1. Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions
- Author
-
Kyoungah Cho, Hyungon Oh, and Sangsig Kim
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,business.industry ,Bent molecular geometry ,Bend radius ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Stress (mechanics) ,chemistry ,Gate oxide ,Thin-film transistor ,0103 physical sciences ,Ultimate tensile strength ,Electrode ,Optoelectronics ,0210 nano-technology ,business - Abstract
In this study, we investigate the influence of an overlap between the gate and source/drain regions of a-Si:H thin film transistors (TFTs) on their electrical characteristics under tensile or compressive strain through experiment and mechanical simulation. The strain distribution in the a-Si:H TFT for a bending radius of 2 mm reveals that the strain at both ends of the TFT is ten times larger than that at the source-drain current path. The overlap lowers the stress sustained by the TFT in the region comprised between the channel and the gate insulator; therefore, TFTs with the overlap operate even at a tensile strain of 2.54%. In particular, the overlap is remarkably effective on relaxing the stress sustained in the interface between the gate insulator and the gate electrode, consequently improving the electrical stability of the bent TFT.
- Published
- 2017