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This paper presents an integrated measuring system combining a diamond anvil cell (DAC) and a high overtone bulk acoustic resonator (HBAR) operating at the microwave frequency band as 2.8–8.8 GHz. We have studied several metallic (W, Zr) and semiconductor (Si) samples under pressure up to ∼16 GPa. As an HBAR, we have used the “Al/Al0.72Sc0.28N/Mo/(100) diamond” structure utilizing a piezoelectric aluminum–scandium nitride film. We have observed that under pressure, the Q-factor of the HBAR decreases but remains at the value of 2500–3000, which is suitable for our experiments. It is demonstrated that the above system can be used for studying the behavior of various solids under high pressure, the pressure-induced phase transition in Zr, the registration of plastic deformations, and their relaxation in metals. Here, we discussed the phenomenon of an acoustic wave passing through a tungsten layer under a pressure of ∼5.5 GPa. The integrated DAC&HBAR measuring system has demonstrated some practical advantages over known ultrasonic systems combined with the DAC as the possibility of applying a microwave operational frequency, the measurement of a Q-factor change under pressure, and the miniature size of a sensitive HBAR element. The application of the built-in DAC&HBAR system will hopefully allow more accurate studies on materials in the GPa pressure range of a DAC.

We have obtained an excitation of longitudinal bulk acoustic waves in a diamond-based High overtone Bulk Acoustic Resonator (HBAR) at microwave and enhanced frequency bands as EHF up to 40 GHz. As an effective piezoelectric transducer, an aluminum-scandium nitride film is employed. The frequency response of acoustic overtones excited in the HBARs with a different aperture in the 1.0 up to 40 GHz range is measured. Some peculiarities of HBAR's frequency response concerned with the thin film piezoelectric transducer are studied. It is established that the maximal magnitude of the quality factor varies near the value of about 10 000 within all the frequency bands investigated. The approximately frequency-independent Q-factor behavior can explain in terms the Landau–Rumer approximation describing the acoustic attenuation in a diamond. An estimation of the HBAR's quality parameter as Q × f ≈ 4 × 1014 Hz at 40 GHz is obtained. In our opinion, that value exceeds all known data among the given devices. The results obtained will be helpful in the development of microwave and EHF acoustic resonators as well as highly sensitive acoustic sensors. The development of the EHF band opens up the possibility of obtaining acoustic waves of submicrometer and nanometer scales (in various media) and implementing acoustic studies of micro- and nanoobjects.

Moire diamanes (Dnθ) based on bigraphenes (BGθ) with a layer rotation angle (θ) of about 30° are considered by ab initio methods. The adsorption of hydrogens or fluorines on the bigraphene surface leads to the formation of interlayer covalent bonds. The resulting structure has only sp3-hybridized atoms, which leads to the appearance of a wide bandgap. Bandgaps of hydrogenated Dn29.4 and Dn27.8 and fluorinated F-Dn29.4 and F-Dn27.8 are 3.6, 3.3, 4.1, and 4.5 eV, respectively, which are larger than the dielectric gaps of ordinary diamanes based on the non-twisted AA- or AB-bigraphenes (≈3 eV). Possible applications of these 2D wide-gap dielectrics were also discussed.

Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structure of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.

The magnetic state of the FeMnP0.75Si0.25 alloy was investigated by first principles calculations. The coexistence of ferromagnetic and antiferromagnetic phases in FeMnP0.75Si0.25 with the same hexagonal crystal structure was revealed. It was found that kinetic arrest during the transition from the high temperature disordered paramagnetic phase to the low temperature ordered ferromagnetic phase results in the intermediate metastable and partially disordered antiferromagnetic phase. We propose that the ratio of the ferromagnetic and antiferromagnetic phases in the FeMnP0.75Si0.25 sample can be tuned by adjusting the kinetic process of atomic diffusion. The investigations suggest that careful control of the kinetic diffusion process provides another tuning parameter to design candidate magnetocaloric materials.

We report a theoretical investigation of the impact of asymmetry in the geometry of graphene nanoribbons (GNR) on the current-voltage characteristics caused by introducing the structural defects using ab initio methods. Only the most possible structural defects were considered: mono vacancy, Stone-Wales (SW) defect with different orientation, and partial hydrogen passivation on the GNR surface. It is found that in case of SW defects the value of current is four times higher at the negative voltage than in case of structures with mono vacancy defect. Also, the impact of orientation of the SW defect on the I-V characteristics was studied.

First, the Al/AlN/Al/Cr/diamond single crystal piezoelectric layered structure has been developed, and its properties have been investigated up to 8 GHz. The peculiarities associated with the influence of piezoelectric film on the Q factor of high overtones of substrate have been pointed out. High Q ∼ 104 has been found at 6–7 GHz band.