1. Solid-Vapor Reaction Growth of Transition-Metal Dichalcogenide Monolayers.
- Author
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Li, Bo, Gong, Yongji, Hu, Zhili, Brunetto, Gustavo, Yang, Yingchao, Ye, Gonglan, Zhang, Zhuhua, Lei, Sidong, Jin, Zehua, Bianco, Elisabeth, Zhang, Xiang, Wang, Weipeng, Lou, Jun, Galvão, Douglas S., Tang, Ming, Yakobson, Boris I., Vajtai, Robert, and Ajayan, Pulickel M.
- Subjects
CHEMICAL vapor deposition ,SEMICONDUCTORS ,STOICHIOMETRY ,NANOPARTICLES ,NANOSTRUCTURED materials - Abstract
Two-dimensional (2D) layered semiconducting transition-metal dichalcogenides (TMDCs) are promising candidates for next-generation ultrathin, flexible, and transparent electronics. Chemical vapor deposition (CVD) is a promising method for their controllable, scalable synthesis but the growth mechanism is poorly understood. Herein, we present systematic studies to understand the CVD growth mechanism of monolayer MoSe
2 , showing reaction pathways for growth from solid and vapor precursors. Examination of metastable nanoparticles deposited on the substrate during growth shows intermediate growth stages and conversion of non-stoichiometric nanoparticles into stoichiometric 2D MoSe2 monolayers. The growth steps involve the evaporation and reduction of MoO3 solid precursors to sub-oxides and stepwise reactions with Se vapor to finally form MoSe2 . The experimental results and proposed model were corroborated by ab initio Car-Parrinello molecular dynamics studies. [ABSTRACT FROM AUTHOR]- Published
- 2016
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