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The authors report the fabrication of p-n junctions, consisting of n-type SrTiO3 or BaTiO3 and p-type Si substrates, by the pulsed-laser deposition technique. The BaTiO3/Si junction exhibits excellent rectifying behavior and significantly reduced leakage current at 300 K exceeding breakdown voltage of -25 V with leakage current <0.5 μA, while SrTiO3/Si with an interfacial layer shows moderate junction characteristics. It was demonstrated that the BaTiO3/Si grown at an optimum growth temperature of 650 °C displayed superior performance which is promising for electronic devices. Both junctions show photocurrent at 300 K due to electron injection following the photoexcitation of n-type perovskite. [ABSTRACT FROM AUTHOR]

We report transport, magnetization, and transmission-electron-microscopic studies of La[sub 1-x]Ba[sub x]MnO[sub 3]/SrTiO[sub 3] thin films grown by pulsed-laser deposition. The metal–insulator transition is remarkably sharp, and the high value of the temperature coefficient of resistivity is significantly relevant for the required value for the infrared imaging applications. We have demonstrated that the strain-induced property can be tuned and stabilized in La[sub 1-x]Ba[sub x]MnO[sub 3] films simply by changing the doping level (La/Ba ratio) and addition of metal ions (Ag) for applications at desirable temperature regime close to room temperature. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]