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We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices, the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers. [ABSTRACT FROM AUTHOR]

Slow time-dependent fluctuations, or noise, in the electrical resistance of dc magnetron sputtered thin films of nickel-titanium shape memory alloys have been measured. Even in equilibrium, the noise was several orders of magnitude larger than that in simple diffusive metallic films and was found to be nonmonotonic around the martensitic transformation regime. The results are discussed in terms of the dynamics of structural defects, which also lay the foundation to a new noise-based characterization scheme of martensite transformation. [ABSTRACT FROM AUTHOR]

Studies the dc transport properties and the low-frequency conductivity noise in films of charge-ordered rare earth manganate Nd[sub 0.5]Ca[sub 0.5]MnO[sub 3] grown on silicon substrate. Revelation of the existence of a threshold field in the charge-ordered regime.

We present temperature dependent I-V measurements of short channel MoS2 field effect devices at high source-drain bias. We find that, although the I-V characteristics are ohmic at low bias, the conduction becomes space charge limited at high VDS, and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage (Vc) was also determined. The density of trap states was quantitatively calculated from Vc. The possible origin of exponential trap distribution in these devices is also discussed. [ABSTRACT FROM AUTHOR]

Graphene (Gr)–transition metal dichalcogenide (TMDC) hybrids are promising platforms for achieving sensitive and ultra-fast photodetection. The process of photo-detection in such van der Waals hybrids is usually dictated by the formation of excitons followed by the transfer of charge and energy from the TMDC layer to graphene, but they have not been explored simultaneously in the same device before. In this work, we have investigated optically excited Gr–WS2 (tungsten disulfide) heterostructures using both standard electrical transport and Johnson noise thermometry. At large negative gate voltages, the experimentally observed photoresponse cannot be explained from conventional photogating but was found to host an increase in electron temperature as large as ∼ 4 K. Time dependence of the transport and the noise reveals that the change in temperature and photoresistance can originate from distinct microscopic processes. The findings can be exploited for the development of Gr–TMDC based ultra-fast bolometers. [ABSTRACT FROM AUTHOR]

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1-0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation. [ABSTRACT FROM AUTHOR]

We have investigated the time-dependent fluctuations in electrical resistance, or noise, in high-quality crystalline magnetic nanowires within nanoporous templates. The noise increases exponentially with increasing temperature and magnetic field, and has been analyzed in terms of domain wall depinning within the Neel–Brown framework. The frequency-dependence of noise also indicates a crossover from nondiffusive kinetics to long-range diffusion at higher temperatures, as well as a strong collective depinning, which need to be considered when implementing these nanowires in magnetoelectronic devices. [ABSTRACT FROM AUTHOR]

We experimentally demonstrate that low-frequency electrical noise in silver nanowires is heavily suppressed when the crystal structure of the nanowires is hexagonal closed pack (hcp) rather than face centered cubic (fcc). Using a low-potential electrochemical method we have grown single crystalline silver nanowires with hcp crystal structure, in which the noise at room temperature is two to six orders of magnitude lower than that in the conventional fcc nanowires of the same diameter. We suggest that motion of dislocations is probably the primary source of electrical noise in metallic nanowires, which is strongly diminished in hcp crystals. [ABSTRACT FROM AUTHOR]

We report a detailed study on low-frequency 1/f -noise in large-area molecular-beam epitaxy grown thin (~10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within the bulk valence band, the temperature dependence reveals a clear signature of generation-recombination noise in the defect states in the bulk band gap. However, when the Fermi energy is tuned to the bulk band gap, the gate voltage dependence of noise shows that the resistance fluctuations in surface transport are caused by correlated mobility-number density fluctuations due to the activated defect states present in the bulk of the topological insulator crystal with a density of Dit =3:2× 1017 cm-2 eV-1. In the presence of the magnetic field, noise in these materials follows a parabolic dependence, which is qualitatively similar to mobility and charge-density fluctuation noise in non-degenerately doped trivial semiconductors. Our studies reveal that even in thin films of (Bi,Sb)2Te3 with thickness as low as 10 nm, the internal bulk defects are the dominant source of noise. [ABSTRACT FROM AUTHOR]

We report detailed temperature and gate-voltage dependence of 1/f resistance noise in magnetically doped topological insulators (TI) Crx(Bi,Sb)2–xTe3. The noise is remarkably sensitive to the gate voltage, increasing rapidly as the chemical potential is moved towards the charge neutrality point. Unlike in identically prepared (Bi,Sb)2Te3 films, where mobility-fluctuations in the surface states is the dominant mechanism, the noise in the magnetic Crx(Bi,Sb)2–xTe3 originates from transport in the localized band tail of the bulk valence band. A strong increase in noise with decreasing temperature supports this scenario. At higher temperature (≥10 K), we observed large noise peaks at gate voltage-dependent characteristic temperature scales. In line with similar observations in other nonmagnetic TI systems, we attribute these peaks to generation-recombination in the Cr-impurity band. [ABSTRACT FROM AUTHOR]

We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Fermi energy of the system can be tuned independently. Well defined commensurability features in magnetoresistance as well as magnetothermopower are observed. We show that the thermopower can be used to efficiently map out the potential landscape of the ADL. [ABSTRACT FROM AUTHOR]