Search

Time-resolved laser-pump X-ray-photoemission-probe spectroscopy of a ZnO (101 ⎯ ⎯ 0 \ud 101¯0\ud ) substrate with and without PbS quantum dots (QDs) chemically linked to the surface is performed, using laser photon energies resonant with and below the band gap energy of the substrate (λ = 372 and 640 nm, hν = 3.33 and 1.94 eV). Charge injection from the photoexcited QDs to ZnO is demonstrated through the change in the surface photovoltage of the ZnO substrate observed when the heterojunction is illuminated with 1.94 eV radiation. The measured carrier dynamics are limited by the persistent photoconductivity of ZnO, giving dark carrier lifetimes of the order of 200 μs in a depletion layer at the interface. The chemical specificity of soft X-rays is used to separately measure the charge dynamics in the quantum dots and the substrate, yielding evidence that the depletion region at the interface extends into the PbS QD layer.

Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10 K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2 nm to 8 nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.