25 results on '"Fujiwara, Y."'
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2. Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities
3. Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals
4. Room temperature WGM resonances in the red spectral range from Ho3+ activated ZnO micro-spherical cavities
5. Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals.
6. Room temperature WGM resonances in the red spectral range from Ho3+ activated ZnO micro-spherical cavities.
7. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode
8. Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels
9. Colossal magnetoresistive (La,Pr,Ca)MnO3 nanobox array structures constructed by the three-dimensional nanotemplate pulsed laser deposition technique
10. Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center
11. Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
12. Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy
13. Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy
14. Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy
15. Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy
16. Atomic-scale observation of interfacial roughness and As–P exchange in InGaAs/InP multiple quantum wells
17. Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy
18. White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy
19. Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy
20. Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center.
21. Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy.
22. Depth resolution improvement in secondary ion mass spectrometry analysis using metal cluster complex ion bombardment.
23. Epitaxial growth of 3C-SiC on Si by low-pressure chemical vapor deposition.
24. Observation of local lattice distortion induced by In doping in GaAs.
25. Erratum: “Atomic-scale observation of interfacial roughness and As–P exchange in InGaAs/InP multiple quantum wells” [Appl. Phys. Lett. 84, 4436 (2004)].
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