1. Short channel device performance of amorphous InGaZnO thin film transistor.
- Author
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Sanghun Jeon, Benayad, Anass, Seung-Eon Ahn, Sungho Park, Ihun Song, Changjung Kim, and U-In Chung
- Subjects
- *
THIN film transistors , *INDIUM alloys , *GALLIUM alloys , *CHEMICAL structure , *DIELECTRICS - Abstract
Short channel device performance of deep-submicron gate length oxide thin film transistor (TFT) with amorphous InGaZnO (a-IGZO) active semiconductor is presented. Remarkable electrical properties of short channel oxide TFT were achieved utilizing crucial structure and material optimization such as self aligned gate structure with homo junction, multi-channel with rounded corners, and high-Îș gate dielectric. It was found that various device performance parameters of short channel-oxide TFTs were significantly influenced by materials, processes, and structural geometry, which should be more carefully designed. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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