1. Role of carrier and spin in tuning ferromagnetism in Mn and Cr-doped In2O3 thin films
- Author
-
Xiaohong Xu, Xiao-Chen Fan, Hai-Shun Wu, Feng-Xian Jiang, Gillian A. Gehring, and Jun Zhang
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Doping ,chemistry.chemical_element ,Manganese ,Magnetic semiconductor ,Pulsed laser deposition ,Magnetization ,Nuclear magnetic resonance ,Ferromagnetism ,chemistry ,Thin film ,Tin - Abstract
Mn and Cr-doped In2O3 films with Sn codoping were deposited on sapphire substrate by pulsed laser deposition. The ferromagnetism of Mn-doped In2O3 films shows reversible behavior, which can be switched between “on” and “off” states by controlling the carrier density via varying Sn concentration. The enhanced ferromagnetism in Cr-doped In2O3 films is observed due to the significant increase in the carrier density with Sn doping, and the saturation magnetization can reach 2.10 μB/Cr. Most importantly, both of the experiment results reveal that the carrier density and the net spin are two crucial factors for producing and tuning ferromagnetism.
- Published
- 2010