1. Junction characteristics of SrTiO3 or BaTiO3 on p-Si (100) heterostructures.
- Author
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Hunter, D., Lord, K., Williams, T. M., Zhang, K., Pradhan, A. K., Sahu, D. R., and Huang, J.-L.
- Subjects
HETEROSTRUCTURES ,SILICON ,STRONTIUM compounds ,BARIUM compounds ,SEMICONDUCTOR junctions ,PULSED laser deposition - Abstract
The authors report the fabrication of p-n junctions, consisting of n-type SrTiO
3 or BaTiO3 and p-type Si substrates, by the pulsed-laser deposition technique. The BaTiO3 /Si junction exhibits excellent rectifying behavior and significantly reduced leakage current at 300 K exceeding breakdown voltage of -25 V with leakage current <0.5 μA, while SrTiO3 /Si with an interfacial layer shows moderate junction characteristics. It was demonstrated that the BaTiO3 /Si grown at an optimum growth temperature of 650 °C displayed superior performance which is promising for electronic devices. Both junctions show photocurrent at 300 K due to electron injection following the photoexcitation of n-type perovskite. [ABSTRACT FROM AUTHOR]- Published
- 2006
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