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Control and utilization of hysteresis in nanodevices is an important issue. In this paper, we show an enormous hysteresis in zinc-doped In2O3 nanowire field-effect transistors. Various measurements including changing the operating atmosphere, ozone treatment, and surface passivation were performed to understand and control the hysteresis. The hysteresis could be readily controlled by modifying the nanowire surface. Utilizing the hysteresis, the as-fabricated devices can function as nonvolatile memory elements with high charge storage stability exceeding 4 h. We propose that chemical species such as water molecules adsorbed on the devices and surface oxygen defects in the amorphous layer mainly originated from Zn2+ substitution of In3+ are the main causes of the large hysteresis and the nonvolatile memory effect. [ABSTRACT FROM AUTHOR]

We demonstrated that ternary HfAlO2 amorphous film prepared with common co-sputtering technology can be a suitable gate dielectric for bilayer MoTe2 transistors. The film quality can be improved by optimizing the sputtering process and post-annealing treatment, which is superior to its binary Al2O3 and HfO2 components and satisfies gate dielectric criteria. The bilayer MoTe2 transistors with ∼29-nm-thick HfAlO2 gate dielectric exhibit an Ion/Ioff ratio of over 108 by a low operating voltage, together with a small subthreshold swing ≈ 71.22 mV/dec. These promising characteristics favor the development of high-performance and low-power ultrathin MoTe2-based beyond-silicon electronics. [ABSTRACT FROM AUTHOR]

We demonstrated that the carrier polarity of MoTe2 transistors can be modulated by controlling the channel thickness with NiTe2 semimetal contacts. The multilayer MoTe2 transistors (thickness >7.1 nm) exhibit a symmetric ambipolar conduction, and a transition to unipolar p-type polarity occurs as the channel thickness decreased down to ∼2.3 nm. The position of the semimetal NiTe2 work function was verified to be located at the mid-gap of multilayer MoTe2, and the observed transition was interpreted by a synergistic effect of the channel thickness-dependent band alignment and charge transfer behavior with unique NiTe2 semimetal contacts. [ABSTRACT FROM AUTHOR]

Field-free room-temperature modulating magnetic domain structures and realizing stable nanoscale magnetic bubbles in 2D van der Waals (vdW) intrinsic ferromagnets are fundamentally important for 2D spintronic devices. However, it is still very challenging for the absence of a proper room-temperature 2D vdW ferromagnet with suitable perpendicular magnetic anisotropy. Here, by using a 2D vdW intrinsic room-temperature ferromagnetic Fe3GaTe2 crystal with Curie temperature of over ∼340 K and large perpendicular magnetic anisotropy, we study field-free thickness-dependent magnetic domain structure evolution in Au-capped 2D Fe3GaTe2 nanosheets by magnetic force microscopy at room temperature. The magnetic domain varies from a labyrinth-like stripe domain to a single domain in Au/Fe3GaTe2 (20/x nm) with decreasing Fe3GaTe2 thickness from 129 to 17.8 nm. Importantly, the field-free, spontaneous, stable, nanoscale magnetic bubbles can be realized in Au/Fe3GaTe2 (8/x nm) with a wide range of Fe3GaTe2 thickness over 30 nm. The highest bubble density and smallest diameter are measured as ∼2.65 μm−1 and ∼130 nm, respectively, superior to that of most room-temperature magnetic bubble materials. This work paves the way for field-free, room-temperature magnetic domain modulation and vdW-integrated spintronic applications of 2D vdW crystals. [ABSTRACT FROM AUTHOR]

We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor deposition method. A thin transition layer (∼4 nm) mainly composed of polycrystalline germanium at the MoTe2/Ge interface was verified during the Ge flake growth. The MoTe2/Ge heterojunction-based photodetector exhibits both the response speed with a rise/fall time of 7/4 μs and the photoresponsivity and detectivity with 4.87 A W−1 and 5.02 × 1011 Jones under zero bias in the near-infrared regime, respectively. The characteristics of device performance imply its practical applicability as building block for potential near-infrared integrated photonics. [ABSTRACT FROM AUTHOR]

We demonstrated that Schottky barrier height (SBH) at the metal/CVD-grown MoTe2 interface can be significantly reduced with tunnel contact by inserting a thin Al2O3 layer regardless of the metal work function. The existence of strong Fermi level pinning (FLP) at the metal/MoTe2 interface was verified, while depinning cannot be achieved with Al2O3 insertion. Thus, the fixed charges inside the Al2O3 were proposed to be responsible for the effective SBH reduction in virtue of the eliminated SBH reduction after the post-annealing treatment. This work provides a feasible way to solve the contact issue and favors for the fabrication of high performance MoTe2-based electronic devices. [ABSTRACT FROM AUTHOR]

We report the fabrication of high performance MoTe2/Si heterojunction photodiodes by direct growth of MoTe2 patterns on a commercial Si substrate by a feasible chemical vapor deposition method. The devices exhibit an ultrafast response speed with a rise/fall time of 5/8 μs, a broadband (400–1550 nm) photoresponse, a high on/off ratio of ∼104, and self-powered photo-detection with a zero bias responsivity of 0.26 A W−1 and a detectivity of 2 × 1013 Jones at 700 nm wavelength. The devices further show high stability in air for one month. This investigation offers the feasibility to fabricate high performance MoTe2/Si photodiodes for future vital optoelectronic applications. [ABSTRACT FROM AUTHOR]