1. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy.
- Author
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Tseng, H. Y., Yang, W. C., Lee, P. Y., Lin, C. W., Kai-Yuan Cheng, Hsieh, K. C., Cheng, K. Y., and Hsu, C.-H.
- Subjects
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SCHOTTKY barrier diodes , *ELECTRIC properties of single crystals , *ALUMINUM alloying , *TRANSMISSION electron microscopy , *X-ray diffraction , *PIEZOELECTRIC materials - Abstract
GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasmaassisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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