1. Effect of polarity on Ni/InN interfacial reactions
- Author
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Suzanne E. Mohney, Katherine C. Kragh-Buetow, E. D. Readinger, Michael Wraback, and X. Weng
- Subjects
Physics and Astronomy (miscellaneous) ,Annealing (metallurgy) ,Chemistry ,business.industry ,Wide-bandgap semiconductor ,chemistry.chemical_element ,Chemical kinetics ,Crystallography ,Nickel ,Semiconductor ,Transmission electron microscopy ,X-ray crystallography ,Thin film ,business - Abstract
Ni films on (0001) and (0001¯) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.
- Published
- 2013