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We calculate the influence of the surface processing on the SAW velocity based on the perturbation theory for LiNbO3 crystal with surface diffused by Ti. The calculation results show that: the SAW velocity change depends on the depth of Ti‐diffused layer. The velocity of SAW propagating along the Ti‐diffusion layer increase with the depth of Ti‐diffused layer increasing. The detail results, discussions, and comparison between the experimental and the calculation results are presented in this article.

A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.