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Your search keyword '"Jammy, R."' showing total 9 results
Start Over Author "Jammy, R." Journal applied physics letters
9 results on '"Jammy, R."'

3. Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Author

Kirsch, P. D., primary, Sivasubramani, P., additional, Huang, J., additional, Young, C. D., additional, Quevedo-Lopez, M. A., additional, Wen, H. C., additional, Alshareef, H., additional, Choi, K., additional, Park, C. S., additional, Freeman, K., additional, Hussain, M. M., additional, Bersuker, G., additional, Harris, H. R., additional, Majhi, P., additional, Choi, R., additional, Lysaght, P., additional, Lee, B. H., additional, Tseng, H.-H., additional, Jammy, R., additional, Böscke, T. S., additional, Lichtenwalner, D. J., additional, Jur, J. S., additional, and Kingon, A. I., additional

Published
2008
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7. Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications.

Author

Park, S. D., Park, C., Gilmer, D. C., Park, H. K., Kang, C. Y., Lim, K. Y., Burham, C., Barnett, J., Kirsch, P. D., Tseng, H. H., Jammy, R., and Yeom, G. Y.

Subjects
INTERFACES (Physical sciences), METAL insulator semiconductors, ZIRCONIUM oxide, SEMICONDUCTORS, ELECTRIC capacity, CAPACITANCE meters, ENERGY storage
Abstract

Quadratic voltage coefficient of capacitance (VCC) for ZrO2–SiO2 multilayered dielectric metal-insulator-metal capacitors depends strongly on the stacking sequence of the layered dielectrics. The quadratic VCC of an optimized SiO2/ZrO2/SiO2 stack and ZrO2/SiO2/ZrO2 stack were +42 and -1094 ppm/V2, respectively, despite the same total SiO2 and ZrO2 dielectric thickness in the stack. The observed difference in quadratic VCC depending on dielectric stacking sequence is explained by taking into account both the interface and bulk dielectric responses to the applied voltage. [ABSTRACT FROM AUTHOR]

Published
2009
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8. Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices.

Author

Govindarajan, S., Böscke, T. S., Sivasubramani, P., Kirsch, P. D., Lee, B. H., Tseng, H.-H., Jammy, R., Schröder, U., Ramanathan, S., and Gnade, B. E.

Subjects
RARE earth metals, HAFNIUM oxide, SEMICONDUCTOR doping, METAL insulator semiconductors, CAPACITORS
Abstract

Rare earth (RE) doping (Gd, Er, Dy) of HfO2 reduces leakage current by three orders of magnitude compared with pure HfO2. The key to reducing HfO2 leakage current and equivalent oxide thickness (EOT) is stabilization of the higher permittivity tetragonal phase. RE doping of 10–20 at. % stabilizes tetragonal HfO2 and increases permittivity. The maximum permittivity achieved for HfREOx is 28. The maximum permittivity for ZrREO is 32. HfGdO metal-insulator-semiconductor capacitors with EOT=1.93 nm and leakage current <1×10-8 A/cm2 after 1070 °C have been demonstrated. [ABSTRACT FROM AUTHOR]

Published
2007
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9. Composition dependence of the work function of Ta1-xAlxNy metal gates.

Author

Alshareef, H. N., Choi, K., Wen, H. C., Luan, H., Harris, H., Senzaki, Y., Majhi, P., Lee, B. H., Jammy, R., Aguirre-Tostado, S., Gnade, B. E., and Wallace, R. M.

Subjects
DIELECTRICS, SILICA, METAL oxide semiconductors, CAPACITORS, PHYSICAL vapor deposition, CHEMICAL reactions
Abstract

It is shown that the work function of Ta1-xAlxNy depends on the electrode and gate dielectric compositions. Specifically, the work function of Ta1-xAlxNy increased with SiO2 content in the gate dielectric, reaching as high as 5.0 eV on SiO2; the work function was nearly 400 mV smaller on HfO2. In addition, the work function decreased with increasing nitrogen content in the Ta1-xAlxNy metal gate. Increasing Al concentration increased the work function up to about 15% Al, but the work function decreased for higher Al concentrations. Chemical analysis shows that Al–O bonding at the interface correlates with the observed work function values. [ABSTRACT FROM AUTHOR]

Published
2006
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