27 results on '"Tadjer, Marko J."'
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2. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
3. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
4. Experimental determination of critical thickness limitations of (010)β -(AlxGa1−x)2O3 heteroepitaxial films
5. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
6. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
7. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
8. Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3
9. A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
10. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility.
11. Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3.
12. Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry
13. Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
14. Structural transition and recovery of Ge implanted β-Ga2O3
15. Integration of polycrystalline Ga2O3 on diamond for thermal management
16. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
17. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3
18. Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
19. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen.
20. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
21. Electrical characterization of ALD HfO2 high-k dielectrics on (201) β-Ga2O3.
22. Electrical characterization of ALD HfO2 high-k dielectrics on (201) β-Ga2O3.
23. Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition.
24. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition.
25. On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC
26. Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC
27. Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3.
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