement of the magnetic dipole moment of the optical transition, which we estimate to be ≥0.1 μB. Finally, we discuss the implications of our findings on the development of chiral semiconducting perovskites as sources of circularly polarized light.

Devices operating with excitons have promising prospects for overcoming the dilemma of response time and integration in current generation of electron- or/and photon-based elements and devices. Although the intrinsic properties including edges, grain boundaries, and defects of atomically thin semiconductors have been demonstrated as a powerful tool to adjust the bandgap and exciton energy, investigating the intrinsic modulation of spatiotemporal dynamics still remains challenging on account of the short exciton diffusion length. Here, we achieve the attractive remote lightening phenomenon, in which the emission region could be far away (up to 14.6 μm) from the excitation center, by utilizing a femtosecond laser with ultrahigh peak power as excitation source and the edge region with high photoluminescence efficiency as a bright emitter. Furthermore, the ultrafast transition between exciton and trion is demonstrated, which provides insight into the intrinsic modulation on populations of exciton and trion states. The complete cascaded physical scenario of exciton spatiotemporal dynamics is eventually established. This work can refresh our perspective on the spatial nonuniformities of CVD-grown atomically thin semiconductors and provide important implications for developing durable and stable excitonic devices in the future.

Air bubbles formed between layers of two-dimensional (2D) materials not only are unavoidable but also emerge as an important means of engineering their excitonic emission properties, especially as controllable quantum light sources. Measuring the actual spatially resolved optical properties across such bubbles is important for understanding excitonic physics and for device applications; however, such a measurement is challenging due to nanoscale features involved which require spatial resolution beyond the diffraction limit. Additional complexity is the involvement of multiple physical effects such as mechanical strain and dielectric environment that are difficult to disentangle. In this paper, we demonstrate an effective approach combining micro-photoluminescence measurement, atomic force microscope profile mapping, and a theoretical strain model. We succeeded in reconstructing the actual spatial profiles of the emission wavelengths beyond the diffraction limit for bubbles formed by a monolayer tungsten disulfide on boron nitride. The agreements and consistency among various approaches established the validity of our approach. In addition, our approach allows us to disentangle the effects of strain and dielectric environment and provides a general and reliable method to determine the true magnitude of wavelength changes due to the individual effects across bubbles. Importantly, we found that micro-optical measurement underestimates the red and blue shifts by almost 5 times. Our results provide important insights into strain and screening-dependent optical properties of 2D materials on the nanometer scale and contribute significantly to our understanding of excitonic emission physics as well as potential applications of bubbles in optoelectronic devices.

F\"orster Resonant Energy Transfer (FRET)-mediated exciton diffusion through artificial nanoscale building block assemblies could be used as a new optoelectronic design element to transport energy. However, so far nanocrystal (NC) systems supported only diffusion length of 30 nm, which are too small to be useful in devices. Here, we demonstrate a FRET-mediated exciton diffusion length of 200 nm with 0.5 cm2/s diffusivity through an ordered, two-dimensional assembly of cesium lead bromide perovskite nanocrystals (PNC). Exciton diffusion was directly measured via steady-state and time-resolved photoluminescence (PL) microscopy, with physical modeling providing deeper insight into the transport process. This exceptionally efficient exciton transport is facilitated by PNCs high PL quantum yield, large absorption cross-section, and high polarizability, together with minimal energetic and geometric disorder of the assembly. This FRET-mediated exciton diffusion length matches perovskites optical absorption depth, opening the possibility to design new optoelectronic device architectures with improved performances, and providing insight into the high conversion efficiencies of PNC-based optoelectronic devices.

Lead-free halide double perovskites have emerged as a nontoxic alternative to the heavily researched lead-based halide perovskites. However, their optical properties and the initial charge carrier relaxation processes are under debate. In this study, we apply time-resolved photoluminescence and differential transmission spectroscopy to investigate the photoexcited charge carrier dynamics within the indirect band structure of Cs2AgBiBr6 nanocrystals. Interestingly, we observe a high energetic emission stemming from the direct band gap, besides the previously reported emission from the indirect band gap transition. We attribute this emission to the radiative recombination of direct bound excitons. This emission maximum redshifts nearly 1 eV within 10 ps due to electron intervalley scattering, which leads to a transfer of direct to indirect bound excitons. We conclude that these direct bound excitons possess a giant oscillator strength causing not only a pronounced absorption peak at the optical band gap energy but also luminescence to occur at the direct band gap transition in spite of the prevailing intervalley scattering process. These results expand the understanding of the optical properties and the charge carrier relaxation in double perovskites, thus, facilitating the further development of optoelectronic devices harnessing lead-free perovskites.