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Formamidinium lead triiodide (FAPbI3) perovskite without methylammonium and/or Cs cations is considered the most promising candidate for perovskite photovoltaics. However, the crystallization of photoactive α‐FAPbI3 requires high‐temperature annealing (≥150 °C) and a controlled humidity environment when methylammonium‐containing additives are absent. A methylammonium‐free ink is reported that enables low‐temperature (≤80 °C) crystallization of photoactive α‐FAPbI3 films, while also demonstrating compatibility with blade‐coating large‐area films in ambient air. The synergistical effects of methylphenyl sulfoxide and PbCl2 facilitate the formation of an intermediate phase of nanoscale‐disordered δ‐FAPbI3, which dramatically reduces the crystallization temperature of α‐FAPbI3 down to 80 °C and even below. The 80 °C crystalized α‐FAPbI3 exhibits reduced strain and improved uniformity compared to high‐temperature annealed counterparts. The synthesized ink and the corresponding intermediate precursor film are also found remarkably stable, allowing open‐air processing without the need for humidity control. Highly efficient n–i–p structured α‐FAPbI3 minimodules can be fabricated under an ambient environment RH 50% with the ink at 80 °C, achieving a power conversion efficiency of up to 22.4%. The discovery of the low‐temperature FAPbI3 ink paves a new avenue for printing perovskite solar cells and associated optoelectronic applications, accelerating the commercialization progress of perovskite materials. [ABSTRACT FROM AUTHOR]

Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) with earth‐abundant and environmental‐benign constituents has been regarded as a promising solar energy harvesting material for green and cost‐effective photovoltaic applications. The record efficiency of CZTSSe solar cells has recently been refreshed twice after years‐long stagnation, keeping it in the spotlight. Nevertheless, the champion efficiency of 13.6% is still far behind its counterpart Cu(In,Ga)Se2 (CIGS) (23.35%) despite being endowed with a similar electronic structure and nearly‐identical device architecture. In fact, CZTSSe solar cells are more susceptible to non‐radiative recombination at bulk and interfaces, which must be improved for further efficiency advancement. In this review, the state‐of‐art strategies to enhance the power conversion efficiency of CZTSSe solar cells are summarized and discussed, with focus given to three critical device regions i) kesterite absorber, ii) buffer/kesterite interface, and iii) kesterite/back contact interface. With the further elucidation of the latest progress and disclosure of fundamental mechanisms, novel insights toward high‐efficiency kesterite solar cells are proposed. [ABSTRACT FROM AUTHOR]

Earth‐abundant and air‐stable Cu2BaSnS4−xSex (CBTSSe) and related thin‐film absorbers are regarded as prospective options to meet the increasing demand for low‐cost solar cell deployment. Devices based on vacuum‐deposited CBTSSe absorbers have achieved record power conversion efficiency (PCE) of 5.2% based on a conventional device structure using CdS buffer and i‐ZnO/indium tin oxide (ITO) window layers, with open‐circuit voltage (VOC) posing the major bottleneck for improving solar cell performance. The current study demonstrates a >20% improvement in VOC (from 0.62 to 0.75 V) and corresponding enhancement in PCE (from 5.1% to 6.2% without antireflection coating; to 6.5% with MgF2 antireflection coating) for solution‐deposited CBTSSe solar cells. This performance improvement is realized by introducing an alternative successive ionic layer adsorption and reaction‐deposited Zn1−xCdxS buffer combined with sputtered Zn1−xMgxO/Al‐doped ZnO window/top contact layer, which offers lower electron affinities relative to the conventional CdS/i‐ZnO/ITO stack and better matching with the low electron affinity of CBTSSe. A combined experimental (temperature‐ and light intensity‐dependent VOC measurements) and device simulation (SCAPS‐1D) evaluation points to the importance of addressing relative band offsets for both the buffer and window layers relative to the absorber in mitigating interfacial recombination and optimizing CBTSSe solar cell performance. [ABSTRACT FROM AUTHOR]

This article, titled "Methylammonium-Free Ink for Low-Temperature Crystallization of α-FAPbI3 Perovskite," was published in the journal Advanced Energy Materials. The authors, Tian Hou, Meng Zhang, Xiaoran Sun, Yihao Wang, Kaipeng Chen, Zhipeng Fu, Mingrui He, Xu Liu, Ziheng Liu, Yuelong Huang, Martin A. Green, and Xiaojing Hao, discuss a new method for fabricating α-FAPbI3 perovskite at low temperatures without the use of methylammonium (MA). The article includes an image illustrating the phase transition from hexagonal δ-FAPbI3 to cubic α-FAPbI3, and explains how the addition of PbCl2 and MPSO helps facilitate this transition. For more details, readers are directed to the full article. [Extracted from the article]

Lithium incorporation in kesterite Cu2ZnSn(S,Se)4 (CZTSSe) materials has been experimentally proven effective in improving electronic quality for application in photovoltaic devices. Herein, a feasible and effective solution‐based lithium post‐deposition treatment (PDT), enabling further efficiency improvement on the high‐performance baseline is reported and the dominant mechanism for this improvement is proposed. In this way, lithium is uniformly incorporated into grain interiors (GIs) without segregation at grain boundaries (GBs), which can occupy the Zn sites with a high solubility in the CZTSSe matrix, producing high density of LiZn antisites with shallower acceptor levels than the intrinsic dominant defect (CuZn antisites). As a result, CZTSSe absorber with better p‐type doping is obtained, leading to a pronounced enhancement in fill factor and a corresponding gain in open‐circuit voltage and short‐circuit current and consequently a significant efficiency boost from 9.3% to 10.7%. This work provides a feasible alternative alkali‐PDT treatment for chalcogenide semiconductors and promotes a better understanding of the mechanism of Li incorporation in kesterite materials. [ABSTRACT FROM AUTHOR]

Abstract: In this research, a new route of surface passivation is reported by introducing hydrogen from the atomic layer deposited (ALD) Al2O3 layer into pure sulfide Cu2ZnSnS4 (CZTS) solar cells. Different amounts of hydrogen are incorporated into the Cu2ZnSnS4/CdS interface through controlling the thickness of the ALD‐Al2O3 layer. The device with three cycles of ALD‐Al2O3 yields the highest efficiency of 8.08% (without antireflection coating) with improved open‐circuit voltage of up to 70 mV. With closer examination on the passivation route of ALD‐Al2O3, it is revealed by the surface chemisty study that the Al2O3 can be etched away by ammonium hydroxide in the CdS buffer deposition process. Instead, the hydrogen is detected within a shallow depth from the CZTS surface, and makes a significant difference in the measured distribution of contact potential difference and device performance. This may be interpreted by the effect of hydrogen passivation of the CZTS surface by curing dangling bonds at the surface of CZTS grains. This work may provide a new direction of further improving the performance of kesterite solar cells. [ABSTRACT FROM AUTHOR]

Sulfurization with various atmosphere and postheat treatments has been reported for earth abundant kesterite Cu2ZnSnS4 (CZTS) preparation as cost-effective material for next-generation solar cells. A full understanding of the nanoscale microstructure and chemistry of CZTS/CdS interface obtained from these different fabrication routes is currently lacking, yet is critical to developing optimal processing routes for high-performance kesterite solar cells. Here, the first detailed investigation of the interfacial microstructure and chemistry of CdS/Cu2ZnSnS4 heterojunctions is presented. For CZTS obtained from sulfurization in a sulfur-only atmosphere where highly defective surfaces are present, air annealing followed by etching in the initial stage of chemical bath deposition (CBD) process can effectively eliminate interfacial defects and allow the epitaxial growth of CBD-CdS, improving the minority lifetime, open circuit voltage ( VOC), and fill factor (FF) of the devices, while blocking Cd diffusion and deteriorating short circuit current ( Jsc). For CZTS from sulfurization in a combined sulfur and SnS atmosphere where CBD-CdS can directly epitaxially grow on CZTS and Cd-diffusion is clearly observed, associated devices show the longest lifetime and the highest efficiency of 8.76%. Epitaxial growth of CdS and Cd diffusion into CZTS are found to be two crucial features minimizing interfacial recombination and achieving high-efficiency devices. This will not only enhance the understanding of the device structure and physics of kesterite based solar cells, but also provide an effective way for designing other chalcogenide heterojunction solar cells. [ABSTRACT FROM AUTHOR]

A kesterite Cu2ZnSnS4 thin film solar cell with efficiency of over 9% is obtained by utilizing Zn1–xCdxS film as a replacement to traditional CdS buffer layer. Zn1–xCdxS film can optimize the conduction band offset between Cu2ZnSnS4 absorber and buffer, forming a minor positive conduction band alignment, thereby alleviating the recombination significantly and improving the open circuit voltage and fill factor efficiently. [ABSTRACT FROM AUTHOR]