Search

Semiconductive transition metal dichalcogenides (TMDs) have been considered as next generation semiconductors, but to date most device investigations are still based on microscale exfoliation with a low yield. Wafer scale growth of TMDs has been reported but effective doping approaches remain challenging due to their atomically thick nature. This work reports the synthesis of wafer-scale continuous few-layer PtSe2 films with effective doping in a controllable manner. Chemical component analyses confirm that both n-doping and p-doping can be effectively modulated through a controlled selenization process. The electrical properties of PtSe2 films have been systematically studied by fabricating top-gated field effect transistors (FETs). The device current on/off ratio is optimized in two-layer PtSe2 FETs, and four-terminal configuration displays a reasonably high effective field effect mobility (14 and 15 cm2 V−1 s−1 for p-type and n-type FETs, respectively) with a nearly symmetric p-type and n-type performance. Temperature dependent measurement reveals that the variable range hopping is dominant at low temperatures. To further establish feasible application based on controllable doping of PtSe2, a logic inverter and vertically stacked p–n junction arrays are demonstrated. These results validate that PtSe2 is a promising candidate among the family of TMDs for future functional electronic applications.

2D semiconductors have emerged as candidates for next‐generation electronics. However, previously reported 2D transistors which typically employ the gate‐first process to fabricate a back‐gate (BG) configuration while neglecting the thorough impact on the dielectric capping layer, are severely constrained in large‐scale manufacturing and compatibility with complementary metal–oxide–semiconductor (CMOS) technology. In this study, dual‐gate (DG) field‐effect transistors have been realized based on wafer‐scale monolayer MoS2 and the gate‐last processing, which avoids the transfer process and utilizes an optimized top‐gate (TG) dielectric stack, rendering it highly compatible with CMOS technology. Subsequently, the physical mechanism of TG dielectric deposition and the corresponding controllable threshold voltage (VTH) shift is investigated. Then the fabricated TG‐devices with a large on/off ratio up to 1.7 × 109, negligible hysteresis (≈14 mV), and favorable stability. Additionally, encapsulated TG structured photodetectors have been demonstrated which exhibit photo responsivity (R) up to 9.39 × 103 A W−1 and detectivity (D*) ≈2.13 × 1013 Jones. The result paves the way for future CMOS‐compatible integration of 2D semiconductors for complex multifunctional IC applications. [ABSTRACT FROM AUTHOR]

Photoelectric synaptic devices with optical sensing capability are of great importance in simulating human vision systems. Especially realizing all‐in‐one vision neuristor on silicon based new materials and principles is being pursued. 2D van der Waals (vdW) materials have the unique advantage of arbitrary stacking on demand. Herein, a full‐vdW two‐terminal 2D ferroelectric α‐In2Se3/SnSe p–n heterojunction is proposed to construct an optoelectronic neuristor to simulate visual synaptic functions. Implementation of these simulations is attributed to the co‐modulation of the electrical polarization reconfigurable built‐in electric field caused by p–n junction and photo‐inducing ferroelectric polarization switching. These functions include ultra‐high paired‐pulse facilitation index (457%), short synaptic plasticity, long synaptic plasticity, and retina‐like optical adaptations. The high PPF is crucial for high‐precision decoding and processing of visual information. Meanwhile, the classical Pavlovian conditioned reflexes associated with associative learning are also emulated showing the ability of the device to handle complex electrical and optical inputs. This study demonstrates that two‐terminal ferroelectric p–n heterojunctions have great potential in high‐precision multifunctional optoelectronic visual synaptic devices. [ABSTRACT FROM AUTHOR]

Metal halide perovskite light‐emitting diodes (Pero‐LEDs) have gained great attention due to their promising applications in lighting and displays. However, in their conventional three‐layered sandwich structure, some undeserved carrier behaviors, such as imbalanced carrier injection, severe carrier loss, and unstable recombination zone, limit the device's performance. Herein, a four‐layered design by inserting a nickel acetate (Ni(OAc)2) interlayer between the emitter and hole‐transport layer(HTL) to manage carrier behavior and improve radiative recombination efficiency is proposed. Specifically, the Ni(OAc)2 interlayer is poorly conductive and can partially block the hole injection, making the hole‐electron injection more balanced. And the Ni(OAc)2 interlayer avoids the direct contact between the perovskite emitter and hole transporter, reducing the interfacial carrier quenching. Moreover, the Ni(OAc)2 interlayer inhibits the electron‐migrated recombination at the hole transporter interface, confining the carrier recombination zone in the emitter layer. As a result, the corresponding Pero‐LEDs achieve a maximum external quantum efficiency (EQEmax) of 24.6% with good reproducibility, showing an average EQEmax of over 20%. [ABSTRACT FROM AUTHOR]

The binding correlation between electrocatalyst and lithium polysulfides (LiPSs) determines the regulation of LiPSs' redox conversion. However, how the correlation works on the LiPSs under voltage remains obscured. In this paper, the π‐conjugated aromatic pyridyl porphyrin with nitrogen of a lone pair of electrons is introduced as electrocatalyst to accelerate redox kinetics and inhibit polysulfides shuttle. On the foundation of DFT calculation and experimental tests, it is stated that the chemical binding between pyridyl porphyrin and lithium polysulfides is beefed up under higher voltage, which facilitates the charge transfer. Moreover, the molecular dynamics (MD) simulation of the solid‐liquid model shows that the presence of pyridyl porphyrin increases the binding chances between Li+ and S62− and forms clusters rather than dissolving in electrolyte, which is good for charge transfer and polysulfides localization. By hybridizing the pyridyl porphyrin with conductive cathode matrix of carbon nanotube and graphene oxide, the as‐fabricated Li2S‐T4PP‐GO‐CNT cathode delivers a high initial discharge capacity of 996.4 mAh g−1 at 0.1 C. The as‐made batteries with good electrochemical performance therefore show potential for trouble‐shooting and commercial utilization of lithium‐sulfur batteries (LSBs) in the future. [ABSTRACT FROM AUTHOR]

Reconfigurable logic‐in‐memory device, albeit a promising hardware platform for constructing parallel computing architectures, still suffers from high power‐consumption and low area‐efficiency arising from the circuit redundancy in silicon (Si) based technical path. 2D materials are identified as potential building blocks to significantly reduce the circuit footprints with outstanding power‐efficiency, owing to their atomically thin nature and unique electronic properties. However, the present 2D logic devices are primarily based on single channel materials with homogeneous transport polarities, limiting the device reconfigurability for multi‐functional applications. Here, 2D p–n junction based dual‐gate Gaussian‐type transistors for simplified reconfigurable logic circuits are reported. All fundamental Boolean logic operators are implemented in a single device with electrically driven reconfigurability, giving rise to an ultra‐low transistor consumption down to 13% of the traditional circuits. The device is also demonstrated as a reliable image processing unit for various computing tasks (pixel processing, comparing, and ciphering) by executing the corresponding logic operations. Moreover, in situ memory of the Boolean logics is achieved by engineering the dielectric properties of the transistor without compromising its reconfigurability. These findings provide a potential approach to achieving reconfigurable logic‐in‐memory operations at the hardware level, with significant implications for the advancement of parallel computing. [ABSTRACT FROM AUTHOR]

The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have garnered significant interest in circuit applications. Researchers have developed circuits based on wafer‐level 2DM fabrication and monolithic integration in the laboratory. Numerous studies have been conducted on discrete device processes; however, circuit manufacturing is a multifaceted and methodical engineering process that demands seamless integration of multiple procedures. Notably, the optimization of crucial processes holds paramount significance in achieving expected results. This review presents the existing research on process integration of 2DM devices and circuit applications. The selection of suitable 2DMs for circuit applications is outlined, considering their excellent theoretical properties and feasible high‐quality growth processes. Drawing on highly mature semiconductor manufacturing process, while incorporating customized key processes, 2DM devices have the potential to strongly compete with, and even outperform, the conventional devices. Finally, the recent circuit applications of 2DMs are also discussed in detail. 2DM integrated circuits (2DM ICs) are now being practically applied in advanced manufacturing, transitioning from laboratory development to fabrication plant deployment. The implementation of underlying 2DM IC fabrication provides effective and unique solutions for More Moore, More than Moore, and Beyond CMOS technology routes. [ABSTRACT FROM AUTHOR]

Catalytic stability is the prerequisite for the catalyst to achieve high catalytic efficiency. This study finds a new path that Prussian Blue (PB) ultrathin nanosheet assembly material (PB‐NSa) is designed and used to reach efficient catalysis through continuous interaction with ammonium perchlorate (AP, component to be catalyzed). Based on the strong oxidation environment provided by AP, the decomposition of PB occurs in advance, the product Fe2O3 accelerates the decomposition of AP that can release a large amount of gas, then reacts on Fe2O3 and disperses it near the undecomposed AP, finally realizing continuous and efficient catalysis. The results show that under the catalysis of PB‐N, "deactivation" stage of AP thermal decomposition disappears, showing two consecutive exothermic stages, high temperature decomposition peak of AP is reduced to 341.1 °C, the reduction range is 73.1 °C. Combining kinetic calculation and TG‐IR test, it is found that PB‐NSa can keep excellent catalytic stability, which depends on its special structure and interaction with AP. This research provides a design idea for the material to achieve catalytic stability, which will greatly promote its rapid industrialization. [ABSTRACT FROM AUTHOR]

The introduction of composite components to construct heterointerfaces is an important way to improve the electrocatalytic performance of materials. However, selecting appropriate components to accelerate the elementary reaction rates of the hydrogen evolution reaction (HER) in alkaline media is still in challenge. Here, a Ni‐CeF3‐VN multi‐component material is successfully constructed, which exhibits excellent HER catalytic activity (33 mV at 10 mA cm−2). The experimental and computational results show that the Ni‐VN and Ni‐CeF3 dual heterointerfaces can effectively promote the transfer of OH− adsorption site from Ni to VN and optimize the adsorption energy of intermediate H respectively, which together accelerate the rate of the multi‐step hydrogen evolution reaction in alkaline solution and thus lead to a significantly improved HER performance compared to the pure Ni. Furthermore, the solar to hydrogen (STH) efficiency can reach 10.34%. This work provides an effective guide for the design of high‐efficiency multicomponent materials in the future. [ABSTRACT FROM AUTHOR]

Designing a semiconductor‐based heterostructure photocatalyst for achieving the efficient separation of photogenerated electron‐hole pairs is highly important for enhancing H2 releasing photocatalysis. Here, a new class of Ni1−xCoxSe2–C/ZnIn2S4 hierarchical nanocages with abundant and compact ZnIn2S4 nanosheets/Ni1−xCoxSe2C nanosheets 2D/2D hetero–interfaces, is designed and synthesized. The constructed heterostructure photocatalyst exposes rich hetero‐junctions, supplying the broad and short transfer paths for charge carriers. The close contacts of these two kinds of nanosheets induce a strong interaction between ZnIn2S4 and Ni1−xCoxSe2C, improving the separation and transfer of photo‐generated electron‐hole pairs. As a consequence, the distinctive Ni1−xCoxSe2C/ZnIn2S4 hierarchical nanocages without using additional noble‐metal cocatalysts, display remarkable H2‐relaesing photocatalytic activity with a rate of 5.10 mmol g−1 h−1 under visible light irradiation, which is 6.2 and 30 times higher than those of fresh ZnIn2S4 nanosheets and bare Ni1−xCoxSe2C nanocages, respectively. Spectroscopic characterizations and theory calculations reveal that the strong interaction between ZnIn2S4 and Ni1−xCoxSe2C 2D/2D hetero‐interfaces can powerfully promote the separation of photo‐generated charge carriers and the electrons transfer from ZnIn2S4 to Ni1−xCoxSe2C. [ABSTRACT FROM AUTHOR]

Traditional von Neumann computing architecture with separated computation and storage units has already impeded the data processing performance and energy efficiency, calling for emerging neuromorphic electronic and optical devices and systems which can mimic the human brain to shift this paradigm. Material‐level innovation has become the key component to this revolution of information technology. Chalcogenide phase‐change material (PCM) as a well‐acknowledged data‐storage medium is a promising candidate to tackle this challenge. In this review, the use of PCMs to implement artificial neurons and synapses from both the electronic and optical respects is discussed, and in particular, the structure–property physics and transition dynamics that enable such brain‐inspired and in‐memory computing applications are emphasized. Recent advances on the atomic‐level amorphous and crystalline structures, transition mechanisms, materials optimization and design, neural and synaptic devices, brain‐inspired chips, and computing systems, as well as the future opportunities of PCMs, are summarized and discussed. [ABSTRACT FROM AUTHOR]

The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies to continue the performance enhancement trend are being thoroughly investigated. Among them, the use of 2D semiconducting materials as channels in FETs has raised a lot of interest in both academia and industry. However, after 15 years of intense research on 2D materials, there remain important limitations preventing their integration in solid‐state microelectronic devices. In this work, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed. The key factors that determine the performance of FETs with 2D semiconducting channels are carefully analyzed, and some recommendations to engineer them are proposed. This report presents a pathway for the integration of 2D semiconducting materials in FETs, and therefore, it may become a useful guide for materials scientists and engineers working in this field. [ABSTRACT FROM AUTHOR]

Organic–inorganic hybrid perovskite memristors with high resistive‐switching (RS) reliability and low power consumption are crucial for high‐density storage and high‐efficiency neuromorphic computing. However, the current overshoot in the electroforming process generally induces overgrowth of conductive filaments (CFs) and degrades the RS performance. Here, a simple photo‐assisted electroforming (PAE) method to suppress the current overshoot, in which the visible light irradiation is introduced into the initial electroforming process, is proposed for the first time. As a result, a reliable memristor with reduced RS fluctuation and enhanced cycling endurance is obtained, and also, the low operating current of 0.06 mA and low powerconsumption of 0.12 mW are achieved, which are about one order of magnitude lower than those of most reported hybrid perovskite‐based memristors. Further experimental evidence indicates that light irradiation plays dual roles: 1) the light‐induced lowering of iodide migration barrier leads to a significant reduction of overshoot current and forming voltage; 2) the enhanced local photoconductivity of the perovskite film shares the overshoot current through the CFs. Both factors limit the total quantity of vacancy defects generated in the electroforming process, thus preventing undesirable overgrowth of the CFs. The present PAE strategy has promise for developing high‐performance memristors. [ABSTRACT FROM AUTHOR]

The recently proposed semi‐floating gate memory technology shows the potential to balance conflicts between writing speed and data storage. Although the introduction of the p–n junction greatly improves device writing speed, the inevitable junction leakage limits the further extension of data retention time. A local nonvolatile electric field is introduced by exploiting the polarization of ferroelectric gate dielectric HfZrO4 to modulate the charge leakage speed of the p–n junction since the carrier density of 2D materials can be efficiently regulated. The refresh time is greatly prolonged more than 535%, solving the bottleneck problem of relatively short retention time of previous semi‐floating gate memory. In addition, the characteristics of device under low operation voltage is also explored, which can serve for further power reducing. This design realizes the combination of ultrafast writing operation and significant enhanced data retention ability, which provides a new idea of the development for high speed non‐volatile memory technology. [ABSTRACT FROM AUTHOR]

Abstract: Memristors as electronic artificial synapses have attracted increasing attention in neuromorphic computing. Emulation of both “learning” and “forgetting” processes requires a bidirectional progressive adjustment of memristor conductance, which is a challenge for cutting‐edge artificial intelligence. In this work, a memristor device with a structure of Ag/Zr0.5Hf0.5O2:graphene oxide quantum dots/Ag is presented with the feature of bidirectional progressive conductance tuning. The conductance of proposed memristor is adjusted through voltage pulse number, amplitude, and width. A series of voltage pulses with an amplitude of 0.6 V and a width of 30 ns is enough to modulate conductance. The impacts of pulses with different parameters on conductance modulation are investigated, and the potential relationship between pulse amplitude and energy is revealed. Furthermore, it is proved that the pulse with low energy can realize the almost linear conductance regulation, which is beneficial to improve the accuracy of pattern recognition. The bidirectional progressive conduction modulation mimics various plastic synapses, such as spike‐timing‐dependent plasticity and paired‐pulse facilitation. This progressive conduction tuning mechanism might be attributed to the coexistence of tunneling effect and extrinsic electrochemical metallization effect. This work provides one way for memristor to attain attractive features such as bidirectional tuning, low‐power consumption, and fast speed switching that is in urgent demand for further evolution of neuromorphic chips. [ABSTRACT FROM AUTHOR]

Abstract: 2D materials are extensively studied as candidates for chemical sensors due to their large surface‐to‐volume‐ratio and the low working temperature. However, the performance of 2D material‐based sensors is limited when detecting ammonia, due to the weak binding between ammonia molecules and channel materials. Previous reports show sensitivity in the ppb range upon NO2 exposure, and in ppm levels of ammonia under the same conditions. Compared with the traditional SnS2 sensors, the demonstrated suspended devices with light excitation exhibit a higher sensitivity, a faster response, and recovery rate. At room temperature, the devices show obvious response to NH3 vapor at a concentration as low as 20 ppb. High selectivity to ammonia over many other chemical gases is observed. Such arresting features originate from the suspended structure enhancing reaction area and the light excitation inducing increased charge density that facilitates the ammonia detection. The enhanced sensing performance demonstrates the superiority of the suspended structure with light assistance, and this method can be applied to other 2D material‐based sensors on optimizing their performance. [ABSTRACT FROM AUTHOR]

Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of ReS2 field-effect transistors is reported via the encapsulation of ReS2 nanosheets in a high- κ Al2O3 dielectric environment. Low-temperature transport measurements allow to observe a direct metal-to-insulator transition originating from strong electron-electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate-tunable photoresponsivity up to 16.14 A W−1 and external quantum efficiency reaching 3168%, showing a competitive device performance to those reported in graphene, MoSe2, GaS, and GaSe-based photodetectors. This study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics. [ABSTRACT FROM AUTHOR]

Field Effect Transistors: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (Adv. Funct. Keywords: 2D; field effect transistors; MoS2; reliability; transition metal dichalcogenide EN 2D field effect transistors MoS2 reliability transition metal dichalcogenide 1 1 1 05/06/20 20200504 NES 200504 In article number 1901971, Mario Lanza and co-workers review the main challenges and potential solutions towards the fabrication of field effect transistors with 2D semiconducting channels. 2D, field effect transistors, MoS2, reliability, transition metal dichalcogenide. [Extracted from the article]

Organic-Inorganic Perovskite Memristors: Photoassisted Electroforming Method for Reliable Low-Power Organic-Inorganic Perovskite Memristors (Adv. Funct. Keywords: CH3NH3PbI3; current overshoot; electroforming; memristors; photoirradiation EN CH3NH3PbI3 current overshoot electroforming memristors photoirradiation 1 1 1 04/29/20 20200427 NES 200427 In article number 1910151, Haiyang Xu, Peng Zhou, Yichun Liu, and co-workers propose a photo-assisted electroforming strategy in organic-inorganic hybrid perovskite memristors. CH3NH3PbI3, current overshoot, electroforming, memristors, photoirradiation. [Extracted from the article]

Noble Metal Dichalcogenides: A Noble Metal Dichalcogenide for High-Performance Field-Effect Transistors and Broadband Photodetectors (Adv. Funct. Keywords: broadband photodetection; field-effect transistors; mobility; on-off ratio; PtS2 Broadband photodetection, field-effect transistors, mobility, on-off ratio, PtS2. [Extracted from the article]

2D layered materials are an emerging class of low‐dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high‐performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow‐bandgap noble metal dichalcogenide (PtS2) is demonstrated in this study. The few‐layer PtS2 field‐effect transistor exhibits excellent electronic mobility exceeding 62.5 cm2 V−1 s−1 and ultrahigh on/off ratio over 106 at room temperature. The temperature‐dependent conductance and mobility of few‐layer PtS2 transistors show a direct metal‐to‐insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS2 photodetectors with broadband photodetection from visible to mid‐infrared and a fast photoresponse time of 175 µs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble‐metal dichalcogenides to be applied in high‐performance electronic and mid‐infrared optoelectronic devices. [ABSTRACT FROM AUTHOR]

Photogating detectors based on 2D materials attract significant research interests. However, most of these photodetectors are only sensitive to the incident intensities and lack the ability to distinguish different wavelengths. Color imaging based on these detectors usually requires additional optical filter arrays to collect red, green, and blue (RGB) colors in different photodetectors to restore the true color of one pixel. In this study, an MoS2/HfO2/silicon‐on‐insulator field effect phototransistor with wavelength distinguishing ability is presented, where the photogating effect can be simultaneously formed in the top MoS2 gate and bottom Si substrate gate. These two individual photogating effects can reduce and increase the read current in the middle 12 nm Si channel, respectively. Thus, by tuning the applied voltages on these two gates, the device can be used to obtain tunable ambipolar photoresponsivity from +7000 A W−1 (Si bottom gate dominated) to 0 A W−1 (balanced), and finally to −8000 A W−1 (MoS2 gate dominated). In addition, the experimental results show that the corresponding top gate voltage to the zero responsivity (0 A W−1) point can be positively shifted by the increasing of incident wavelength with high resolution up to 2 nm and is insensitive to the incident intensity. [ABSTRACT FROM AUTHOR]

Semiconductive transition metal dichalcogenides (TMDs) have been considered as next generation semiconductors, but to date most device investigations are still based on microscale exfoliation with a low yield. Wafer scale growth of TMDs has been reported but effective doping approaches remain challenging due to their atomically thick nature. This work reports the synthesis of wafer‐scale continuous few‐layer PtSe2 films with effective doping in a controllable manner. Chemical component analyses confirm that both n‐doping and p‐doping can be effectively modulated through a controlled selenization process. The electrical properties of PtSe2 films have been systematically studied by fabricating top‐gated field effect transistors (FETs). The device current on/off ratio is optimized in two‐layer PtSe2 FETs, and four‐terminal configuration displays a reasonably high effective field effect mobility (14 and 15 cm2 V−1 s−1 for p‐type and n‐type FETs, respectively) with a nearly symmetric p‐type and n‐type performance. Temperature dependent measurement reveals that the variable range hopping is dominant at low temperatures. To further establish feasible application based on controllable doping of PtSe2, a logic inverter and vertically stacked p–n junction arrays are demonstrated. These results validate that PtSe2 is a promising candidate among the family of TMDs for future functional electronic applications. An improved method for the synthesis of wafer‐scale continuous PtSe2 films with an effective doping strategy in a controllable manner is developed. Nearly symmetric n‐type and p‐type field‐effect transistors have been fabricated, based on which logic inverter and vertically stacked p–n junction arrays are successfully demonstrated in wafer scale, which enable potential applications in future 2D material circuits. [ABSTRACT FROM AUTHOR]

Due to the development of 2D material transistors research and preparation process, many fundamental logic units, like inverter and NAND gate, have been achieved to promote large‐scale integration. However, there are critical challenges like voltage loss and large dynamic power consumption for integrated circuits based on 2D semiconductors. Here high‐performance logic devices via different MoS2‐WSe2 configurations, a MoS2‐WSe2 complementary logic transmission gate with the ability to transport electrical level without any voltage loss and a MoS2‐WSe2 complementary logic inverter with small dynamic power consumption and maximum voltage gain of 18 are demonstrated. Furthermore, an essential logic unit like Schmidt flip‐flop is put forward by combining MoS2‐WSe2 inverter and graphene floating gate. The realization of various logics achieved by different MoS2‐WSe2 configurations makes it much easier to fabricate multifunctional system on a chip, which has a significant meaning for the development of high density integrated circuits. Different complementary logic via configurable MoS2/WSe2 gate is demonstrated here, a MoS2‐WSe2 transmission gate with the ability to transport electrical level without any voltage loss and a MoS2‐WSe2 inverter with small dynamic power consumption. And on this basis, a new logic unit like the Schmidt flip‐flop is put forward, which can be applied to waveform transformation and pulse shaping. [ABSTRACT FROM AUTHOR]