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Mn and Cr-doped In2O3 films with Sn codoping were deposited on sapphire substrate by pulsed laser deposition. The ferromagnetism of Mn-doped In2O3 films shows reversible behavior, which can be switched between “on” and “off” states by controlling the carrier density via varying Sn concentration. The enhanced ferromagnetism in Cr-doped In2O3 films is observed due to the significant increase in the carrier density with Sn doping, and the saturation magnetization can reach 2.10 μB/Cr. Most importantly, both of the experiment results reveal that the carrier density and the net spin are two crucial factors for producing and tuning ferromagnetism. [ABSTRACT FROM AUTHOR]

Room temperature ferromagnetism was observed in n-type Fe-doped In2O3 thin films deposited on c-cut sapphire substrates by pulsed laser deposition. Structure, magnetism, composition, and transport studies indicated that Fe occupied the In sites of the In2O3 lattice rather than formed any metallic Fe or other magnetic impurity phases. Magnetic moments of films were proved to be intrinsic and showed to have a strong dependence on the carrier densities, which depended on the Fe concentration and its valence state as well as oxygen pressure. [ABSTRACT FROM AUTHOR]