1. Ferroelectric properties of gradient doped Y2O3:HfO2 thin films grown by pulsed laser deposition.
- Author
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Shao, Qianqian, Wang, Xudong, Jiang, Wei, Chen, Yan, Zhang, Xiaoyu, Tu, Luqi, Lin, Tie, Shen, Hong, Meng, Xiangjian, Liu, Aiyun, and Wang, Jianlu
- Subjects
PULSED laser deposition ,THIN films ,FERROELECTRIC thin films ,NANOFILMS ,FERROELECTRIC materials ,SCANNING transmission electron microscopy - Abstract
A HfO
2 -based thin film is a nanoscale ferroelectric material with a high-k dielectric and CMOS compatibility, which make it a promising candidate for high-performance electronics. Here, we demonstrate the synthesis of a ferroelectric Y-doped HfO2 (HYO) thin film by pulsed laser deposition. This HYO thin film is gradient doped by alternately depositing a HfO2 ceramic target and a Y2 O3 ceramic target. In the films, the orthorhombic phase, ferroelectric phase, is proved by grazing incidence x-ray diffraction and scanning transmission electron microscopy measurements. Moreover, the HYO thin film embraces outstanding ferroelectric and dielectric properties, its remanent polarization is up to 10.5 μC/cm2 , and the dielectric constant is 27. The 180° inversion of the domain can be observed in a piezoelectric power microscopy image, while the phase contrast of the write domain fades with time. Therefore, this work provides a reliable approach to obtain a ferroelectric HYO thin film, which enables great potential in future high-performance nanoelectronics. [ABSTRACT FROM AUTHOR]- Published
- 2019
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