1. 1.55 μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs.
- Author
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Han, Q., Yang, X. H., Niu, Z. C., Ni, H. Q., Xu, Y. Q., Zhang, S. Y., Du, Y., Peng, L. H., Zhao, H., Tong, C. Z., Wu, R. H., and Wang, Q. M.
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GALLIUM arsenide , *DETECTORS , *RESONANCE , *MOLECULAR beam epitaxy , *QUANTUM wells , *CRYSTAL growth - Abstract
We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 μm. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 μm, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3×10-7 A/cm2 at a bias of 0 V and 4.3×10-5 A/cm2 at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps. [ABSTRACT FROM AUTHOR]
- Published
- 2005
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