Search

Your search keyword '"Tseng, Zong-Liang"' showing total 4 results
Start Over Author "Tseng, Zong-Liang" Journal applied physics letters
4 results on '"Tseng, Zong-Liang"'

4. Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types.

Author

Lin, Chun-Cheng, Tseng, Zong-Liang, Lo, Kuang-Yao, Huang, Chih-Yu, Hong, Cheng-Shong, Chu, Sheng-Yuan, Chang, Chia-Chiang, and Wu, Chin-Jyi

Subjects
*FIELD-effect transistors, *NONVOLATILE random-access memory, *SEMICONDUCTOR doping, *RADIO frequency, *MAGNETRON sputtering
Abstract

The unipolar resistive switching behavior of Pt/LixZn1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio reaches 108 due to the minimized leakage current in the high-resistance state (HRS) at 6 at. % Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in LixZn1-xO films decreases with increasing Li content. [ABSTRACT FROM AUTHOR]

Published
2012
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results