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Although perovskite solar cells (PSCs) based on SnO2 have reached a power conversion efficiency (PCE) over 25%, large-scale fabrication remains the main obstacle to the commercialization of PSCs. Therefore, considering the process compatibility, low-temperature processing and large-area fabrication technologies have received widespread attention as those are ideal for upscaling of single and tandem devices. Herein, we demonstrated an effective atomic layer deposition (ALD) process by using H2O2 as an oxygen source and the deposition temperatures can be lowered up to 50 °C due to the high activity of H2O2. The low temperature deposition enables conformal coverage of the substrate and results in a pinhole-free film with high optical transmittance, excellent electron extraction properties, and large area uniformity. Notably, a high PCE of 20.70% is achieved for single junction PSCs based on ALD-SnO2 (50 °C). When the ALD-SnO2 applied to p-i-n structure perovskite/silicon heterojunction tandem solar cell, an efficiency of 26.67% was obtained. The results demonstrate the potential of the low-temperature ALD processed metal oxide for large-scale manufacturing of optoelectronic devices with competitive performances.

Currently, chemical vapor deposition (CVD) has attracted widespread attention for preparing high efficiency and large-scale perovskite solar cells (PSCs). The surface morphology and crystallinity of precursor lead iodide (PbI2) films play a critical role in the subsequent CVD process. Here, we use a self-formed PbI2-dimethyl sulfoxide adduct in precursor PbI2 for fabricating a high quality perovskite film. The results show that a larger grain size and excessive PbI2 in the perovskite film effectively suppress carrier recombination, which is helpful to improve the device stability and efficiency. It is noted that the device maintained an excellent stability with almost the same efficiency after 1000 h (in a dry N2 glovebox, 25 °C). Finally, the PSC by using the CVD method exhibits a high power conversion efficiency of 17.9% with a bandgap of 1.60 eV, an open voltage (VOC) of 1140 mV, a short-circuit current density (JSC) of 20.1 mA/cm2, and a fill factor of 78%. This method provides guidance for preparing large-area solar cells or applications in tandem solar cells.

A hysteresis loop of minority carrier lifetime vs voltage is found in polystyrenesulfonate (PSS)/Si organic-inorganic hybrid heterojunctions, implying an interfacial memory effect. Capacitance-voltage and conductance-voltage hysteresis loops are observed and reveal a memory window. A switchable interface state, which can be controlled by charge transfer based on an electrochemical oxidation/deoxidation process, is suggested to be responsible for this hysteresis effect. We perform first-principle total-energy calculations on the influence of external electric fields and electrons or holes, which are injected into interface states on the adsorption energy of PSS on Si. It is demonstrated that the dependence of the interface adsorption energy difference on the electric field is the origin of this two-state switching. These results offer a concept of organic-inorganic hybrid interface memory being optically or electrically readable, low-cost, and compatible with the flexible organic electronics.

Light-induced degradation has been identified to be a critical issue for most silicon-based solar cell technologies. This study presents an observation of an opposite light-induced enhancement (LIE) effect in photovoltaic performance in poly(3,4-ethylthiophene):polystyrenesulfonate/n-Si organic-inorganic hybrid solar cells. The reduced density of interface states under light soaking (LS) is found to be responsible for the LIE of the hybrid solar cells. An increased minor carrier lifetime under LS and a switchable photoluminescence intensity while applying a voltage bias are observed, providing evidence for the underlying physical mechanism.

In this work, a magnesium (Mg) thin film with a low work function is introduced to obtain a downward energy band at the rear surface of a hybrid solar cell to achieve the function of a back surface field (BSF) similar to the conventional n-n+ high-low junction, i.e., favouring the majority carrier transport and suppressing minority carrier recombination. The open circuit voltages (Voc) of the hybrid solar cells with the Mg BSF layer achieve a clear improvement over those containing only the conventional metal electrode (e.g., Ag), resulting in an increase in the power conversion efficiency (PCE) of the hybrid solar cells from 9.2% to 12.3%. The Suns-Voc measurement determined using a Sinton tool gives Voc as a function of light intensity and shows that Voc increases linearly with the light intensity for the solar cell with the Mg BSF but increases first and then stabilises for the cells without the Mg BSF. This result is attributed to a difference in back surface recombination, further confirming the effi...

The use of polystyrenesulfonate (PSS) thin films in a high-quality passivation scheme involving the suppression of minority carrier recombination at the silicon surface is presented. PSS has been used as a dispersant for aqueous poly-3,4-ethylenedioxythiophene. In this work, PSS is coated as a form of thin film on a Si surface. A millisecond level minority carrier lifetime on a high resistivity Si wafer is obtained. The film thickness, oxygen content, and relative humidity are found to be important factors affecting the passivation quality. While applied to low resistivity silicon wafers, which are widely used for photovoltaic cell fabrication, this scheme yields relatively shorter lifetime, for example, 2.40 ms on n-type and 2.05 ms on p-type wafers with a resistivity of 1–5 Ω·cm. However, these lifetimes are still high enough to obtain high implied open circuit voltages (Voc) of 708 mV and 697 mV for n-type and p-type wafers, respectively. The formation of oxides at the PSS/Si interface is suggested to ...

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.