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Cubic phase yttrium-doped HfO2 (YDH) ultrathin films were grown on Si (111) substrates by molecular beam epitaxy. Thorough structural and morphological investigations by x-ray scattering and transmission electron microscopy reveal that the YDH thin films are epitaxially grown on the Si substrates with (111)YDH∥(111)Si and [101]YDH∥[110]Si. The interface between YDH and Si is atomistic sharp and free of interfacial layer. We have also determined the yttrium content of YDH films to be 19% by using anomalous x-ray diffraction (AXD) across Y k edge and angle resolved x-ray photoelectron spectroscopy (AR-XPS). The agreement between the AXD and AR-XPS results manifests that the incorporated Y atoms homogeneously substitute Hf atoms in the crystalline lattice and form a substitutional solid solution. [ABSTRACT FROM AUTHOR]

The electronic and atomic structures of quasi-one-dimensional blue bronze K0.3MoO3 were investigated by polarization-dependent O K-edge x-ray absorption near-edge structure (XANES) and Mo K-edge extended x-ray absorption fine structure (EXAFS) measurements at various temperature and applied voltages. The O K-edge XANES spectra suggest that the number of unoccupied O 2p–Mo 4d hybridized states increases and decreases with temperature, respectively, below and above a critical temperature of 180 K. The along b-axis electric current measurements show a threshold applied voltage, beyond which the current increases rapidly. The Mo K-edge EXAFS measurements show that the Mo–O bond lengths are insensitive to the temperature even beyond 180 K. [ABSTRACT FROM AUTHOR]

In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm-2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The electronic and atomic structures of quasi-one-dimensional blue bronze K0.3MoO3 were investigated by polarization-dependent O K-edge x-ray absorption near-edge structure (XANES) and Mo K-edge extended x-ray absorption fine structure (EXAFS) measurements at various temperature and applied voltages. The O K-edge XANES spectra suggest that the number of unoccupied O 2p–Mo 4d hybridized states increases and decreases with temperature, respectively, below and above a critical temperature of 180 K. The along b-axis electric current measurements show a threshold applied voltage, beyond which the current increases rapidly. The Mo K-edge EXAFS measurements show that the Mo–O bond lengths are insensitive to the temperature even beyond 180 K. [ABSTRACT FROM AUTHOR]