19 results on '"Misra, P."'
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2. Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications
3. Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition
4. Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition
5. Effects of electron interference on temperature dependent transport properties of two dimensional electron gas at MgZnO/ZnO interfaces
6. Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition
7. Synchrotron based photoemission study on the band alignment and interface at ZnO/GaP hetero-junction
8. Temperature dependence of diffusion length, lifetime and minority electron mobility in GaInP
9. Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness
10. Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
11. Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition.
12. Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition.
13. Response to “Comment on ‘Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition’” [Appl. Phys. Lett. 101, 256101 (2012)]
14. Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy
15. Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition.
16. Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition
17. Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO2 substrates
18. Dynamic polarization filtering in anisotropically strained M-plane GaN films
19. Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO2 substrates.
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