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Your search keyword '"Schneider, M."' showing total 26 results
Start Over Author "Schneider, M." Journal applied physics letters
26 results on '"Schneider, M."'

2. Optimized continuum x-ray emission from laser-generated plasma

Author

Krygier, A., primary, Kemp, G. E., additional, Coppari, F., additional, Thorn, D. B., additional, Bradley, D., additional, Do, A., additional, Eggert, J. H., additional, Hsing, W., additional, Khan, S. F., additional, Krauland, C., additional, Landen, O. L., additional, MacDonald, M. J., additional, McNaney, J. M., additional, Park, H.-S., additional, Remington, B. A., additional, Rubery, M., additional, Schneider, M. B., additional, Sio, H., additional, and Ping, Y., additional

Published
2020
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21. Finite coplanar waveguide width effects in pulsed inductive microwave magnetometry.

Author

Schneider, M. L., Kos, A. B., and Silva, T. J.

Subjects
*MICROWAVES, *MAGNETIC films, *FERROMAGNETIC materials, *ANISOTROPY, *MAGNETIZATION, *PHYSICS
Abstract

The effect of finite coplanar waveguide (CPW) width on the measurement of the resonance frequency in thin ferromagnetic films has been characterized for pulsed inductive microwave magnetometry. A shift in resonant frequency is a linear function of the ratio of sample thickness to CPW width. The proportionality constant is experimentally determined to be 0.74±0.1 times the saturation magnetization of the film. The frequency shift may be modeled as arising from an effective magnetic-anisotropy field. [ABSTRACT FROM AUTHOR]

Published
2004
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22. Electron affinity of Al[sub x]Ga[sub 1-x]N(0001) surfaces.

Author

Grabowski, S. P., Schneider, M., Nienhaus, H., Mo¨nch, W., Dimitrov, R., Ambacher, O., and Stutzmann, M.

Subjects
*SEMICONDUCTORS, *ALUMINUM, *GALLIUM, *PHOTOEMISSION, *ULTRAVIOLET spectrometry, *ELECTRONICS
Abstract

The electronic properties and the electron affinities of Al[sub x]Ga[sub 1-x]N(0001) surfaces were investigated by ultraviolet photoemission spectroscopy (UPS) over the whole composition range. The samples were prepared by N-ion sputtering and annealing. Surface cleanliness and stoichiometry were monitored with x-ray photoemission spectroscopy. Samples with high aluminum content showed traces of oxygen which could not be removed by further cleaning cycles. However, we have evidence that the oxygen is located in the bulk and not at the surface. From the UP spectra the ionization energies and electron affinities as a function of composition x were determined. A decrease in electron affinity with increasing aluminum content was found, but the electron affinity remains positive for all x. Thus, earlier predictions of negative electron affinity for high aluminum content were not confirmed. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2001
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26. GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing.

Author

Pe´pin, A., Vieu, C., Schneider, M., Planel, R., Bloch, J., Assayag, G. Ben, Launois, H., Marzin, J. Y., and Nissim, Y.

Subjects
MIXING, HETEROSTRUCTURES, QUANTUM wells
Abstract

We demonstrate that selective intermixing of GaAs/AlGaAs quantum well heterostructures induced by SiO2 capping and subsequent annealing can be spatially localized on a length scale compatible with the lateral confinement of carriers into quantum wires. Low temperature optical spectroscopy measurements including linear polarization anisotropy analysis show evidence of the formation of one-dimensional subbands. A mechanism involving the ability of the thermal stress field generated in the heterostructure by the patterned SiO2 film to pilot the diffusion of the excess Ga vacancies, which are responsible for the enhanced interdiffusion under SiO2 is suggested to account for the high lateral selectivity achievable with this novel process. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1996
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