1. Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p–i–n and n–i–p solar cells
- Author
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Deng, J., Pearce, J., Koval, R, Vlahos, V., Collins, R., Wronski, C, Wronski, R., Pennsylvania State University (Penn State), Penn State System, and Michigan Technological University (MTU)
- Subjects
010302 applied physics ,Amorphous silicon ,Amorphous semiconductors ,Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Crystallographic defect ,[SPI.MAT]Engineering Sciences [physics]/Materials ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,chemistry.chemical_compound ,chemistry ,Current voltage ,0103 physical sciences ,0210 nano-technology ,Recombination - Abstract
Forward bias current‐voltage characteristics ( JD ‐V) were studied for both p ‐i ‐n ~superstrate! and n ‐i ‐p ~substrate! (a-SiC:H p)/(a-Si:H i) solar-cell structures having different p/i interface layers and different thickness i-layers. Contributions of the p/i interfaces to the J D ‐V characteristics were separated, and the dependence on the thickness of the i-layers was established. Equivalence was observed in a comparison of the characteristics of p ‐i ‐n and n ‐i ‐p cells. The various JD ‐V characteristics are found to be consistent with uniform densities of defects in the i-layers, and thus inconsistent with the spatially varying large densities of defects predicted for solar-cell structures by the defect pool model. © 2003 American Institute of Physics. @DOI: 10.1063/1.1571985#
- Published
- 2003