1. Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch.
- Author
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Ohno, Takeo, Hasegawa, Tsuyoshi, Nayak, Alpana, Tsuruoka, Tohru, Gimzewski, James K., and Aono, Masakazu
- Subjects
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SHORT-term memory , *METAL oxide semiconductors , *ELECTRONIC equipment , *SCANNING tunneling microscopy , *SILVER sulfide - Abstract
Memorization caused by the change in conductance in a Ag2S gap-type atomic switch was investigated as a function of the amplitude and width of input voltage pulses (Vin). The conductance changed little for the first few Vin, but the information of the input was stored as a redistribution of Ag-ions in the Ag2S, indicating the formation of sensory memory. After a certain number of Vin, the conductance increased abruptly followed by a gradual decrease, indicating the formation of short-term memory (STM). We found that the probability of STM formation depends strongly on the amplitude and width of Vin, which resembles the learning behavior of the human brain. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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